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    TRANSISTOR 1 J42 Search Results

    TRANSISTOR 1 J42 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1 J42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j4215

    Abstract: j4215o FJL4215OTU
    Text: FJL4215 FJL4215 Audio Power Amplifier • • • • High Current Capability IC = -15A High Power Dissipation Wide S.O.A Complement to FJL4315 TO-264 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF FJL4215 FJL4315 O-264 FJL4215 FJL4215OTU j4215 j4215o

    J4210F-Y

    Abstract: J4210 J4210F-R J4210F-O FJAF4210YTU FJAF4210OTU
    Text: FJAF4210 FJAF4210 Audio Power Amplifier • • • • High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJAF4310 TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF FJAF4210 FJAF4310 FJAF4210 FJAF4210OTU FJAF4210RTU FJAF4210YTU J4210F-Y J4210 J4210F-R J4210F-O

    j4213

    Abstract: j4213-o FJA4213RTU
    Text: FJA4213 FJA4213 Audio Power Amplifier • • • • High Current Capability IC = -15A High Power Dissipation Wide S.O.A Complement to FJA4313 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF FJA4213 FJA4313 FJA4213 FJA4213OTU FJA4213RTU j4213 j4213-o

    fc1a-cla

    Abstract: PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc
    Text: U905 Catalog Section A note from IDEC: Due to continuous product improvements, specifications are subject to change without notice. For up-to-date information, or to request a full copy of this catalog, please visit us at www.idec.com Programmable Logic Controllers


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    PDF CP11T CP12/13 fc1a-cla PFA-1A54A PF2-CLA PFA-1A51 cable PFA-1A11 PFA-1A51 FC1A-C1A1E relay 12v 220v i/o FC1A-C2A1E relay 12v dc

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


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    PDF BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf

    2sa1943

    Abstract: j4215 sc5200 transistor
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A. High Power Dissipation : 150watts.


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    PDF 2SA1943/FJL4215 150watts. 30MHz. -250V SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 2sa1943 j4215 sc5200 transistor

    j4215

    Abstract: 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


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    PDF 2SA1943/FJL4215 150watts. 30MHz. -250V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943

    j4215

    Abstract: A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


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    PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200

    j4213-o

    Abstract: j4213 a1962 transistor b 1560
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.


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    PDF 2SA1962/FJA4213 130watts 30MHz. -230V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 j4213-o j4213 a1962 transistor b 1560

    j4213-o

    Abstract: j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A High Power Dissipation : 130watts High Frequency : 30MHz.


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    PDF 2SA1962/FJA4213 130watts 30MHz. -250V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 2SA1962/FJA4213 j4213-o j4213 a1962 J4213O J4213R 2SA1962O 2SA1962 2SA1962OTU A1962R FJA4213

    j4213

    Abstract: j4213-o
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = -17A High Power Dissipation : 130watts High Frequency : 30MHz.


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    PDF 2SA1962/FJA4213 130watts 30MHz. -250V SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 j4213 j4213-o

    j4213

    Abstract: j4213-o
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Fequency : 30MHz.


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    PDF 2SA1962/FJA4213 130watts 30MHz. -230V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 j4213 j4213-o

    j4213-o

    Abstract: a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242
    Text: 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.


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    PDF 2SA1962/FJA4213 130watts 30MHz. -230V 2SC5242/FJA4313. 2SA1943/FJL4215 FJP1943 O220F FJPF1943 2SA1962/FJA4213 j4213-o a1962 j4213 a1962o 2SA1962OTU 2SA1962RTU FJP1943 FJPF1943 transistor 2sc5242

    j4215

    Abstract: amplifier design 2sc5200 2sa1943 A1943 2sa1943 2sc5200 audio circuit spice 2sc5200 2sC5200, 2SA1943 spice model 2SC5200 2sa1943 2sa1943 amplifier J4215O
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


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    PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 amplifier design 2sc5200 2sa1943 A1943 2sa1943 2sc5200 audio circuit spice 2sc5200 2sC5200, 2SA1943 spice model 2SC5200 2sa1943 2sa1943 amplifier J4215O

    J37 transistor

    Abstract: No abstract text available
    Text: Quick Start Guide TRK-S12ZVH128 S12 MagniV MCU for Automotive Instrument Cluster Applications Quick Start Guide Get to Know the TRK-S12ZVH128 Potentiometer Enable Potentiometer I2C Header User Buttons SPI Header Power Connector S12ZVH128 MCU Power Switch Stepper Motor


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    PDF TRK-S12ZVH128 S12ZVH128 TWRPI-MMA845xQ TRK-S12ZVH128 S12ZVH128 16-bit com/TRK-S12ZVH128 J37 transistor

    MC9S12ZVMC12

    Abstract: resolver sensor S12ZVML12EVBQSG MC9S12ZVM
    Text: Freescale Semiconductor User's Guide Document Number:MC9S12ZVM128MCBUG Rev 1, 07/2013 S12ZVM12EVB Evaluation Board User Guide Contents 1 Introduction The S12ZVMx12EVB board is designed to drive 3-phase BLDC or PMSM motors, enabling implementation of motor


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    PDF MC9S12ZVM128MCBUG S12ZVM12EVB S12ZVMx12EVB S12ZVM, 16-bit MC9S12ZVMC12 resolver sensor S12ZVML12EVBQSG MC9S12ZVM

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    2SC3183

    Abstract: No abstract text available
    Text: Ordering number: EN 1251A 2 S C 3 1 8 3 No.1251A SAN YO F NPN Triple Diffused Planar Silicon Transistor H i g h - S p e e d S w i t c h i n g Ap p l i c a t i o n s i Features . High breakdown voltage Vq Bq ^900V . High switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C


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    PDF 12B1A 2SC3183 PW-300psfDuty 2SC3183

    J423

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA M J423 H igh-V oltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for m e d iu m -to -h ig h voltage inverters, converters, regulators and


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    PDF MJ423/D O-204AA J423

    MJ413

    Abstract: J413M mj423 motorola WS300
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J413 M J423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for m edium -to-high voltage inverters, converters, regulators and switching circuits. • •


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    PDF MJ413 MJ423 J413M mj423 motorola WS300

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


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    PDF BLW77 28The

    BLW77

    Abstract: neutralization push-pull philips Trimmer 60 pf
    Text: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


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    PDF D0b3277 BLW77 7110flSh 7Z77473 7Z77475 BLW77 neutralization push-pull philips Trimmer 60 pf

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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