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    TRANSISTOR 1.25W Search Results

    TRANSISTOR 1.25W Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1.25W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    5962F0721805VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC

    NTE179

    Abstract: No abstract text available
    Text: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating


    Original     		PDF NTE179 NTE179 100mA 500mA,

    SMD TRANSISTORS AAA

    Abstract: GDIP1-T16 HFA3127 high frequency transistor
    Text: HFA3127/883 Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    Original     		PDF HFA3127/883 MIL-STD883 HFA3127/883 SMD TRANSISTORS AAA GDIP1-T16 HFA3127 high frequency transistor

    HARRIS SEMICONDUCTOR APPLICATION NOTES

    Abstract: SMD TRANSISTORS AAA GDIP1-T16 HFA3127 harris 8 lead cerdip DIMENSIONS
    Text: HFA3127/883 S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    Original     		PDF HFA3127/883 MIL-STD883 HFA3127/883 1-800-4-HARRIS HARRIS SEMICONDUCTOR APPLICATION NOTES SMD TRANSISTORS AAA GDIP1-T16 HFA3127 harris 8 lead cerdip DIMENSIONS

    NTE2320

    Abstract: No abstract text available
    Text: NTE2320 Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp Complementary Pair Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		PDF NTE2320 500mA 150mA, NTE2320

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR NPN TO-126 FEATURES 1.BASE • 2.COLLECTOR High total power disspation.(pc=1.25w) 3.EMITTER 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF O-126 3DD13003 O-126 1000mA 1000mA, 250mA 100mA

    ZXTN25015DFH

    Abstract: ZXTP25015DFH ZXTP25015DFHTA
    Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25015DFH -55mV ZXTN25015DFH ZXTN25015DFH ZXTP25015DFH ZXTP25015DFHTA

    ZXTN25015DFH

    Abstract: ZXTP25015DFH ZXTP25015DFHTA
    Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25015DFH -55mV ZXTN25015DFH ZXTN25015DFH ZXTP25015DFH ZXTP25015DFHTA

    ZXTN25020CFH

    Abstract: ZXTP25020CFH ZXTP25020CFHTA small driver igbt
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH ZXTN25020CFH ZXTP25020CFH ZXTP25020CFHTA small driver igbt

    ZXTP25020CFH

    Abstract: TS16949 ZXTN25020CFH ZXTP25020CFHTA
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 ZXTP25020CFH TS16949 ZXTN25020CFH ZXTP25020CFHTA

    TS16949

    Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 TS16949 ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA

    Untitled

    Abstract: No abstract text available
    Text: TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR NPN TO-126 FEATURES 1.BASE • 2.COLLECTOR High total power disspation.(pc=1.25w) 3.EMITTER 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-126 3DD13003 O-126 volt00 1000mA 1000mA, 250mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh

    ZXTN25100CFH

    Abstract: design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541 ZXTN25100CFH design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER

    Untitled

    Abstract: No abstract text available
    Text: RSQ025P03 Transistor 4V Drive Pch MOS FET RSQ025P03 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance.(120mΩ at 4.5V) 2) High Power Package.(PD=1.25W) 3) High speed switching.


    Original     		PDF RSQ025P03

    ZXTN25100DFH

    Abstract: ZXTN25100DFHTA ZXTP25100DFH
    Text: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25100DFH ZXTP25100DFH ZXTN25100DFH ZXTN25100DFHTA ZXTP25100DFH

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    OCR Scan     		PDF HFA3127/883 MIL-STD883 HFA3127/883

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF