Diode B2x
Abstract: diode 6A 1000v E80276 QM300DY-2H Welder
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300DY-2H
E80276
E80271
Diode B2x
diode 6A 1000v
E80276
QM300DY-2H
Welder
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QM150DY-2HB
Abstract: E80276 QM150DY-2HBK QM150DY-2H QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM150DY-2HBK
E80276
E80271
QM150DY-2HB
E80276
QM150DY-2HBK
QM150DY-2H
QM15
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E80276
Abstract: QM300DY-2HB
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM300DY-2HB
E80276
E80271
E80276
QM300DY-2HB
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QM300HA-2H
Abstract: 1000V 20A transistor QM300HA-2H equivalent E80276 9303C
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300HA-2H
E80276
E80271
108MAX.
62MAX.
36MAX.
QM300HA-2H
1000V 20A transistor
QM300HA-2H equivalent
E80276
9303C
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d 5287
Abstract: 2SC5264
Text: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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ENN5287
2SC5264
2079C
2SC5264]
O-220FI-LS
10Ltd.
d 5287
2SC5264
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STU6NA100
Abstract: No abstract text available
Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU6NA100
Max220
100oC
STU6NA100
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U6NA100
Abstract: STU6NA100
Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU6NA100
Max220
U6NA100
100oC
U6NA100
STU6NA100
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2SC5521
Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
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500V/1600V/1700V/1800V/2000V
2SC5521
2SC5522
2SC5584
2sc5524
2SC5517
2SC5516
2SC5516 equivalent
2sc5572
2SC5622
2SC5546
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NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
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NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
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transistor 1000V 6A
Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300AA100
E76102
SQD300AA100
SQD300AA120
transistor 1000V 6A
diode 6A 1000v
transistor VCE 1000V
Ultrasonic moter application
transistor 1000V
high current darlington transistor
SQD300AA120
M6 transistor
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QCA150AA100
Abstract: QCA150AA120 24TRANSISTOR E76102
Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA150AA100
E76102
QCA150AA100
QCA150AA120
QCA150AA120
24TRANSISTOR
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QM30DY-2H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type
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QM30DY-2H
E80276
E80271
QM30DY-2H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300DY-2H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30DY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM30DY-2H
30DY-2H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized
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QM800HA-2HB
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 300H A-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300HA-2H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75
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QM30E2Y/
QM30E2Y/E3Y-2H
E80276
E80271
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QM300HA-2H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N
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QM300HA-2H
E80276
E80271
rQrr10'
QM300HA-2H
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TIC 136 Transistor
Abstract: No abstract text available
Text: STU6NA100 N - CHANNEL 1000V - 1 .45ß - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S T U 6N A 100 1000 V R dS oii Id a 6 A < 1 .7 . TYPICAL RDs(on) = 1.45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STU6NA100
Max220
Max220
TIC 136 Transistor
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Untitled
Abstract: No abstract text available
Text: STU 6N A100 N - CHANNEL 1000V - 1 .45Q - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S T U 6 N A 1 00 V dss 1000 V RDS on < 1.7 Q. Id 6A • TYPICAL R D S (on) = 1 .45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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Max220
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TRANSISTOR BDX
Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T
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BUV48
BUV47
O-22CIAB
CB-117
BUV37
CB-244
CB-285
TRANSISTOR BDX
TRANSISTOR BDX 285
pnp transistor 1000v
TRANSISTOR BDX 53
transistor BDX 65
transistor BDX 80
bux diode
darlington NPN 1000V isotop
DARLINGTON ESM 749
transistor BU 184
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pnp transistor 1000v
Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A
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BUV48
BUV47
CB-244
CB-285
pnp transistor 1000v
transistor buv 90
bux diode
darlington NPN 1000V transistor
pnp transistor 600V
transistor ESM 30
buv PNP
transistor BU 104
NPN Transistor VCEO 1000V
transistor BUX 48
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5011s
Abstract: 2SC3846
Text: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range
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374T7b2
2SC3846
2SC3846
D01bb37
5011s
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KS621K30
Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS621K30
Amperes/1000
KS621K30
transistor S56
transistor s55
lem lc 300
KS621
powerex ks62
transistor VCEO 1000V
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