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    TRANSISTOR 10A 60V Search Results

    TRANSISTOR 10A 60V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ529STR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -10A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2925STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 80Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SJ547-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -10A 210Mohm To-220Fm Visit Renesas Electronics Corporation
    2SJ539-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -10A 210Mohm To-220Ab Visit Renesas Electronics Corporation
    2SJ529STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -10A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2927-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 10A 75Mohm To-220Ab Visit Renesas Electronics Corporation

    TRANSISTOR 10A 60V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2n3772

    Abstract: 2N3772
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and


    Original     		PDF 2N3772 50kHz transistor 2n3772 2N3772

    2N6438

    Abstract: No abstract text available
    Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.


    Original     		PDF 2N6438 2N6438

    722 smd transistor

    Abstract: transistor smd marking 94 FMMT722 TRANSISTOR SMD 1a 9 transistor smd br
    Text: Transistors IC SMD Type Switching Transistor FMMT722 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current. +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A.


    Original     		PDF FMMT722 OT-23 625mW -20mA -100mA -200mA -10mA, -50mA 100MHz 722 smd transistor transistor smd marking 94 FMMT722 TRANSISTOR SMD 1a 9 transistor smd br

    12v class d amplifier 70W

    Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V


    Original     		PDF HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP4080A HIP2060AS2 AN8610 1350P

    12v class d amplifier 70W

    Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V


    Original     		PDF HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP2060AS2 HIP4080A Transistor S1D

    BDV91

    Abstract: transistor BDV95 BDV93 BDV95
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDV91/93/95 DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 45V(Min)- BDV91; 60V(Min)- BDV93 80V(Min)- BDV95 ·Complement to Type BDV92/94/96


    Original     		PDF BDV91/93/95 BDV91; BDV93 BDV95 BDV92/94/96 BDV91 BDV91 transistor BDV95 BDV93 BDV95

    BDV96

    Abstract: BDV94 BDV91 BDV92
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION •Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95


    Original     		PDF BDV92/94/96 BDV92; BDV94 BDV96 BDV91/93/95 BDV92 BDV96 BDV94 BDV91 BDV92

    NPN Transistor TO92 300ma

    Abstract: npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR
    Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure


    Original     		PDF TSC5988 300mA TSC5988CT NPN Transistor TO92 300ma npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR

    transistor E11

    Abstract: NPN Transistor TO92 300ma POWER AND MEDIUM POWER TRANSISTOR
    Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure


    Original     		PDF TSC5988 300mA TSC5988CT transistor E11 NPN Transistor TO92 300ma POWER AND MEDIUM POWER TRANSISTOR

    lf817

    Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
    Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V


    Original     		PDF SLA8004 100max 60max 60min 150min 35max 55min 80min lf817 pnp 8 transistor array pnp array SLA8004 1/stv 9902

    transistor BD245

    Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C


    Original     		PDF BD245/A/B/C BD245; BD245A BD245B; BD245C BD246/A/B/C BD245 BD245B transistor BD245 BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V

    2SA1599

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -5A ·Large Current Capability-IC= -10A


    Original     		PDF 2SA1599 2SA1599

    Tenma

    Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
    Text: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals


    Original     		PDF 300mA 20K/volt Tenma pnp transistor 1000v philips AA Alkaline battery dimensions

    transistor bdx66

    Abstract: BDX66B TRANSISTOR BDX66 BDX66C BDX66B BDX66A BDX66 BDX66A BDX66C Transistor Audio Output Transistor Amplifier BDX67 data transistor darlington for High Power Audio
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000 Min @ IC= -10A ·Complement to Type BDX67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX67/A/B/C BDX66 BDX66B BDX66A BDX66C transistor bdx66 BDX66B TRANSISTOR BDX66 BDX66C BDX66B BDX66A BDX66 BDX66A BDX66C Transistor Audio Output Transistor Amplifier BDX67 data transistor darlington for High Power Audio

    Untitled

    Abstract: No abstract text available
    Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.55V @ IC / IB = 6A / 300mA (Max.) Excellent gain characteristics specified up to 10A


    Original     		PDF TSC5988 300mA TSC5988CT

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max


    Original     		PDF SLA8004 LF817) 100max 60max 60min 150min 35max 55min

    Untitled

    Abstract: No abstract text available
    Text: , Una. J C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY57 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=125V(Min.) • Low Collector Saturation Voltage:V CE (wt)=1.3V@lc=10A


    Original     		PDF BUY57

    Untitled

    Abstract: No abstract text available
    Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA TELEPHONE: 973 376-2922 (212)227-6005 BUY73 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 200V(Min.) • Low Collector Saturation Voltage:V C E(.at)=1.4V@l c =10A


    Original     		PDF BUY73

    Untitled

    Abstract: No abstract text available
    Text: zSzmi-Conauctoi \P\odu.ci^, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY58 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 160V(Min.) • Low Collector Saturation Voltage:V CE (.at)=1.3V@l c =10A


    Original     		PDF BUY58

    NTE72

    Abstract: No abstract text available
    Text: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required


    Original     		PDF NTE72 30MHz 20MHz NTE72

    Untitled

    Abstract: No abstract text available
    Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4065 100max 60max 60min 50min 35max 24typ 180typ 2SA1568) O220F)

    2SA1568

    Abstract: 2SC4065 FM20
    Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 IEBO V V(BR)CEO ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4065 2SA1568) 60max 60min 50min 35max 24typ 180typ 100max 2SA1568 2SC4065 FM20

    25E03

    Abstract: No abstract text available
    Text: HIP2060 fü HARRIS S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001A A ALTERNATE VERSIO N HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(QN) Max Per Transistor at VGS = 15V


    OCR Scan     		PDF HIP2060 TS-001A HIP2060 100mJ 1-800-4-HARRIS 25E03

    Untitled

    Abstract: No abstract text available
    Text: . 1/ ' " H IP 5060 HARRIS S E M I C O N D U C T O R 1 Features Description Single Chip Current Mode Control 1C • 60V, 10A On-chip D M O S Transistor • Thermal Protection • Over-Voltage Protection • Over-Current Protection • 1MHz Operation or External Clock


    OCR Scan     		PDF My1992 HIP5060 1-800-4-HARRIS