PSMN015-100B
Abstract: PSMN015-100P
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA
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PSMN015-100B;
PSMN015-100P
PSMN015-100P
603502/300/03/pp12
PSMN015-100B
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PSMN015-100P,127
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA
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PSMN015-100B;
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100P,127
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Untitled
Abstract: No abstract text available
Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 2 — 10 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.
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BLF7G22L-100P;
BLF7G22LS-100P
BLF7G22L-100P
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 3 — 18 March 2013 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF8G27LS-100P
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 1 — 3 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF8G27LS-100P
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100P Power LDMOS transistor Rev. 2 — 20 December 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF8G27LS-100P
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BLF7G22LS-100P
Abstract: No abstract text available
Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF7G22L-100P;
BLF7G22LS-100P
BLF7G22L-100P
BLF7G22LS-100P
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flanged pin
Abstract: No abstract text available
Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF7G22L-100P;
BLF7G22LS-100P
BLF7G22L-100P
flanged pin
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BJT IC Vce
Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with
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HFA3134
MM3134
HFA3134,
BJT IC Vce
NPN Transistor Pair
npn tr array
pspice high frequency transistor
npn 8 transistor array
pspice model
MM3134
525E
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Untitled
Abstract: No abstract text available
Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance
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BLF7G22L-100P;
BLF7G22LS-100P
BLF7G22L-100P
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PSMN009-100B
Abstract: PSMN009-100P
Text: PSMN009-100P/100B N-channel enhancement mode field-effect transistor Rev. 01 — 29 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN009-100P in SOT78 TO-220AB
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PSMN009-100P/100B
PSMN009-100P
O-220AB)
PSMN009-100B
OT404
OT404,
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HFA3134
Abstract: npn 8 transistor array
Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with
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HFA3134
MM3134
HFA3134,
npn 8 transistor array
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DRF1601
Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.
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DRF1601
DRF1601
OT-223
900MHz
100nF
100pF
smd transistor js
UHF POWER TRANSISTOR
NPN medium power transistor in a smd
FR4 epoxy dielectric constant 4.2
power transistor
SMD TRANSISTOR
smd transistor 026
PL SOT223
UHF POWER
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smd transistor k 1540
Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.
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DRF1401
DRF1401
OT-223
900MHz
100nF
100pF
smd transistor k 1540
703 TRANSISTOR smd
transistor 835
transister
transister smd
NPN medium power transistor in a smd
SiGe POWER TRANSISTOR
SMD transister
smd transistor js
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Transistor lm 358
Abstract: lm 358 ic BC449
Text: CRO DESCRIPTION BC449 NPN SILICON TRANSISTOR 0 4 .6 8 T O -92 F 0 .1 8 [ BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 3.58 (0.14) (0 . 18 ) r~
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BC449
BC449
300mA
625mW
100mA
Transistor lm 358
lm 358 ic
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BUK555-100A
Abstract: transistor c 839 BUK555 transistor M 839
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK555-100A/B
BUK555
-100A
-100B
BUK555-100A/B
BUK555-100A
transistor c 839
BUK555
transistor M 839
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK553-100A/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK553-100A/B
BUK553
-100A
-100B
-T0220ABApril
BUK553-1OOA/B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high
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PHP3N20L
T0220AB
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BUK573
Abstract: BUK573-60A BUK573-60B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK573-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK573-60A/B
-SOT186A
BUK573-60A/B
OT186A;
BUK573
BUK573-60A
BUK573-60B
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BUK542
Abstract: BUK542-60A BUK542-60B
Text: Product specification Philips Semiconductors PowerMOS transistor BUK542-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK542-60A/B
BUK542
-SOT186
OT186;
BUK542-60A
BUK542-60B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for
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BUK562-60A
SQT404
BUK562-60A
tina14
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FET TH 469
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK545-200A/B
BUK545
-200A
-200B
FET TH 469
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK543-100A/B
BUK543
-100A
-100B
-SOT186
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LD 757 ps
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK545-100A/B
BUK545
-100A
-100B
BUK545-100A/B
1E-02
LD 757 ps
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