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    TPCP8 Price and Stock

    Toshiba America Electronic Components TPCP8107,LF

    MOSFET P-CH 40V 8A PS-8
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    DigiKey TPCP8107,LF Digi-Reel 5,205 1
    • 1 $0.83
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    • 1000 $0.27871
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    TPCP8107,LF Cut Tape 5,205 1
    • 1 $0.83
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    Mouser Electronics TPCP8107,LF 30,064
    • 1 $0.79
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    • 100 $0.423
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    Toshiba America Electronic Components TPCP8011,LF

    PB-F POWER MOSFET TRANSISTOR PS-
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    DigiKey TPCP8011,LF Digi-Reel 2,752 1
    • 1 $1.25
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    TPCP8011,LF Cut Tape 2,752 1
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    Mouser Electronics TPCP8011,LF 1,951
    • 1 $1.02
    • 10 $0.833
    • 100 $0.649
    • 1000 $0.448
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    Toshiba America Electronic Components TPCP8407,LF

    MOSFET N/P-CH 40V 5A/4A PS-8
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    DigiKey TPCP8407,LF Digi-Reel 1,731 1
    • 1 $0.84
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    • 1000 $0.28375
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    TPCP8407,LF Cut Tape 1,731 1
    • 1 $0.84
    • 10 $0.567
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    Mouser Electronics TPCP8407,LF 3,002
    • 1 $0.69
    • 10 $0.599
    • 100 $0.415
    • 1000 $0.295
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    Toshiba America Electronic Components TPCP8004(TE85L,F)

    MOSFET N-CH 30V 8.3A PS-8
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    DigiKey TPCP8004(TE85L,F) Reel
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    TPCP8004(TE85L,F) Digi-Reel 1
    • 1 $0.87
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    TPCP8004(TE85L,F) Cut Tape
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    Quest Components TPCP8004(TE85L,F) 9,600
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    Hirose Electric Co Ltd RM15WTP-CP(8)(71)

    CONN CAB CLAMP INT SZ15 SIL M16
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    Find more TPCP8 price and stock on Findchips.com

    TPCP8 Datasheets (107)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCP8001-H Toshiba MOSFET TPC Series Original PDF
    TPCP8001-H Toshiba MOSFETs - Nch VDSS=30V; ; Package: PS-8; Number Of Pins: 8; Application Scope: mobile; R DS On (max 0.025) (max 0.016); I_S (A): (max 7.2) Original PDF
    TPCP8001-HTE85LF Toshiba TPCP8001 - Trans MOSFET N-CH 30V 7.2A 8-Pin SOP Advanced T/R Original PDF
    TPCP8001-H(TE85LFM Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 7.2A PS-8 Original PDF
    TPCP8002 Toshiba Field Effect Transistor Silicon N-Channel MOS Type Original PDF
    TPCP8003-H Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) Original PDF
    TPCP8003-H(TE85L,F Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 2.2A PS-8 Original PDF
    TPCP8004 Toshiba Transistors - Mosfets Original PDF
    TPCP8004 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCP8004 Toshiba TPCP8004 - TRANSISTOR 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3V1K, 8 PIN, FET General Purpose Small Signal Original PDF
    TPCP8004(TE85L,F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8.3A PS-8 Original PDF
    TPCP8005-H Toshiba TPCP8005 - TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3V1K, 8 PIN, FET General Purpose Small Signal Original PDF
    TPCP8005-H(TE85L,F Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A PS-8 Original PDF
    TPCP8006 Toshiba Transistors - Mosfets Original PDF
    TPCP8006 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCP8006 Toshiba TPCP8006 - TRANSISTOR 9100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3V1K, 8 PIN, FET General Purpose Small Signal Original PDF
    TPCP8007-H Toshiba Transistors - Mosfets Original PDF
    TPCP8007-H Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCP8009 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCP8009 Toshiba Transistors - Mosfets Original PDF

    TPCP8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPCP8105

    Abstract: No abstract text available
    Text: TPCP8105 MOSFETs Silicon P-Channel MOS U-MOS TPCP8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCP8105 TPCP8105

    Untitled

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for


    Original     		PDF TPCP8F01

    Untitled

    Abstract: No abstract text available
    Text: TPCP8305 MOSFETs Silicon P-Channel MOS U-MOS TPCP8305 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCP8305

    Untitled

    Abstract: No abstract text available
    Text: TPCP8604 東芝トランジスタ シリコンPNP三重拡散形 TPCP8604 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 0.33±0.05 0.05 M A 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧 VCBO −400


    Original     		PDF TPCP8604 645mm2 645mm2) 645mm2 100ms

    TPCP8001-H

    Abstract: 8001H TOSHIBA
    Text: TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCP8001-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • High speed switching 5 0.475 1 4 B 0.05 M B


    Original     		PDF TPCP8001-H TPCP8001-H 8001H TOSHIBA

    TPCP8603

    Abstract: No abstract text available
    Text: TPCP8603 東芝トランジスタ シリコンPNPエピタキシャル形 TPCP8603 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm ○ ストロボフラッシュ用 0.33±0.05 0.05 M A コレクタ・エミッタ間飽和電圧が低い。:VCE sat = −0.2 V (最大)


    Original     		PDF TPCP8603 645mm2 645mm2) 100ms* TPCP8603

    TPCP8504

    Abstract: No abstract text available
    Text: TPCP8504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8504 High Speed Switching Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 High DC current gain : hFE = 400 to 1000 IC = 0.2 A Low collector-emitter saturation : VCE (sat) = 0.12 V (max)


    Original     		PDF TPCP8504 TPCP8504

    TPCP8008-H

    Abstract: No abstract text available
    Text: TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching


    Original     		PDF TPCP8008-H TPCP8008-H

    Untitled

    Abstract: No abstract text available
    Text: TPCP8305 MOSFET シリコンPチャネルMOS形 U-MOS TPCP8305 1. 用途 • リチウムイオン2次電池用 • パワーマネージメントスイッチ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) オン抵抗が低い。: RDS(ON) = 23 mΩ (標準) (VGS = -4.5 V)


    Original     		PDF TPCP8305

    TPCP8302

    Abstract: No abstract text available
    Text: TPCP8302 東芝電界効果トランジスタ シリコンPチャネルMOS形 U－MOSⅣ TPCP8302 ○ リチウムイオン 2 次電池用 単位: mm ○ ノートブック PC 用 0.33±0.05 0.05 M A ○ 携帯電子機器用 5 • 鉛フリー対応品(内部接続含む)。


    Original     		PDF TPCP8302 20070701-JA TPCP8302

    8J01

    Abstract: TPCP8J01
    Text: TPCP8J01 シリコンPチャネルMOS形 U-MOSIV /シリコンNPNエピタキシャル形 東芝複合デバイス TPCP8J01 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm 0.33±0.05 0.05 M A 鉛フリー対応品(内部接続含む)。


    Original     		PDF TPCP8J01 20070701-JA 8J01 TPCP8J01

    TPCP8004

    Abstract: Transistor MJ 8004
    Text: TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCP8004 Notebook PC Applications Unit: mm Portable Equipment Applications 0.33 ± 0.05 0.05 Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.)


    Original     		PDF TPCP8004 TPCP8004 Transistor MJ 8004

    TH58NVG5

    Abstract: TC58NVG4 TC58DVM92A5TA00 TH58NVG6 SSM3J307T TC58DVG02A5BAJ5 mp1484 TC58NVG3S TH58NVG5S2EBA20 SSM6J409TU
    Text: 11 eye 東芝半導体情報誌アイ 2008 年 11 月号 Volume 195 CONTENTS 新製品情報 MOSゲートドライバ用バイポーラトランジスタ HN4B102J / TPC6901A / TPC6902 / TPCP8902 2 携帯機器向けロードスイッチ用 Pch MOSFET 3


    Original     		PDF HN4B102J TPC6901A TPC6902 TPCP8902 500mA/div. TH58NVG5 TC58NVG4 TC58DVM92A5TA00 TH58NVG6 SSM3J307T TC58DVG02A5BAJ5 mp1484 TC58NVG3S TH58NVG5S2EBA20 SSM6J409TU

    TPCP8602

    Abstract: 8602
    Text: TPCP8602 東芝トランジスタ シリコンPNPエピタキシャル形 TPCP8602 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm 0.33±0.05 0.05 M A • コレクタ･エミッタ間飽和電圧が低い。


    Original     		PDF TPCP8602 TPCP8602 8602

    TPCP8F01

    Abstract: No abstract text available
    Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive


    Original     		PDF TPCP8F01 TPCP8F01

    8J01

    Abstract: TPCP8J01
    Text: TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type U-MOSIV /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications 0.33±0.05 0.05 M A 5 8 0.475 1 4 B 0.65 2.9±0.1 2.8±0.1 Lead(Pb)-Free Small mounting area due to small and thin package


    Original     		PDF TPCP8J01 8J01 TPCP8J01

    Untitled

    Abstract: No abstract text available
    Text: TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCP8007-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching


    Original     		PDF TPCP8007-H

    TPCP8004

    Abstract: No abstract text available
    Text: TPCP8004 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ TPCP8004 単位: mm ○ リチウムイオン 2 次電池用 0.33 ± 0.05 0.05 A M 8 5 • 小型, 薄型で実装面積が小さい。 • スイッチングスピードが速い。


    Original     		PDF TPCP8004 TPCP8004

    Untitled

    Abstract: No abstract text available
    Text: TPCP8107 MOSFETs Silicon P-Channel MOS U-MOS TPCP8107 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Small gate charge: QSW = 14.0 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 13.9 mΩ (typ.) (VGS = -10 V)


    Original     		PDF TPCP8107

    Untitled

    Abstract: No abstract text available
    Text: TPCP8207 MOSFETs Silicon N-channel MOS U-MOS TPCP8207 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) Small gate charge : QSW = 4.7 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V)


    Original     		PDF TPCP8207

    Untitled

    Abstract: No abstract text available
    Text: TPCP8305 MOSFETs Silicon P-Channel MOS U-MOS TPCP8305 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCP8305

    Untitled

    Abstract: No abstract text available
    Text: TPCP8111 MOSFETs Silicon P-Channel MOS U-MOS TPCP8111 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Small gate charge: QSW = 5.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -10 V)


    Original     		PDF TPCP8111

    8J01

    Abstract: TPCP8J01
    Text: TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type U-MOSIV ／Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A 5 8 0.475 1 4 2.8±0.1 Lead(Pb)-Free Small mounting area due to small and thin package


    Original     		PDF TPCP8J01 8J01 TPCP8J01

    TPCP8902

    Abstract: No abstract text available
    Text: TPCP8902 シリコンPNP / NPNエピタキシャル形 PCT方式 東芝トランジスタ TPCP8902 ○ 携帯機器用 ○ スイッチング用 単位: mm 0.33±0.05 0.05 M A 5 小型薄型で実装面積が小さい。 • 直流電流増幅率が高い。


    Original     		PDF TPCP8902 645mm2 645mm2 TPCP8902