foto sensor
Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor
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GPXY6052
foto sensor
optical interrupter darlington
gabellichtschranke
datasheet ic 4060
Fototransistor
Q62702-P5263
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foto sensor
Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor
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GPX06992
foto sensor
Fototransistor
opto counter
Opto Interrupter slotted
1/IRF 9330
gabellichtschranke
Q62702-P5263
w 9330
opto sensor counter
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2SA1444 equivalent
Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992
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X13769XJ2V0CD00
2SA1206
2SC1674
2SA988
2SA992
2SC1841
2SC1845
2SA733
2SA990
2SC945
2SA1444 equivalent
BA1F4M
transistor equivalent table
POWER MOS FET 2sj 2sk
2sd882 equivalent
Equivalent to transistor 2sc945
2SA1206 TRANSISTOR equivalent
2SC1845 equivalent
2SK type
2SD1694 equivalent
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transistor tt 2222
Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and
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711002b
BLY87C
transistor tt 2222
Trimmer 10-60 pf
transistor h 1061
15 w RF POWER TRANSISTOR NPN
bly87c
IEC134
yl 1060
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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PHX5N50
Abstract: smps 12 volt 3 amp PHP8N50 PHX4N60
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast
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OT186A
PHX5N50
PHX5N50
smps 12 volt 3 amp
PHP8N50
PHX4N60
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BUK457-500B
Abstract: PHP8N50 PHW9ND50 FREDFET
Text: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge
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OT429
PHW9ND50
BUK457-500B
PHP8N50
PHW9ND50
FREDFET
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BLA1011-200
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA1011-200
OT502A
f4825
BLA1011-200
BP317
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain
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M3D379
BLA1011-200
OT502A)
BLA1011-200
OT502A
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SD 1062 transistor
Abstract: TRANSISTOR b100 D 1062 transistor
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK7840-55
OT223
OT223.
SD 1062 transistor
TRANSISTOR b100
D 1062 transistor
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Untitled
Abstract: No abstract text available
Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran
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001420b
BLY93A
r3774
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4 pin dual-emitter
Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU540
SCA73
125104/00/04/pp12
4 pin dual-emitter
BFU540
10GHz oscillator
MARKING A4 transistor
o-50
RF NPN POWER TRANSISTOR 2.5 GHZ
RF TRANSISTOR 10GHZ low noise
transistor D 587
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PHP8N50
Abstract: BUK457-500B
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling
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O220AB
PHP8N50
PHP8N50
BUK457-500B
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200B
Abstract: BLA1011-2 MGU487 gp 516
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A
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M3D438
BLA1011-2
OT538A
SCA74
613524/03/pp8
200B
BLA1011-2
MGU487
gp 516
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MJ 5030
Abstract: TRANSISTOR M 1061
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP3N50E
T0220AB
MJ 5030
TRANSISTOR M 1061
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BLA1011-200
Abstract: SMD0508
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 May 15 2002 Mar 18 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
SCA74
613524/06/pp12
BLA1011-200
SMD0508
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BUK457-500B
Abstract: PHP8N50 PHW9N50
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling
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OT429
PHW9N50
BUK457-500B
PHP8N50
PHW9N50
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
BLA1011-200
613524/04/pp12
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multilayer ceramic capacitor philips
Abstract: BLA1011-200
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
613524/05/pp12
multilayer ceramic capacitor philips
BLA1011-200
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S 1040 smd
Abstract: multilayer ceramic capacitor philips 200B BLA1011-2 MGU487
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Jun 07 2001 Nov 05 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A
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M3D438
BLA1011-2
OT538A
SCA73
613524/02/pp8
S 1040 smd
multilayer ceramic capacitor philips
200B
BLA1011-2
MGU487
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PDF
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SMD0508
Abstract: BLA1011-200
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2002 Mar 18 2003 Nov 11 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A
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M3D379
BLA1011-200
OT502A
SCA75
R77/07/pp10
SMD0508
BLA1011-200
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain
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M3D381
BLA1011-10
OT467C
SCA75
R77/05/pp9
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