fet array
Abstract: E 212 fet PHN708 SC13 SSOP24 MDA790 SSOP24 209
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN708 7 N-channel 80 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification
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PHN708
OT340-1
SSOP24)
SCA57
135108/00/03/pp12
fet array
E 212 fet
PHN708
SC13
SSOP24
MDA790
SSOP24 209
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mda801
Abstract: MDA804 MDA800 MDA806 PHN405 SC13 SSOP16 MDA802 MDA803 1g28
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN405 4 N-channel 60 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification
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PHN405
OT338-1
SSOP16)
SCA57
135108/00/03/pp12
mda801
MDA804
MDA800
MDA806
PHN405
SC13
SSOP16
MDA802
MDA803
1g28
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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TSP 817
Abstract: BUK9830-30 PHT6N03LT
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor
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PHT6N03LT
SC13a
OT223
SCA56
137087/600/02/pp11
TSP 817
BUK9830-30
PHT6N03LT
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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PHC2300
Abstract: el 1533 P-Channel Enhancement FET MAM118
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHC2300 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 24 Philips Semiconductors Product specification Complementary enhancement mode
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PHC2300
SC13b
OT96-1
SCA55
137107/1200/02/pp16
PHC2300
el 1533
P-Channel Enhancement FET
MAM118
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TDA5242
Abstract: FETs Field Effect Transistors TDF5242T back-emf ICS 1210 Pressure Sensor
Text: INTEGRATED CIRCUITS DATA SHEET TDF5242T Brushless DC motor drive circuit Preliminary specification Supersedes data of 1997 Apr 23 File under Integrated Circuits, IC11 1997 Sep 12 Philips Semiconductors Preliminary specification Brushless DC motor drive circuit
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TDF5242T
TDF5242T
driving31
SCA55
297027/1200/02/pp20
TDA5242
FETs Field Effect Transistors
back-emf
ICS 1210 Pressure Sensor
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intel 845 MOTHERBOARD pcb CIRCUIT diagram
Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL128/D
Mar-2002
r14525
DL128
intel 845 MOTHERBOARD pcb CIRCUIT diagram
200D6 SMD DIP-8
marking code E5 SMD ic sot23-5
4256 bwp
TRANSISTOR SMD 6CW
TL494 car charger schematic diagram
SMD 6cw
LM385 1.25V zener
6cw smd code marking
mc7812a
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2SK2134
Abstract: 2SK2134-Z MEI-1202 MP-25 TEA-1035 NEC 2sk2134
Text: DATA SHEET à NEC MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2134, 2SK2134-Z are N-channel Pow er M O S Field Effect U nit : m m Transistors designed for high voltage switching applications.
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2SK2134
2SK2134-Z
2SK2134,
IEI-1209)
MEI-1202
MP-25
TEA-1035
NEC 2sk2134
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2SK2134-Z
Abstract: 2SK2134 MEI-1202 MP-25 TEA-1035 tea 1402
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET à NEC MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET
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2SK2134
2SK2134-Z
2SK2134,
2SK2134-Z
IEI-1209)
MEI-1202
MP-25
TEA-1035
tea 1402
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NEC k 2134
Abstract: 2sk2134
Text: DATA SHEET NEC 1 ,f A MOS FIELD EFFECT POWER TRANSISTORS 2SK2134, 2SK2134-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2134, 2SK2134-Z are N-channel Pow er M O S Field Effect Unit : m m Transistors designed fo r high voltage switching applications.
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2SK2134,
2SK2134-Z
2SK2134-Z
2SK2134
NEC k 2134
2sk2134
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S InlEET PHN708 7 N-channel 80 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS
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PHN708
SSOP24)
135108/00/03/pp12
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|
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diode AR S1 99
Abstract: diode AR s1 56
Text: DISC RETE S E M IC O N D U C TO R S InlEET PHN405 4 N-channel 60 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS
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PHN405
OT338-1
SSOP16)
135108/00/03/pp12
diode AR S1 99
diode AR s1 56
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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TC-799
Abstract: NEC 2sk2134 nec 2134 2sk2134
Text: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.
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2SK2134,
2SK2134-Z
2SK2134-Z
IEI-1209)
2134-Z
TC-799
NEC 2sk2134
nec 2134
2sk2134
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NE5534 replacement
Abstract: k 2134 SSM2013 ssm ad tr fet K 2134 sy 200 SSM2134 SSM2015 riaa
Text: PMI SSM-2134 A * 5“^ S f t e LOW NOISE AUDIO OPERATIONAL AMPLIFIER ^ P re c is io n M onolith ic*» Inc. FEATURES GENERAL DESCRIPTION • Very Low Input Noise Voltage. 3.5nV/ -/H z Typ • Wide Small-Signal B andw idth. 10MHz Typ
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SSM-2134
10MHz
10VRMS
600S2
200kHz
00V/mV
5534AN
SSM-2134
-80dB
NE5534 replacement
k 2134
SSM2013
ssm ad
tr fet K 2134
sy 200
SSM2134
SSM2015 riaa
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Untitled
Abstract: No abstract text available
Text: IN TE G R A TE D C lR C U fT S TD F5242T Brushless DC motor drive circuit Preliminary specification File under Integrated Circuits, IC11 Philips Semiconductors 1997 Apr 23 P H IL IP S PHILIPS P h ilip s S e m ic o n d u c t o r s P re lim in a ry s p e c if ic a t io n
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F5242T
TDF5242T
SCA54
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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4107S
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS [M m SM EET Ê-.; jiv: ”jn d j U ni BUS TEA0679T l2C-bus controlled dual Dolby* B-type noise reduction circuit for playback applications Product specification Supersedes data of 1998 Jun 24 File under Integrated Circuits, IC01 Philips
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TEA0679T
02/750/02/pp40
4107S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package
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TIM1213-4
MW50220196
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Untitled
Abstract: No abstract text available
Text: / T u i m TECHNOLOGY Gain Bandwidth Product, Av = +1 Slew Rate Low Cost Output Current Settling Time Differential Gain Error Differential Phase Error High Open Loop Gain Single Supply +5V Operation Output Shutdown flP P llC flT IO n S • ■ ■ ■ ■ Ultra High Speed
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LT1190
50MHz
50V/ns
140ns
LT1190
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