Untitled
Abstract: No abstract text available
Text: VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR NO. EA-020-130521 RN5RG SERIES OUTLINE The RN5RG Series are CMOS-based voltage regulator ICs with an external power transistor with high output voltage accuracy and lowest supply current. Each of these voltage regulator ICs consists of a voltage reference
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EA-020-130521
OT-23-5
Room403,
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10F-1,
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Untitled
Abstract: No abstract text available
Text: RN5RF Series LDO with External Tr. The RN5RF Series are CMOS-based LDO regulators with external power transistor. By using an external PNP transistor, a low dropout voltage regulator ranging from several tens of mA to several hundreds mA can be configured. Use a low saturation type PNP
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100mA,
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Untitled
Abstract: No abstract text available
Text: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state
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R5527K
EA-312-130122
1612-4D
Room403,
Room109,
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R1152N
Abstract: No abstract text available
Text: R1152N Series 18V Input LDO with External Tr. The R1152N Series are CMOS-based LDO regulators with external power transistor. By using an external PNP transistor, a low dropout voltage regulator ranging from several tens of mA to several hundreds mA can be configured. Use a low saturation type PNP
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R1152N
Room403,
Room109,
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Untitled
Abstract: No abstract text available
Text: RN5RF Series 10V Input LDO with External Tr. The RN5RF Series are CMOS-based LDO regulators with external power transistor. By using an external PNP transistor, a low dropout voltage regulator ranging from several tens of mA to several hundreds mA can be configured. Use a low saturation type PNP
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100mA,
Room403,
Room109,
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Untitled
Abstract: No abstract text available
Text: RN5RF Series 10V Input LDO with External Tr. The RN5RF Series are CMOS-based LDO regulators with external power transistor. By using an external PNP transistor, a low dropout voltage regulator ranging from several tens of mA to several hundreds mA can be configured. Use a low saturation type PNP
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100mA,
Room403,
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SD1460
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1460 VHF Power Transistor The SD1460 is a 28V VHF Transistor designed primarily to be used in FM broadcast applications in class A,B or C modes of operation. The device utilizes
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SD1460
SD1460
108MHz
108MHz)
-108MHz)
08MHz)
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Untitled
Abstract: No abstract text available
Text: R5527K SERIES 3A Load Switch IC NO. EA-312-140124 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state are realized.
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R5527K
EA-312-140124
1612-4D
Room403,
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10F-1,
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2sa1441
Abstract: No abstract text available
Text: R1151N Series 18.5V Input LDO with External Tr. and VD The R1151N Series are CMOS-based LDO regulators with external power transistor. By using an external PNP transistor, a low dropout voltage regulator can be configured ranging from several tens of mA to several hundreds mA. Use a low saturation type PNP
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R1151N
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2sa1441
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12-CE 519
Abstract: 2569s
Text: R5540K SERIES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state
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R5540K
EA-268-111028
R5540
1010-4F,
Room403,
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12-CE 519
2569s
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Untitled
Abstract: No abstract text available
Text: R1225N Series PWM/VFM Step-down DC/DC Controller with Ext. Tr. The R1225N Series are low supply current CMOS-based PWM/VFM controlled step-down DC/DC controllers with an external output transistor. By simply using a power transistor, an inductor, a diode, and a capacitor as external components, a high-efficiency step-down
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R1225N
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R1224N
Abstract: No abstract text available
Text: R1224N Series 18.5V Input PWM/VFM Step-down DC/DC Controller with Ext. Tr. The R1224N Series are low supply current CMOS-based PWM/VFM step-down DC/DC controller with an external output transistor. By simply using a power transistor, an inductor, a diode, and a capacitor as external components, a high-efficiency step-down DC/DC
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R1224N
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step-down sot-23-5 input
Abstract: No abstract text available
Text: R1224N Series PWM/VFM Step-down DC/DC Controller with Ext. Tr. The R1224N Series are low supply current CMOS-based PWM/VFM step-down DC/DC controller with an external output transistor. By simply using a power transistor, an inductor, a diode, and a capacitor as external components, a high-efficiency step-down DC/DC
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R1224N
Room403,
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step-down sot-23-5 input
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Untitled
Abstract: No abstract text available
Text: R1224N Series 18.5V Input PWM/VFM Step-down DC/DC Controller with Ext. Tr. The R1224N Series are low supply current CMOS-based PWM/VFM step-down DC/DC controller with an external output transistor. By simply using a power transistor, an inductor, a diode, and a capacitor as external components, a high-efficiency step-down DC/DC
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R1224N
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor B 1184
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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BUK9618-30
SQT404
transistor B 1184
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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philips BFW30
Abstract: B 1184 BFW30 transistor 1183 IEC134
Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL *7 ^ 3 / StE D • S '? BFW30 711Gfl5b DtmbOSb 17E BiPHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the
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BFW30
711DflSb
004bDEfl
philips BFW30
B 1184
BFW30
transistor 1183
IEC134
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BFW30
Abstract: IEC134
Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL *7 ^ 3 / StE D • S '? BFW30 711Gfl5b DtmbOSb 17E BiPHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the
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BFW30
711DflSb
004bDEfl
BFW30
IEC134
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philips BFW30
Abstract: BFW30 transistor 1183
Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor PHILIPS INTERNATIONA L DESCRIPTION BFW30 SbE D • 7110flSb 004fc>G2b 172 * P H I N PINNING NPN transistor in a TO-72 metal envelope, with Insulated electrodes and a shield lead connected to the
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3/BFW30
7110fl2b
004b02b
7110aSb
philips BFW30
BFW30
transistor 1183
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transistor B 1184
Abstract: BFW30 philips BFW30
Text: bbsaqai □□3213b 730 Philips Sem iconductors • ADY Product specification NPN 2 GHz wideband transistor — ^ i BFW30 N bTE T> AMER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a T O -7 2 metal envelope, with insulated electrodes and a shield lead connected to the
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3213b
BFW30
aTO-72
transistor B 1184
BFW30
philips BFW30
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors • bbS 3131 □□33131a 730 M AD Y Product specification NPN 2 GHz wideband transistor — BFW30 N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the
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33131a
BFW30
bb53T31
MEA416
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cq 636 g transistor
Abstract: No abstract text available
Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.
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BFS17A
cq 636 g transistor
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