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    TRANSISTOR 1022 Search Results

    TRANSISTOR 1022 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1022 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5311DW1T1 MUN5316DW1T1

    tsx pcu 1030

    Abstract: TSX NANO PL7-07 TSX NANO modicon plc TSX 07 31 2428 TSX 07 software TSX 07 31 2428 TSX NANO CABLE TSX 07 TSX NANO CABLE modicon tsx NANO 07 31 2428 TSX 07 21 2428
    Text: Modicon TSX Nano-programmable controllers References Basic Modicon TSX Nano units 1 Number of I/O Inputs Relay outputs Transistor outputs 24 V 0.5 A Extended communication (2) Reference (3) Weight 4 – Yes TSX 07 30 1022 0.290 – 4 protected, positive logic


    Original     		PDF Nano/PL7-07 tsx pcu 1030 TSX NANO PL7-07 TSX NANO modicon plc TSX 07 31 2428 TSX 07 software TSX 07 31 2428 TSX NANO CABLE TSX 07 TSX NANO CABLE modicon tsx NANO 07 31 2428 TSX 07 21 2428

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    TRANSISTOR FS 10 TM

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF PHP15N06E T0220AB TRANSISTOR FS 10 TM

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eifect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF PHP15N06E T0220AB

    GIS 110 kV

    Abstract: N25Y
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench' technology the device


    OCR Scan     		PDF BUK7620-55 SQT404 GIS 110 kV N25Y

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    Untitled

    Abstract: No abstract text available
    Text: How To Handle Transistors Although SANYO makes ail possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the conditions under which the transistors are used. These


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    MICRO SWITCH FREEPORT. ILL. U.S.A

    Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3
    Text: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN


    OCR Scan     		PDF CO79902 PR22156 C08374-1 C093789 R23775 PR237B7 PR23760 C093843 C095107 CO-95704 MICRO SWITCH FREEPORT. ILL. U.S.A VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz


    OCR Scan     		PDF bb53T31 0D32142 BFW92A/02 BFW92A BFW92

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750


    OCR Scan     		PDF QM200DY-24B QM2000Y-24B E80276 E80271

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK lc Collector current. 150A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM150DY-2HBK E80276 E80271 transistor eb 2030

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TB-2HB Ic Collector current. 15A Vcex Collector-emitter voltage 1000V hFE DC current gain.250 Insulated Type UL Recognized


    OCR Scan     		PDF QM15TB-2HB E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM150HY-2H lc Collector current. 150A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM150HY-2H E80276 E80271

    G016

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES ; QM300DY-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE QM 300DY-2HB { •1C Collector current. 300A • V cex Collector-emitter voltage.1000V • hFE DC current gain. 750 • Insulated Type


    OCR Scan     		PDF QM300DY-2HB 300DY-2HB E80276 E80271 G016

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 200D Y-2H lc Collector current. 200A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM200DY-2H E80276 E80271

    transistor c516

    Abstract: c516 transistor bu108
    Text: TBA920S J \ _ HORIZONTAL COMBINATION The TBA920 is a monolithic integrated circuit intended for television receivers with transistor, thyris­ tor, or tube-equipped output stages. It combines the following functions: - noise gated sync separator


    OCR Scan     		PDF TBA920S TBA920 transistor c516 c516 transistor bu108