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    TR/TRANSISTOR WMV Search Results

    TR/TRANSISTOR WMV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TR/TRANSISTOR WMV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


    Original     		PDF

    arm cortex a9

    Abstract: RMII PHY H.264 codec rgb led 16X32 encoder h.264 CMOS Sensor 1080p H.264 60 Tablets DIAGRAM SPEAR13 how to flash an android media "ARM Cortex A9"
    Text: SPEAr1340 Dual-core Cortex A9 HMI embedded MPU Datasheet − preliminary data Features • CPU subsystem: – 2x ARM Cortex A9 cores, up to 600 MHz – 32+32 KB L1 caches per core, with parity check – Shared 512 KB L2 cache – Accelerator coherence port ACP


    Original     		PDF SPEAr1340 DDR3-1066, DDR2-800) 16-/32-bit, arm cortex a9 RMII PHY H.264 codec rgb led 16X32 encoder h.264 CMOS Sensor 1080p H.264 60 Tablets DIAGRAM SPEAR13 how to flash an android media "ARM Cortex A9"

    Untitled

    Abstract: No abstract text available
    Text: SPEAr1340 Dual-core Cortex A9 HMI embedded MPU Datasheet − preliminary data Features • CPU subsystem: – 2x ARM Cortex A9 cores, up to 600 MHz – 32+32 KB L1 caches per core, with parity check – Shared 512 KB L2 cache – Accelerator coherence port ACP


    Original     		PDF SPEAr1340 DDR3-1066, DDR2-1066 533MHz) 16-/32-bit,

    H.264 encoder cortex a8

    Abstract: arm cortex a9 cortex-a9 CMOS Sensor 1080p H.264 60 android mobile MOTHERBOARD CIRCUIT diagram 667 transistor ecb CHINA TV uoc ARm cortexA9 GPIO android mobile circuit diagram "ARM Cortex A9"
    Text: SPEAr1340 Dual-core Cortex A9 HMI embedded MPU Datasheet − preliminary data Features • CPU subsystem: – 2x ARM Cortex A9 cores, up to 600 MHz – 32+32 KB L1 caches per core, with parity check – Shared 512 KB L2 cache – Accelerator coherence port ACP


    Original     		PDF SPEAr1340 DDR3-1066, DDR2-1066 533MHz) 16-/32-bit, H.264 encoder cortex a8 arm cortex a9 cortex-a9 CMOS Sensor 1080p H.264 60 android mobile MOTHERBOARD CIRCUIT diagram 667 transistor ecb CHINA TV uoc ARm cortexA9 GPIO android mobile circuit diagram "ARM Cortex A9"

    arm cortex a9

    Abstract: H.264 encoder cortex a8 "ARM Cortex A9" cmos digital camera module MMC 4.2 "NOR Flash controller" H.264 codec PD46 Dual-core ARM Cortex-A9 CPU cortex-a9
    Text: SPEAr1340 Dual-core Cortex A9 HMI embedded MPU Datasheet − production data Features • CPU subsystem: – 2x ARM Cortex A9 cores, up to 600 MHz – 32+32 KB L1 caches per core, with parity check – Shared 512 KB L2 cache – Accelerator coherence port ACP


    Original     		PDF SPEAr1340 DDR3-1066, DDR2-1066 533MHz) 16-/32-bit, arm cortex a9 H.264 encoder cortex a8 "ARM Cortex A9" cmos digital camera module MMC 4.2 "NOR Flash controller" H.264 codec PD46 Dual-core ARM Cortex-A9 CPU cortex-a9

    PowerVR SGX530

    Abstract: transistor a1023 IR sensor LFN MUSBMHDRC inic 1607 SCT 735 1015 0545 RTL 2832 upd1514 transistor A1023 y sgx5
    Text: TMS320DM814x DaVinci Digital Media Processors Technical Reference Manual Literature Number: SPRUGZ8 February 2011 2 SPRUGZ8 – February 2011 Submit Documentation Feedback 2011, Texas Instruments Incorporated Contents . 77


    Original     		PDF TMS320DM814x PowerVR SGX530 transistor a1023 IR sensor LFN MUSBMHDRC inic 1607 SCT 735 1015 0545 RTL 2832 upd1514 transistor A1023 y sgx5

    SPRS197

    Abstract: CP15 OMAP5910 TMS320 XDS510 d856 D982 compaq c700 AMD 7850
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197 August 2002 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to


    Original     		PDF OMAP5910 SPRS197 S-PBGA-N289) 4173512-6/D OMAP5910 289-Ball SPRS197 CP15 TMS320 XDS510 d856 D982 compaq c700 AMD 7850

    d998 transistor

    Abstract: DP 704c transistor D998 D880 TRANSISTOR d998 TRANSISTOR pin config wireless cam 208c d998 D986 TRANSISTOR transistor D896 D880
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197 August 2002 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to


    Original     		PDF OMAP5910 SPRS197 S-PBGA-N289) 4173512-6/D OMAP5910 289-Ball d998 transistor DP 704c transistor D998 D880 TRANSISTOR d998 TRANSISTOR pin config wireless cam 208c d998 D986 TRANSISTOR transistor D896 D880

    d998 transistor

    Abstract: D880 TRANSISTOR D880 transistor D998 D986 d998 D998 TRANSISTOR datasheet D894 D880 y transistor d886
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197A August 2002 – Revised April 2003 PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to


    Original     		PDF OMAP5910 SPRS197A S-PBGA-N289) 4204662/A OMAP5910 289-Ball d998 transistor D880 TRANSISTOR D880 transistor D998 D986 d998 D998 TRANSISTOR datasheet D894 D880 y transistor d886

    2N539

    Abstract: 2N539A mil-std-750 3076 Germanium power
    Text: M IL -S-19500/38C 10 January 1969 SUPERSEDING MIL- S -19500/38B 31 January 1962 See 6 .3 . MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER T V P R S 9.NR3Q A N n 2N 5SQ A This specification is mandatory for use by all Depart­


    OCR Scan     		PDF MIL-S-19500/38C MIL-S-19500/38B 2N539 2N539A mil-s-19500, 2N539A mil-std-750 3076 Germanium power

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2549 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2549 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1.6MAX. • -•1-0.4 + 0.05


    OCR Scan     		PDF 2SK2549 200//A)

    1D500A-030

    Abstract: No abstract text available
    Text: 1D500A-030 500A L -;U Ä ± / < 7 — :E ÿ a - l£ f JV ! Outline D rawings POWER TRANSISTOR MODULE 14 U 22.5 : F e a tu re s • High Current • hFE High DC Current Gain • im m m Non Insulated Type ‘ Applications High Power Sw itching •M&WWM&W • DC * —fU ffl


    OCR Scan     		PDF 1D500A-030 1D500A-030

    2N1195

    Abstract: pnp germanium transistor TRANSISTOR SUBSTITUTION
    Text: MIL-S-19500/71D 29 June_1067 SU PER SED IN G M IL -S -195 00/71C 17 January 1961 See 6.3 M IL IT A R Y SPEC IFIC A T IO N SEM ICOND UCTO R D E V IC E , TRAN SISTO R, PN P , G ERM AN IU M , LO W -PO W ER T Y P E 2N1135 This specification is mandatory for use by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/71D MIL-S-19500/71C 2N1195 MIL-S-19500 MIL-S-19500/71C. 2N1195 pnp germanium transistor TRANSISTOR SUBSTITUTION

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
    Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­


    OCR Scan     		PDF LB20-2 2N2369 AVALANCHE PULSE GENERATOR 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918

    Untitled

    Abstract: No abstract text available
    Text: um TECHNOLO G Y LT1361/LT1362 D ual and Q uad 50MHz, 8 0 0 V / jlls O p Am ps F€ßTUft€S DCSCftlOTIOn • 50MHz Gain-Bandwidth ■ 800V/|xs Slew Rate ■ 5mA Maximum Supply Current per Amplifier The LT1361/LT1362 are dual and quad low power high speed operational amplifiers with outstanding AC and DC


    OCR Scan     		PDF LT1361/LT1362 50MHz, 50MHz LT1361/LT1362 LT1362 2/100fl 119mW 119mW) 00Dtm LT1361/LT

    H13-0547-5

    Abstract: H19P0546 h14p0546-5 ic 546 transistor bc 548 AN520 AN521 HI-546 HI-547 HI-548
    Text: HI-546, HI-547, HI-548, HI-549 D a ta s h e e t Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection June 1999 File Num ber 3150.2 Features • Analog Overvoltage Protection. 70Vp_p


    OCR Scan     		PDF HI-546, H1-547, HI-548, HI-549 HI-547, HI-548 HI-549 1-800-4-HARRIS H13-0547-5 H19P0546 h14p0546-5 ic 546 transistor bc 548 AN520 AN521 HI-546 HI-547

    STK 4133 II

    Abstract: STK 4133 LC7522 STK 419 140 C752 TRANSISTOR LA3607 LC7060 STK 419 130 LC6502 stk 4133 equivalent
    Text: O rdering num ber: EN 4375 □ ThtcK-flfm Hybrid mregiraTed cifcun H ie STK301 -020 No. 4375 SA'WO 7-band, 2-channel Electronic Graphic Equalizer i |i; ' Overview Package Dimen$ipìn$ The STK301-020 is a hybrid IC (H3C) for electronically controlled graphic equalizer applications and is equipped with


    OCR Scan     		PDF EN4375 STK301 STK30J-020 STK301-020 600Q-Vq STK301-020 STK 4133 II STK 4133 LC7522 STK 419 140 C752 TRANSISTOR LA3607 LC7060 STK 419 130 LC6502 stk 4133 equivalent

    Transistors wmv 02

    Abstract: TLE2426 TLV2324 TLV2334 TLV2334ID TLV2334Y TLV2344
    Text: TLV2334I, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER QUAD OPERATIONAL AMPLIFIERS _ • W id e R ange o f S u p p ly Voltages O ver Specified T em perature Range: T a = - 4 0 ° C to 85°C . . . 2 V to 8 V SLO S113 - MAY 1992


    OCR Scan     		PDF TLV2334I, TLV2334Y SLOS113 TLV2344 TLV2324 SLOS113- Transistors wmv 02 TLE2426 TLV2334 TLV2334ID

    TLC 771

    Abstract: TRANSISTOR D 2627
    Text: TLC27L2, TLC27L2A, TLC27L2B, TLC27L7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOSQ52B - OCTOBER 1987 - REVISED AUGUST 1994 Trimmed Offset Voltage: TLC27L7 . . . 500 nV Max at 25°C, VDD = 5 V D, JG, OR P PACKAGE TOP VIEW Input O ffset Voltage D r ift. . . Typically


    OCR Scan     		PDF TLC27L2, TLC27L2A, TLC27L2B, TLC27L7 SLOSQ52B TLC27L7 1bl724 TLC 771 TRANSISTOR D 2627

    IFR-GDC40PW

    Abstract: No abstract text available
    Text: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE


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    equivalent transistor c 5888

    Abstract: TLV2341 TLV2341IDR TLV2341IPWLE TLV2341Y TLV2342 Ultrasonic generator schematic circuit fl 407
    Text: TLV2341, TLV2341Y LinCMOS PROGRAMMABLE LOW-VOLTAGE OPERATIONAL AMPLIFIERS S LO S 1 1Q A -M A Y 1992 - REVISED A U G U S T 1994 Wide Range of Supply Voltages Over Specified Temperature Range: Ta = -40°C to 85°C . . . 2 V to 8 V Fully Characterized at 3 V and 5 V


    OCR Scan     		PDF TLV2341, TLV2341Y VDD-1Vat25Â SLOS110A equivalent transistor c 5888 TLV2341 TLV2341IDR TLV2341IPWLE TLV2342 Ultrasonic generator schematic circuit fl 407

    ScansUX30

    Abstract: No abstract text available
    Text: u r m _ TECHNOLOGY_ INDFX JIMUbX SECTION 2—AM PLIFIERS PRECISION OPERATIONAL AMPLIFIERS L T 1 3 6 6 / L T 1 3 6 7 / L T 1 3 B 8 / L T 1 3 B 9 , D u a l a n d Q u a d P re c isio n R a il-to -R a il Inp u t a n d O u tp u t O p A m p s .2-14


    OCR Scan     		PDF T1366A- T13B7/L T13B8/L T13B9, LT1366/LT LT1368/LT 150jliV 375joA 400kHz Ra70nV ScansUX30

    transistor A726 pnp

    Abstract: UA726 transistor equivalent book FOR A 1941 transistor A726 uA726 equivalent PM 8058 error budget analysis incircuit using op amp AD77xx-series SOT-23 vhz 463 vacuum tube amplifier
    Text: Op Amp Applications Seminar W orldw ide H eadquarters One Technology Way 3000 P.O. Box 9106 Norw ood, MA 02062-9106 U.S.A. 1000 Tel: 781 329 4700, 1 800 262 5643, U.S.A. only 300 Fax: 781 326 8703 AD811 100 AD817 Japan H eadquarters New Pier Takeshiba South Tower Building


    OCR Scan     		PDF AD811 AD817 OP482 AD712, OP249 AD624 AD625 AD526 transistor A726 pnp UA726 transistor equivalent book FOR A 1941 transistor A726 uA726 equivalent PM 8058 error budget analysis incircuit using op amp AD77xx-series SOT-23 vhz 463 vacuum tube amplifier

    TLC27M91

    Abstract: 709 operational amplifier negative temperature coefficient devices 1n4148 TLC27M41 TLC27M41n TLC27M4 TLC27M4A TLC27M4B TLC27M4Y TLC27M9
    Text: TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOSÛ93B - OCTOBER 1987 - REVISED AUGUST 1994 1 • • • • • • • • • • D, J, N, OR PW PACKAGE TOP VIEW Trimmed Offset Voltage: TLC27M9 . . . 900 nV Max at TA = 25°C,


    OCR Scan     		PDF TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9 SLOS093B DlQb73Q TLC27M91 709 operational amplifier negative temperature coefficient devices 1n4148 TLC27M41 TLC27M41n TLC27M4 TLC27M4A TLC27M4B TLC27M4Y TLC27M9