transistor 1012 F
Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012 F
transistor 1012
CSA1012
1012 transistor
1012 npn
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transistor 1012
Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Text: ,6,62 /LF 46&/ Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012
CSA1012
hFE is transistor to-220
c 2562
hFE is transistor to220
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PHILIPS SENSOR 2032
Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V
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1616H
101CCD
WAG-05
PHILIPS SENSOR 2032
.47k capacitor image
ccd image sensor
Contact image sensor
BAS28
BAT74
BC860C
BFR92
BG40
CCD output buffer
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Untitled
Abstract: No abstract text available
Text: Neutron testing of the ISL70444SEH quad operational amplifier Nick van Vonno Intersil Corporation 15 October 2013 Revision 0 Table of Contents 1. Introduction 2. Part Description 3. Test Description 3.1 Irradiation facility 3.2 Characterization equipment 3.3 Experimental Matrix
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ISL70444SEH
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10Gb CDR
Abstract: BA rx transistor INF8077i Xlaui IC 555 architecture lc oscillator led based graphic equalizer ic P802 CEI-11G 11GSR
Text: Emerging Standards at ~10 Gbps for Wireline Communications and Associated Integrated Circuit Design and Validation An Invited Paper for CICC Mike Peng Li and Sergey Shumarayev Altera Corporation 101 Innovation Road San Jose, CA 95134 Abstract-We first review the signaling and jitter requirements
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40-nm
10Gb CDR
BA rx transistor
INF8077i
Xlaui
IC 555 architecture
lc oscillator
led based graphic equalizer ic
P802
CEI-11G
11GSR
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Untitled
Abstract: No abstract text available
Text: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C
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SFH636
i179064
2002/95/EC
2002/96/EC
SFH636
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C
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SFH636
i179064
2002/95/EC
2002/96/EC
SFH636
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Sil-Pad A2000 Higher Performance,High Reliability Insulator Features and Benefits T YPICAL PROPERT IES OF SIL-PAD A2000 PROPERTY Color • Thermal impedance: 0.32°C-in 2/W @50 psi • Optimal heat transfer • High thermal conductivity: 3.0 W/m-K IMPERIAL VALUE
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A2000
D2240
E1269
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smd transistor HX 45
Abstract: MSK2541
Text: ISO 9001 CERTIFIED BY DSCC DUAL HIGH POWER OP-AMP M.S. KENNEDY CORP. 8170 Thompson Road Cicero, N.Y. 13039 FEATURES: 2541 315 699-9201 MIL-PRF-38534 QUALIFIED Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V
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2541SKB
MIL-PRF-38534
MSK2541
MSK2541B
5962-9083801HX
smd transistor HX 45
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k 2541
Abstract: high power fet audio amplifier schematic capacitor, 50 microfarad 10v smd transistor HX 5962-9083801HX MSK2541 MSK2541B
Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP 2541 DUAL HIGH POWER OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V
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MIL-PRF-38534
2541SKB
MSK2541
MSK2541B
Military-MIL-PRF-38534
5962-9083801HX
k 2541
high power fet audio amplifier schematic
capacitor, 50 microfarad 10v
smd transistor HX
5962-9083801HX
MSK2541
MSK2541B
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GEOY6653
Abstract: Q62702-P215 Q62702-P216
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 229 SFH 229 FA SFH 229 SFH 229 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1100 nm SFH 229 und bei 880 nm (SFH 229 FA)
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GEOY6653
GEOY6653
Q62702-P215
Q62702-P216
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smd transistor HX
Abstract: 5962-9083801HX MSK2541E MSK2541 MSK2541B 2.2 microfarad non-electrolytic capacitor 8-pin to3 high power fet audio amplifier schematic h208 application of class B power amplifier with high load resistance
Text: MIL-PRF-38534 CERTIFIED M.S. KENNEDY CORP DUAL HIGH POWER OP-AMP 2541 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Available as SMD #5962-9083801 HX and 5962-9083803HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V
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MIL-PRF-38534
5962-9083803HX
2541SKB
MSK2541
MSK2541E
MSK2541B
5962-9083801HX
MIL-PRF-38534,
smd transistor HX
5962-9083801HX
MSK2541E
MSK2541
MSK2541B
2.2 microfarad non-electrolytic capacitor
8-pin to3
high power fet audio amplifier schematic
h208
application of class B power amplifier with high load resistance
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ksr1012
Abstract: No abstract text available
Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2012
ksr1012
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Untitled
Abstract: No abstract text available
Text: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation
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IL-S-19500
T4T70T
MIL-S-19500)
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6N13B
Abstract: 6H136 MGL250 MCL2501
Text: TT. mm flfl ! 3UALITY TECHNOLOGIES CORP D "I 7 4 h b û S l ?«ENERAD INSTRUMENT ¿g* DGOaTDT 3 'tnr-'¥/-&3 ^TRANSISTOR OPTOCOUPLERS m ê W m -• •* ' Ä S S Ä MCL2501 MGL2503 (HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON MINIMUM CTR SELECTION CHART
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MCL2501
MGL2503
HCPL-2503)
MCL2502
HCPL-2502)
6N136
6N135
MCL/HCPL-2503
6N135
6N13B
6H136
MGL250
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VIP 22A
Abstract: AD7546 Vip ct 22A
Text: AN ALO G D E V IC E S FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: -124dB at 1kHz Low Bias Current: 35pA max Warmed Up Low Offset Voltage: 250|iV max Low Input Voltage: 2|iV p-p
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-124dB
108dB
20-Pin
MIL-STD-883B
AD547
AD647
AD647
250/iV,
AD647J.
VIP 22A
AD7546
Vip ct 22A
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BUW52
Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
Text: 7^5^537 ppgaa?! M • S G S -T H O M S O N ■ [L d e T F G M O ! S G S - T HO MS ON B 3ÜE U W 5 2 D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN ABSOLUTE MAXIMUM RATINGS
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BUW52
O-218
BUW52
transistor st z7
S877
transistor 026a
N1010A
Scans-007954
LC8a
DQ26A
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Untitled
Abstract: No abstract text available
Text: That HEW LETT WHIM PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar
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4N49 opto
Abstract: No abstract text available
Text: 4N47, 4N48, 4N49 JAN. JANTX, AND JANTXV OPTOCOUPLERS D 3 0 3 1 , SEPTEMBER 1987 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Very High Current Transfer Ratio . . . 50 0% Typical 4N49 • Photon Coupling for Isolator Applications
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MIL-S-19
4N49 opto
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TRANSISTOR sd 346
Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Text: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen
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untersc0037
TRANSISTOR sd 346
Lautsprecher RFT L 2911
Lautsprecher LP
C 4804 transistor
TRANSISTOR b 882 p
rft lautsprecher
transistor GC 228
Transistor B 886
service-mitteilungen
RFT KR 650
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N1033A
Abstract: n1033 10000 series of ECL gates N1013A N1011A c 1006 TRANSISTOR eel -16-2005 N1017A N1010A N1014A
Text: S IG N E T IC S D IG IT A L 1 .0 0 0 /1 0 ,0 0 0 S E R IE S ECL V PART DC OUTPUT NO. <0 t o + 75UC Dual 4 In p u t Gate. L O A D IN G DELAY FA C TO R w e e ty p . 2 O R O u tp uts w/P ulldow ns 4 .0 2 N O R Outputs w /P ulldow ns Dual 4 In p u t Gat«, 2 O R Outputs w /P ulldow ns
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185MHz
N1033A
n1033
10000 series of ECL gates
N1013A
N1011A
c 1006 TRANSISTOR
eel -16-2005
N1017A
N1010A
N1014A
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2SC4215
Abstract: No abstract text available
Text: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)
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2SC4215
SC-70
2SC4215
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transistor TIP3055
Abstract: No abstract text available
Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.
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TIP3055
OT-93
TIP2955.
003302b
bbS3T31
00350Efl
transistor TIP3055
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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RZB12250Y
100ps;
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