10160-001
Abstract: std motor G3202 00002EE0 g3425
Text: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the
|
Original
|
PDF
|
OSVERT-130
10160-001
std motor
G3202
00002EE0
g3425
|
Untitled
Abstract: No abstract text available
Text: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
|
Original
|
PDF
|
MUN5311DW1T1
MUN5316DW1T1
|
2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
|
Original
|
PDF
|
3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
|
capicitor
Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride
|
Original
|
PDF
|
220QBK-ND
1-877-GOLDMOS
1522-PTF
capicitor
smd transistor 513
500 watts amplifier schematic diagram
transistor SMD LOA
G200
PCC103BNCT-ND
smd L19
|
E101 FET
Abstract: transistor E101
Text: PRELIMINARY PTF 10160* 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The 10160 is an input and output matched 85 watt LDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. This device operates at 53% efficiency with 15 dB of gain minimum. Full
|
Original
|
PDF
|
1-877-GOLDMOS
1301-PTF
E101 FET
transistor E101
|
G200
Abstract: 415 - 0930 capacitor 2200 uF siemens
Text: PTF 10162 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization
|
Original
|
PDF
|
1-877-GOLDMOS
1301-PTF
G200
415 - 0930
capacitor 2200 uF siemens
|
10160A
Abstract: G200
Text: PTF 10160 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
PDF
|
P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
10160A
G200
|
OZ 960
Abstract: G200
Text: PTF 10160 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
PDF
|
1-877-GOLDMOS
1522-PTF
OZ 960
G200
|
cgs resistor
Abstract: G200 85-watt DBX16
Text: PTF 10160 GOLDMOS Field Effect Transistor 85 Watts, 860–960 MHz Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
PDF
|
P4525
P5182
1-877-GOLDMOS
1522-PTF
cgs resistor
G200
85-watt
DBX16
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
PHP12N10E
T0220AB
PHP12N1OE
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable lor surface mounting. Using ’trench’ technology the device
|
OCR Scan
|
PDF
|
BUK7618-55
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
PDF
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
|
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
B 1566 Transistor
Abstract: EW 9016 Transistor B 1566
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor
|
OCR Scan
|
PDF
|
PBR951
PBR951
125104/1200/05/pp16
B 1566 Transistor
EW 9016
Transistor B 1566
|
XR-2203
Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub
|
OCR Scan
|
PDF
|
XR-220172/3/4
XR-2201,
XR-2202,
XR-2203,
XR-2204
500mA
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2203
XR-2203CP
XR2203CP
XR2204CP
2203CP
XR-2202
2204cp
XR2203
XR2204
|
diode b24a
Abstract: diode v3e Mitsubishi transistor QM600H
Text: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES
|
OCR Scan
|
PDF
|
QM600HD-M
diode b24a
diode v3e
Mitsubishi transistor
QM600H
|
Untitled
Abstract: No abstract text available
Text: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers
|
OCR Scan
|
PDF
|
BFQ149
|
Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
|
OCR Scan
|
PDF
|
O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
|
907 TRANSISTOR smd
Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
Text: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in
|
OCR Scan
|
PDF
|
BFQ149
MSB013
907 TRANSISTOR smd
smd transistor 547
smd transistor code 314
703 TRANSISTOR smd
TRANSISTOR SMd jg data
T3D 97
SMD CODE SOT89 lc
T3D 63
BFQ149
transistor smd pnp 526
|
transistor TC-10
Abstract: 2al2 tcj 103 L200H LV 1016 2SC3093 LA 7113
Text: 2SC3093 NPN Triple Diffused Planar Type Silicon Transistor For Sw itch ing Regulator Use ★ High reverse voltago 800V min ★ High speed switching use. ♦Wide ASO '!>1016 • 4. VcftjÄBO O V . • • » tV Î ’X i f - • aso * < i i : V « 'J U ' t*.
|
OCR Scan
|
PDF
|
2SC3093
/Ta-25
/T4-25sC
transistor TC-10
2al2
tcj 103
L200H
LV 1016
2SC3093
LA 7113
|
transistor c516
Abstract: c516 transistor bu108
Text: TBA920S J \ _ HORIZONTAL COMBINATION The TBA920 is a monolithic integrated circuit intended for television receivers with transistor, thyris tor, or tube-equipped output stages. It combines the following functions: - noise gated sync separator
|
OCR Scan
|
PDF
|
TBA920S
TBA920
transistor c516
c516 transistor
bu108
|
transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
|
OCR Scan
|
PDF
|
|
