transistor 1012 F
Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012 F
transistor 1012
CSA1012
1012 transistor
1012 npn
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transistor 1012
Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Text: ,6,62 /LF 46&/ Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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O-220
C-120
CSA1012,
CSC2562Rev210701
transistor 1012
CSA1012
hFE is transistor to-220
c 2562
hFE is transistor to220
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486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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IC 7555 datasheet
Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G
Text: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array
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HFA3102
FN3635
HFA3102
10GHz)
10GHz
IC 7555 datasheet
NE 7555
200E
400E
500E
HFA3102B96
NF50
UPA102G
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PDF
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PH3230
Abstract: No abstract text available
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).
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PH3230
M3D748
OT669
PH3230
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sot3
Abstract: marking 8A MUN5214T1
Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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MUN5211T1
70/SOT
sot3
marking 8A
MUN5214T1
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PH3230
Abstract: SOT669-LFPAK sot669 package
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).
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PH3230
M3D748
OT669
PH3230
SOT669-LFPAK
sot669 package
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PDF
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pspice
Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
Text: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array
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Original
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HFA3102
HFA3102
10GHz)
10GHz
pspice
NE 7555
500E
800E
HFA3102B
HFA3102B96
NF50
UPA102G
UHF-1
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PDF
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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BLV11
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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OT-123.
BLV11
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diode sy 400
Abstract: sy 320 diode
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable
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PHP10N40E
T0220AB
diode sy 400
sy 320 diode
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bly87a
Abstract: transistor c 1974
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D H 73,1002b 0 0 2 7 ^ 3 T B P H I N BLY87A T-33-07 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to
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1002b
BLY87A
T-33-07
--j16
bly87a
transistor c 1974
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N4OE QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP10N4OE
T0220AB
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PDF
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TLP421GB
Abstract: TLP421 11-5B2 VDE0884 EN60065EN60950
Text: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor
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TLP421
TLP421
UL1577
EN60065
EN60950
EN60065,
EN60950,
EN603
TLP421GB
11-5B2
VDE0884
EN60065EN60950
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PDF
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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TLP421
Abstract: TOSHIBA TUV 11-5B2 VDE0884 TLP421-2
Text: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor
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TLP421
TLP421
UL1577
EN60065
EN60950
EN60065,
EN60950,
EN603hen
TOSHIBA TUV
11-5B2
VDE0884
TLP421-2
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PDF
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TLP721F
Abstract: 74285 e152349 TOSHIBA VDE E67349 TLP721
Text: TLP721F TOSHIBA TOSHIBA PHOTOCOUPLER OFFICE MACHINE SWITCHING POWER SUPPLY GaAs IRED & PHOTO-TRANSISTOR TLP721F Unit in mm 4 The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP.
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TLP721F
TLP721F
TLP721.
E67349
E152349
UL1577
EN60065When
74285
e152349
TOSHIBA VDE
E67349
TLP721
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PDF
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MA3006
Abstract: tlp731 E67349 TLP732 VDE0884
Text: TLP731JLP732 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP731, TLP732 The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :
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TLP731
TLP732
TLP731,
TLP732
UL1577,
E67349
EN60065
MA3006
E67349
VDE0884
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PDF
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E67349
Abstract: TLP733 TLP734 VDE0884
Text: TLP733JLP734 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP733, TLP734 The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :
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TLP733
TLP734
TLP733,
TLP734
UL1577,
E67349
EN60065
E67349
VDE0884
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PDF
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Untitled
Abstract: No abstract text available
Text: TLP550 3aAÄAs IRED & PHOTO-IC TENTATIVE DEGITAL LOGIC ISOLATION. 8 7 6 c 3 4 LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. 1 2 TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor.
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TLP550
TLP550
2500Vrms
E67349
--10C
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PDF
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INVERTOR APPLICATION NOTE
Abstract: No abstract text available
Text: GaAÔAs IRED & PHOTO-IC TLP550 DEGITAL LOGIC ISOLATION. LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor. TLP550 has no base connection, and is suitable
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TLP550
TLP550
2500Vrms
E67349
10C1E
INVERTOR APPLICATION NOTE
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PDF
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Untitled
Abstract: No abstract text available
Text: E HIGH-SPEED TRANSISTOR OPTOCOUPLERS U OPTOELECTRONICS i - HCPL-2503 HCPL-4502 6N136 6N135 DESCRIPTION PACKAGE DIMENSIONS The HCPL-4502/HGPL-2503 and 6N136/5 optocouplers contain a 700 nm GaAsP LED emitter, which is optically coupled to a high speed photodetector transistor.
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HCPL-2503
HCPL-4502
6N136
6N135
HCPL-4502/HGPL-2503
6N136/5
C1946
74bbflSl
C2D00
DQ0b03fl
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