TRANSISTOR - NP 100 Search Results

TRANSISTOR - NP 100 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR - NP 100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking NP Abstract: 2SC3837K 2SC4082 2SC4725 2SC5661 SC-75A T106 T146 Text: 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 20V, 50mA, 1.5GHz 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K zExternal dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 (3) 0.13 0to0.1 0.5 0.22 (1) Marking NP AC∗ SMT3 NP AC∗	Original	PDF	2SC5661 2SC4725 2SC4082 2SC3837K 2SC4725 marking NP 2SC3837K SC-75A T106 T146
2sd734 Abstract: 2SB698 512F Text: Ordering number:512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Package Dimensions unit:mm 2003A [2SB698/2SD734] JEDEC : TO-92 EIAJ : SC-43 SANYO : NP : 2SB698 for audio 1W output.	Original	PDF	2SB698/2SD734 2SB698/2SD734] SC-43 2SB698 2sd734 512F
2SC2300 Abstract: 2SC3000 Text: Ordering number:EN866C NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Features Package Dimensions • FBET series. · High fT and small Cre. unit:mm 2003A [2SC3000] B : Base C : Collector E : Emitter SANYO : NP JEDEC : TO-92 EIAJ	Original	PDF	EN866C 2SC3000 2SC3000] SC-43 2SC2300 2SC3000
Untitled Abstract: No abstract text available Text: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications	Original	PDF	EN1334F 2SC3332
Untitled Abstract: No abstract text available Text: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications	Original	PDF	EN1334E 2SC3332
TRANSISTOR D400 Abstract: D400 transistor d400 e nt transistor d400 transistor d400 t f C200-600 s9014 equivalent transistor TO-92 S9015 transistor S9014 Text: S9014 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Application TO- 92 Collector Curre nt Ic=100mA Collector P owe r Dissipa tion P c=450mW Comple men tary to S9015 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value	Original	PDF	S9014 100mA 450mW S9015 200uA TRANSISTOR D400 D400 transistor d400 e nt transistor d400 transistor d400 t f C200-600 s9014 equivalent transistor TO-92 S9015 transistor S9014
D1835 transistor Abstract: TRANSISTOR D1835 Text: Ordering number : EN2158B 2SD1835 Bipolar Transistor 50V, 2A, Low VCE sat , NPN Single NP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage	Original	PDF	EN2158B 2SD1835 D1835 transistor TRANSISTOR D1835
TRANSISTOR D400 Abstract: D400 transistor transistor C200 d400 d400 e nt transistor d400 f S9015 s9014 equivalent s9015 equivalent Text: S9015 P NP EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Applica tion TO- 92 Collector Curre nt Ic=-100mA Collector P owe r Dissipa tion P c=450mW Comple me ntary to S9014 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol	Original	PDF	S9015 -100mA 450mW S9014 TRANSISTOR D400 D400 transistor transistor C200 d400 d400 e nt transistor d400 f S9015 s9014 equivalent s9015 equivalent
2N696 Abstract: No abstract text available Text: 2N696 NPN Transistor 3.50 Transistors Bipolar Silicon NPN Low-Power Transistors Am. Page 1 of 1 Enter Your Part # Home Part Number: 2N696 Online Store 2N696 Diodes NP N T rans is to r Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	PDF	2N696 2N696 com/2n696
GMA14 Abstract: No abstract text available Text: ISSUED DATE :2001/10/04 REVISED DATE :2006/05/10C G M A1 4 NP N E PITAX I AL PLANAR T RANSI STOR Description The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-89 Millimeter	Original	PDF	2006/05/10C GMA14 OT-89 GMA14
Untitled Abstract: No abstract text available Text: WEITRON KTC1027 NP N Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) value Units VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO Parameter Symbol Collector-Base Voltage	Original	PDF	KTC1027 O-92L 100mA 19-Jul-2012 O-92L 270TYP
GMBTA13 Abstract: No abstract text available Text: CORPORATION G M BTA1 3 ISSUED DATE :2003/07/15 REVISED DATE :2006/05/09B NP N E PITAX I AL S ILI CO N T RANSI STOR Description The GMBTA13 is designed for Darlington Amplifier Transistor. Features High D.C. Current Gain Collector-Emitter Voltage VCES=30V	Original	PDF	2006/05/09B GMBTA13
GMBTA14 Abstract: No abstract text available Text: CORPORATION G M BTA1 4 ISSUED DATE :2002/02/11 REVISED DATE :2006/05/09B NP N E PITAX I AL S ILI CO N T RANSI STOR Description The GMBTA14 is designed for Darlington Amplifier Transistor. Features High D.C. Current Gain Collector-Emitter Voltage VCES=30V	Original	PDF	2006/05/09B GMBTA14
transistor 115 Abstract: 2N5879 Text: 2N5879 60 V - Complementary PNP Selicon High-power Transistor 1.15. 1 of 1 Home Part Number: 2N5879 Online Store 2N5879 Diodes 6 0 V - C o m plem e ntary P NP Selic o n High- po w er Tra ns is to r	Original	PDF	2N5879 com/2n5879 2N5879 transistor 115

PN2222 EQUIVALENT Abstract: Transistor Text: SAMSUNG SEM ICONDUCTOR INC MPS2222 LME 0 QÛ?3 0 b D M J jx NPÑ EPITAXIAL SIUCOÑ TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-EmlttarVoltage: Vc£O=30V • Collector Dlsalpatlon: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=250C) Characteristic Collector-Base \foltage	OCR Scan	PDF	MPS2222 625mW PN2222 EQUIVALENT Transistor
2SA1882 Abstract: 2SC4984 A1882 5SA18 Text: Ordering number: EN4633 2SA1882/2SC4984 No.4633 PNP/NPÑ Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications I A pplications • Low-frequency power amp applications. • Medium-speed switching. • Small-sized motor drivers.	OCR Scan	PDF	EN4633 A1882/2SC4984 2SA1882 2SC4984 A1882 5SA18
JE205 Abstract: MJE105 k 351 transistor TO-225AB JE-20 to225ab MJE205 Text: MOTORO LA SC XSTRS/R F 12E D I b3L>7554 0005305 3 \| r-3 3 -u MOTOROLA SEMICONDUCTOR MJE105 TECHNICAL DATA MI D 5 AM PERE 1>NP SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON output device in complementary audio amplifiers . w p 6 ^ $ 3 p t t s music power per channel.	OCR Scan	PDF	MJE105 JE205 JE205 MJE105 k 351 transistor TO-225AB JE-20 to225ab MJE205
IC555 Abstract: IC-555 2SC4172 NP254 Text: Ordering num ber: EN 2546A I _ 2 S C 4 1 7 2 Np, 254.QA NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features . High breakdown voltage VCb q ^800V . Fast switching speed . Wide ASO . Suitable for sets whose height is restricted	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: HR DATA HIGH VOLTAGE SILICON BU 536 POWER S«ITCHING TO-3 NP« SHEET 8A; TRANSISTOR 75« SWITCH MODE CTV POWER SUPPLY APPLICATION ABSOLUTE MAXIMUM RATINGS ; Ta=25deg C SVHBÖL VALUE UNIT Collector Emitter Voltage VCES 1100 V Collector Emitter (sus) Voltage	OCR Scan	PDF	25deg VCE4100V, case-125 AZ240194PG/V/NK
transistor bc 100 Abstract: BC215 BC 215 Text: BC 215 B NP SILICON TRANSISTOR, EP ITAXIAL PLANAR RANSISTOR PNP SILIC IU M , PLAN A R E P IT A X IA L ha PNP planar épitaxial BC 215 B is intended ar général purpose ? transistor PNP planar BC 215 B est destiné aux •âges généraux CD >° -5 0 V —500 mA	OCR Scan	PDF
2SA1080 Abstract: No abstract text available Text: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are	OCR Scan	PDF	2SA1080 O-Z20 2SA1080
BC347 Abstract: No abstract text available Text: SynSEM i T O -92 Plastic Encapsulate Transistors 5YN5EMI SEM ICONDUCTOR BC347 FEATURE TRANSISTOR NP N TO — 92 S oo^ Power dissipation PCM : 1.EMITTER 0.3 W (Tamb=25 °C) Collector current ICM 0. 1 A 2. BASE Collector base voltage 3. COLLECTOR V(b r )cbo	OCR Scan	PDF	BC347 270TYP BC347
3N74 Abstract: No abstract text available Text: , v»' i ; t ’ . '"•".'Vi' "' '^’■ ’'■fo«3•./<,.'■«'<,’».i»''•ïf , - 1 • -''. =i• : T i '- - À i - i , - ‘' . O » \ i o NP N SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR • • • • _ LOW LEAKAGE LOW Celì	OCR Scan	PDF	w/74/76/ 3Nn7/78/ 74-ie> 71-7-32C-11W 3N74
2N1652 Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power Text: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de	OCR Scan	PDF	MIL-S-19500/219A mil-S-19500/219 2N1651, 2N1652, 2N1653 Ic-25A 2N1652 2N1653 MIL-STD-780 2N1651 Germanium power

TRANSISTOR - NP 100 Search Results

TRANSISTOR - NP 100 Result Highlights (5)

TRANSISTOR - NP 100 Datasheets Context Search

marking NP

2sd734

2SC2300

Untitled

Untitled

TRANSISTOR D400

D1835 transistor

TRANSISTOR D400

2N696

GMA14

Untitled

GMBTA13

GMBTA14

transistor 115

PN2222 EQUIVALENT

2SA1882

JE205

IC555

Untitled

transistor bc 100

2SA1080

BC347

3N74

2N1652