k2991
Abstract: 2SK2991 k299
Text: 2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2991 DC−DC Converter Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.)
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Abstract: No abstract text available
Text: 2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2991 DC−DC Converter Relay Drive and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance
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Abstract: 2SK2991
Text: 2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2991 DC−DC Converter Relay Drive and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance
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Abstract: K2991 tr k2991
Text: 2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2991 DC−DC Converter Relay Drive and Motor Drive Applications z z z z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance
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Abstract: 2SK2991
Text: 2SK2991 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2991 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0S (標準)
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2SK2991
10VID
2-10S1B
VDD400V,
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