BU4508AF
Abstract: transistor BU4508AF
Text: DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor
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BU4508AF
SCA60
135104/150/03/pp12
BU4508AF
transistor BU4508AF
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Untitled
Abstract: No abstract text available
Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A
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-100mA
-10mA
Mar-97
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NEC JAPAN
Abstract: ml marking RF NPN POWER TRANSISTOR 2.5 GHZ 2SC5006 2SC5007
Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (2SC5006, 2SC5007) • Low noise Q1: NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
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PA831TD
2SC5006,
2SC5007)
S21e2
2SC5006
2SC5007
NEC JAPAN
ml marking
RF NPN POWER TRANSISTOR 2.5 GHZ
2SC5006
2SC5007
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how to calculate junction to ambient thermal resistance
Abstract: transistor output current define
Text: Application Note APT-0401 23 March 2004 Determining a Transistor’s Maximum RF Output Power Rating Richard B. Frey, P.E. Senior Applications Engineer Advanced Power Technology 405 SW Columbia St. There is a fairly wide variation between manufacturers in the method used to specify
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APT-0401
how to calculate junction to ambient thermal resistance
transistor output current define
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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NEC 2561A
Abstract: NEC 2561A w 2561A NEC NEC 2561A A nec 2561 2561a PS2561A-1-A NEC 2561A circuit PS2561AL-1 NEC 2561A HK
Text: DATA SHEET PHOTOCOUPLER PS2561A-1,PS2561AL-1,PS2561AL1-1,PS2561AL2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2561A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
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PS2561A-1
PS2561AL-1
PS2561AL1-1
PS2561AL2-1
PS2561AL2-1
NEC 2561A
NEC 2561A w
2561A NEC
NEC 2561A A
nec 2561
2561a
PS2561A-1-A
NEC 2561A circuit
NEC 2561A HK
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TFT MOBILE DISPLAY diagrams
Abstract: LDS314 QVGA TFT 1.8" 262K-COLOR LTPS QCIF LCD Controller S240 color decoder TRANSISTOR 25 TFT LTPS 25 PIN TFT MOBILE DISPLAY
Text: PRODUCT OVERVIEW LDS314 LDS314 240 RGB x 320 262k Color LTPS TFT LCD Driver The LDS314 is a single chip low power 262k Color Low Temperature Polysilicon (LTPS) Thin Film Transistor (TFT) LCD Driver with Integrated Controller for small panel color displays used in next
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LDS314
LDS314
LDS314,
TFT MOBILE DISPLAY diagrams
QVGA TFT 1.8"
262K-COLOR
LTPS
QCIF LCD Controller
S240
color decoder TRANSISTOR
25 TFT LTPS
25 PIN TFT MOBILE DISPLAY
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Untitled
Abstract: No abstract text available
Text: 'J. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-P-N TYPE 2NT19 GROWN JUNCTION SILICON TRANSISTOR 36 to 86 beta spread Specifically designed for bigk gain at Ugh temperatures mechanical data
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2NT19
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FMMT3904TA
Abstract: D1N5817 FFMD914 DC72V LT1162 2kw power supply tp 0401
Text: Final Electrical Specifications LT1681 Dual Transistor Synchronous Forward Controller April 2001 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO High Voltage: Operation Up to 72V Max Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems
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LT1681
350kHz
LT1681,
300kHz
LTC1735
LTC1922-1
LT1929
1681i
FMMT3904TA
D1N5817
FFMD914
DC72V
LT1162
2kw power supply
tp 0401
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HVGA LCD driver
Abstract: lds321 HVGA TFT LCD driver LTPS TFT MOBILE DISPLAY diagrams Sync generator rgb RGB display S320 rgb lcd interface 1.8 tft display
Text: PRODUCT OVERVIEW LDS321 LDS321 320 RGB x 480 262k Color LTPS TFT LCD Driver The LDS321 is a single chip low power 262k Color Low Temperature Polysilicon (LTPS) Thin Film Transistor (TFT) LCD Driver with Integrated Controller for small panel color displays used in next
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LDS321
LDS321
HVGA LCD driver
HVGA TFT LCD driver
LTPS
TFT MOBILE DISPLAY diagrams
Sync generator rgb
RGB display
S320
rgb lcd interface
1.8 tft display
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0A4B
Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
DS00529E-page
0A4B
keypad 4x4 7 segment display
4x4 matrix keypad membrane
4x4 matrix keypad and microcontroller
4X4 HEX KEY PAD
keypad membrane 4X4
LTC3710G
hex keypad
4x4 hex keypad
7 segment display 4x4 keyboard
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4X4 HEX KEY PAD
Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of
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AN529
PIC16C5X
PIC16C5X
4X4 HEX KEY PAD
keypad membrane 4X4
4x4 hex keypad with microcontroller
4x4 hex keypad
hex keypad
4-DIGIT 7-SEGMENT LED DISPLAY
AN529
LTC3710G
061c
065B
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LM134 334
Abstract: 2N4250 LM234 14 pin LM334 LM134H LM234-6 LM134 LM334r LM334 equivalent transistor 1N457 equivalent
Text: LM134 Series Constant Current Source and Temperature Sensor U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO 1µA to 10mA Operation 0.02%/V Regulation 0.8V to 40V Operating Voltage Can be Used as Linear Temperature Sensor Draws No Reverse Current Supplied in Standard Transistor Packages
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LM134
800mV
LM334
2N4250
LT1009
VREF/583
134sc
LM134 334
2N4250
LM234 14 pin
LM334
LM134H
LM234-6
LM334r
LM334 equivalent transistor
1N457 equivalent
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LDS274
Abstract: 23 PIN TFT MOBILE DISPLAY 8bit RGB to 18bit parallel LCD RGB 18 bit 760K G240 8080 rgb interfaces transistor 8080
Text: PRODUCT OVERVIEW LDS274 LDS274 176 RGB x 240 262k Color TFT LCD Driver The LDS274 is a low power single chip 262k Color Thin Film Transistor (TFT) LCD Driver with Integrated Controller for small panel color displays used in next generation wireless handsets and mobile consumer
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LDS274
LDS274
760k-bit
23 PIN TFT MOBILE DISPLAY
8bit RGB to 18bit parallel
LCD RGB 18 bit
760K
G240
8080 rgb interfaces
transistor 8080
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LM334 equivalent transistor
Abstract: LM4250 equivalent
Text: LM134 Series Constant Current Source and Temperature Sensor FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO 1µA to 10mA Operation 0.02%/V Regulation 0.8V to 40V Operating Voltage Can be Used as Linear Temperature Sensor Draws No Reverse Current Supplied in Standard Transistor Packages
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LM134
800mV
2N4250
LM334
10mV/Â
LT1009
VREF/583Â
134sc
LM334 equivalent transistor
LM4250 equivalent
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ff 0401
Abstract: No abstract text available
Text: SGS-THOMSON 2N5657 iW SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR D ESCRIP TIO N The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended tor use output amplitiers, low current, high voltage converters and AC line relays.
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2N5657
OT-32
ff 0401
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MP6501A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MP6501A HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • • The Electrodes are is Isolated from Case. 6 Darlington Transistor Built Into in 1 Package
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MP6501A
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SC5459 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5459 SWITCHING REGULATOR APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS i r a t id m ^ High Speed Switching • High Collector Breakdown Voltage : V q eo = 400V
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2SC5459
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 971 HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V q e = —400V M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage
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2SA1971
250mm2X0
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2SA19
Abstract: 2SA1933 2SC5175
Text: TOSHIBA 2SA1933 2 S A 1 933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : VCE (sat)~ —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^s (Typ.)
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2SA1933
2SC5175
--50V,
2SA19
2SA1933
2SC5175
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Untitled
Abstract: No abstract text available
Text: 2SA1972 TO SH IB A 2 S A 1 972 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e = —400V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2SA1972
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A1942
Abstract: 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 2SC5199
Text: 2SA1942 TO SHIBA 2 S A 1 942 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. E P “ o f
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2SA1942
2SC5199
A1942
80W TRANSISTOR AUDIO AMPLIFIER
2-21F1A
2SA1942
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SD2584 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2584 HIGH POWER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (VcE =3V, IC = 3A) Low Saturation Voltage : V0E(sat) = 15V (Max ) flc = 3A)
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2SD2584
Ta-28
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