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    TRANSISTOR 1012 Search Results

    TRANSISTOR 1012 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1012 F

    Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
    Text:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 F transistor 1012 CSA1012 1012 transistor 1012 npn

    transistor 1012

    Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    IC 7555 datasheet

    Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G
    Text: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


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    PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz IC 7555 datasheet NE 7555 200E 400E 500E HFA3102B96 NF50 UPA102G

    PH3230

    Abstract: No abstract text available
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


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    PDF PH3230 M3D748 OT669 PH3230

    sot3

    Abstract: marking 8A MUN5214T1
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF MUN5211T1 70/SOT sot3 marking 8A MUN5214T1

    PH3230

    Abstract: SOT669-LFPAK sot669 package
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


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    PDF PH3230 M3D748 OT669 PH3230 SOT669-LFPAK sot669 package

    pspice

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
    Text: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


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    PDF HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    BLV11

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    PDF OT-123. BLV11

    diode sy 400

    Abstract: sy 320 diode
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable


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    PDF PHP10N40E T0220AB diode sy 400 sy 320 diode

    bly87a

    Abstract: transistor c 1974
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D H 73,1002b 0 0 2 7 ^ 3 T B P H I N BLY87A T-33-07 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


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    PDF 1002b BLY87A T-33-07 --j16 bly87a transistor c 1974

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N4OE QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and


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    PDF PHP10N4OE T0220AB

    TLP421GB

    Abstract: TLP421 11-5B2 VDE0884 EN60065EN60950
    Text: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor


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    PDF TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603 TLP421GB 11-5B2 VDE0884 EN60065EN60950

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TLP421

    Abstract: TOSHIBA TUV 11-5B2 VDE0884 TLP421-2
    Text: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor


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    PDF TLP421 TLP421 UL1577 EN60065 EN60950 EN60065, EN60950, EN603hen TOSHIBA TUV 11-5B2 VDE0884 TLP421-2

    TLP721F

    Abstract: 74285 e152349 TOSHIBA VDE E67349 TLP721
    Text: TLP721F TOSHIBA TOSHIBA PHOTOCOUPLER OFFICE MACHINE SWITCHING POWER SUPPLY GaAs IRED & PHOTO-TRANSISTOR TLP721F Unit in mm 4 The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP.


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    PDF TLP721F TLP721F TLP721. E67349 E152349 UL1577 EN60065When 74285 e152349 TOSHIBA VDE E67349 TLP721

    MA3006

    Abstract: tlp731 E67349 TLP732 VDE0884
    Text: TLP731JLP732 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP731, TLP732 The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :


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    PDF TLP731 TLP732 TLP731, TLP732 UL1577, E67349 EN60065 MA3006 E67349 VDE0884

    E67349

    Abstract: TLP733 TLP734 VDE0884
    Text: TLP733JLP734 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP733, TLP734 The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :


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    PDF TLP733 TLP734 TLP733, TLP734 UL1577, E67349 EN60065 E67349 VDE0884

    Untitled

    Abstract: No abstract text available
    Text: TLP550 3aAÄAs IRED & PHOTO-IC TENTATIVE DEGITAL LOGIC ISOLATION. 8 7 6 c 3 4 LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. 1 2 TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor.


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    PDF TLP550 TLP550 2500Vrms E67349 --10C

    INVERTOR APPLICATION NOTE

    Abstract: No abstract text available
    Text: GaAÔAs IRED & PHOTO-IC TLP550 DEGITAL LOGIC ISOLATION. LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor. TLP550 has no base connection, and is suitable


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    PDF TLP550 TLP550 2500Vrms E67349 10C1E INVERTOR APPLICATION NOTE

    Untitled

    Abstract: No abstract text available
    Text: E HIGH-SPEED TRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS i - HCPL-2503 HCPL-4502 6N136 6N135 DESCRIPTION PACKAGE DIMENSIONS The HCPL-4502/HGPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.


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    PDF HCPL-2503 HCPL-4502 6N136 6N135 HCPL-4502/HGPL-2503 6N136/5 C1946 74bbflSl C2D00 DQ0b03fl