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    TRANSISTOR 1060 Search Results

    TRANSISTOR 1060 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    foto sensor

    Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
    Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor


    Original     		PDF GPXY6052 foto sensor optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263

    foto sensor

    Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
    Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor


    Original     		PDF GPX06992 foto sensor Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter

    1030mhz

    Abstract: 2TD12 HV400 SM200 1090mhz
    Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed


    Original     		PDF HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    PHX5N50

    Abstract: smps 12 volt 3 amp PHP8N50 PHX4N60
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


    Original     		PDF OT186A PHX5N50 PHX5N50 smps 12 volt 3 amp PHP8N50 PHX4N60

    BUK457-500B

    Abstract: PHP8N50 PHW9ND50 FREDFET
    Text: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge


    Original     		PDF OT429 PHW9ND50 BUK457-500B PHP8N50 PHW9ND50 FREDFET

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A) BLA1011-200 OT502A

    4 pin dual-emitter

    Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587

    PHP8N50

    Abstract: BUK457-500B
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling


    Original     		PDF O220AB PHP8N50 PHP8N50 BUK457-500B

    200B

    Abstract: BLA1011-2 MGU487 gp 516
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A


    Original     		PDF M3D438 BLA1011-2 OT538A SCA74 613524/03/pp8 200B BLA1011-2 MGU487 gp 516

    BLA1011-200

    Abstract: SMD0508
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 May 15 2002 Mar 18 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A SCA74 613524/06/pp12 BLA1011-200 SMD0508

    BUK457-500B

    Abstract: PHP8N50 PHW9N50
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling


    Original     		PDF OT429 PHW9N50 BUK457-500B PHP8N50 PHW9N50

    multilayer ceramic capacitor philips

    Abstract: BLA1011-200
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A 613524/05/pp12 multilayer ceramic capacitor philips BLA1011-200

    S 1040 smd

    Abstract: multilayer ceramic capacitor philips 200B BLA1011-2 MGU487
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Jun 07 2001 Nov 05 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A


    Original     		PDF M3D438 BLA1011-2 OT538A SCA73 613524/02/pp8 S 1040 smd multilayer ceramic capacitor philips 200B BLA1011-2 MGU487

    SMD0508

    Abstract: BLA1011-200
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2002 Mar 18 2003 Nov 11 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A


    Original     		PDF M3D379 BLA1011-200 OT502A SCA75 R77/07/pp10 SMD0508 BLA1011-200

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060

    SD 1062 transistor

    Abstract: TRANSISTOR b100 D 1062 transistor
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK7840-55 OT223 OT223. SD 1062 transistor TRANSISTOR b100 D 1062 transistor

    Untitled

    Abstract: No abstract text available
    Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001420b BLY93A r3774

    BLY93A

    Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
    Text: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001450t. BLY93A OT-56. Tmb-25 BLY93A D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060

    MJ 5030

    Abstract: TRANSISTOR M 1061
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP3N50E T0220AB MJ 5030 TRANSISTOR M 1061