PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
Abstract: BUX53
Text: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier *tot W * V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)
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Tpu76
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
BUX53
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2N2243
Abstract: H21E 2N3439 pnp case to-39
Text: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15
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BC 641
Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76
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BU 647
Abstract: 182T2 185t2 BU143 181T2 BUY69 ESM 182 BU 109 BU104
Text: CB 19 Power transistors N PN <: Triple diffused » Fast switching Transistors de puissance N P N <r Triple diffusés » Commutation rapide Ptnt *V C E X 'c B o itie r <W| V C EO (V) <A) h21E min max t '<A) ° VCE (V) CO < Case O < Type Tcasc 25 °C max *T
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TPu76
BU 647
182T2
185t2
BU143
181T2
BUY69
ESM 182
BU 109
BU104
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LS 2822
Abstract: IC 2816 2N2818 2N1209
Text: {CB 69 CB 70) Power transistors N PN k Triple Diffused » Military applications Transistors de puissance N P N « Triple diffusés » Applications militaires Type Case Boîtier Ptot (Wl * VCEX VCEO (V) *C (A) h21E ° min max l ' (A) ^ ca se^ S C v C Esat/IC M b
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TPu76
LS 2822
IC 2816
2N2818
2N1209
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