1004MP
Abstract: Avionics
Text: 1004MP 4 Watts, 35 Volts, Pulsed Avionics - 960-1215 MHz GENERAL DESCRIPTION The 1004MP is a COMMON BASE transistor capable of providing 4 Watts of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes
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1004MP
1004MP
Avionics
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1004MP
Abstract: No abstract text available
Text: 1004MP 4 Watts, 35 Volts Pulsed Avionics, 960 to 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1004MP is a COMMON BASE transistor capable of providing 4 Watts of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes gold
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1004MP
55FW-1
1004MP
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SOT-363 marking 7a
Abstract: sot363 marking 02 SOT-363 marking 22 SOT-363 marking 187 SOT363 marking 49 marking 7A 7L Marking MUN5235DW1T1 marking 7k sot363 MUN5237DW1T1
Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5211DW1T1
SOT-363 marking 7a
sot363 marking 02
SOT-363 marking 22
SOT-363 marking 187
SOT363 marking 49
marking 7A
7L Marking
MUN5235DW1T1
marking 7k sot363
MUN5237DW1T1
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LLE103101
Abstract: LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000
Text: LLE Series Liquid level sensors DESCRIPTION The enhanced series of liquid level sensors incorporates a the dome to the photo-transistor. When liquid covers the photo-transistor trigger which provides a digital output that dome, the effective refractive index at the dome-liquid
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100437-EN
LLE103101
LLE305000
LLE205100
honeywell 940
LLE101000
LLE102101
LLE101101
LLE102000
LLE103000
LLE105000
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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msc 140 -10003
Abstract: MSC1330 MSC 1330 Microwave Transistor msc diode AN565 1330 transistor power semiconductor 1973 MSC transistors
Text: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper
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AN565
30-watt
MSC-1330/A
MSC-1330/B,
msc 140 -10003
MSC1330
MSC 1330 Microwave Transistor
msc diode
AN565
1330 transistor
power semiconductor 1973
MSC transistors
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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MSC1330
Abstract: msc 140 -10003 AN565 MSC Microwave msc diode MSC 1330 Microwave Transistor T21004
Text: AN565 APPLICATION NOTE MEDIAN-TIME-TO-FAILURE MTF OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS W. E. Poole - L. G. Walshak 1. INTRODUCTION.1 At last year’s Symposium (1973), two papers presented preliminary data from the first known comprehensive life-tests on any microwave power transistor operated under RF conditions. This paper
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AN565
30-watt
MSC-1330/A
MSC-1330/B,
MSC1330
msc 140 -10003
AN565
MSC Microwave
msc diode
MSC 1330 Microwave Transistor
T21004
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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TRR25-10XX2
Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
Text: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR
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25-10xx2
30-06xx2
50-06XX2
50-10xx2
50-12XX2
75-10x
200-10XX2
300-10xx2
10-04L5
TRR25-10XX2
TRR 100-12xx2
transistor c282
trr 30-06xx2
TRANSISTOR BIPOLAIRE
75-10xx2
06XX2
5012-X
ISOLA DE 156
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bly89a
Abstract: Transistor bly89a
Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every
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Q01414fl
BLY89A
7Z675I
bly89a
Transistor bly89a
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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PHB36N06E
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose
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PHB36N06E
SQT404
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: N amer philips /di^ crete ~ □bE~p 86D 0 1 1 2 4 00133L2 □ • D T * -" 3 3 " ^ B L U 5 T “ ~ _ { _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband
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00133L2
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BLX65
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the
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BLX65
7Z61745
BLX65
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TPM4040
Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Text: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially
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TPM4040
1N4007
TPM4040
T-33-27
ITT 1N4007
BALLAST MOTOROLA
TRANSISTOR UO 112
motorola rf Power Transistor
1N4007, ITT
1N4007 DC COMPONENTS
tantal PACKAGE
1N4007 itt
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2N6364
Abstract: 75W NPN 100-400MHz 2N636
Text: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:
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2N6364
2N6364
100400Mhz
OT-161
75W NPN
100-400MHz
2N636
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2N6362
Abstract: 100-400MHz
Text: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:
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2N6362
2N6362
100400Mhz
OT-161
32flfl2T2
100-400MHz
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100-400MHz
Abstract: 2N6362 UHF TRANSISTOR
Text: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:
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2N6362
2N6362
100400Mhz
OT-161
32flfl2T2
100-400MHz
UHF TRANSISTOR
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