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    TPCA8082 Search Results

    TPCA8082 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCA8082 Toshiba TPCA8082 - TRANSISTOR 32 A, 30 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, THIN, 2-5Q1S, 8 PIN, FET General Purpose Power Original PDF
    TPCA8082 Toshiba Transistors - Mosfets Original PDF
    TPCA8082 Toshiba Japanese - Transistors - Mosfets Original PDF

    TPCA8082 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TPCA8082 MOSFET シリコンNチャネルMOS形 U-MOS TPCA8082 1. 用途 • ノートブックPC用 • 携帯電子機器用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) オン抵抗が低い。: RDS(ON) = 2.9 mΩ (標準) (VGS = 10 V)


    Original     		PDF TPCA8082

    Untitled

    Abstract: No abstract text available
    Text: TPCA8082 MOSFETs Silicon N-Channel MOS U-MOS TPCA8082 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 10 V) (3) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)


    Original     		PDF TPCA8082

    Untitled

    Abstract: No abstract text available
    Text: TPCA8082 MOSFETs Silicon N-Channel MOS U-MOS TPCA8082 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)


    Original     		PDF TPCA8082

    Untitled

    Abstract: No abstract text available
    Text: TPCA8082 MOSFETs Silicon N-Channel MOS U-MOS TPCA8082 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)


    Original     		PDF TPCA8082

    MARKING toshiba 133

    Abstract: No abstract text available
    Text: TPCA8082 MOSFETs Silicon N-Channel MOS U-MOS TPCA8082 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)


    Original     		PDF TPCA8082 MARKING toshiba 133

    TPCA8082

    Abstract: No abstract text available
    Text: TPCA8082 MOSFET シリコンNチャネルMOS形 U-MOS TPCA8082 1. 用途 • ノートブックPC用 • 携帯電子機器用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) オン抵抗が低い。: RDS(ON) = 2.9 mΩ (標準) (VGS = 10 V)


    Original     		PDF TPCA8082 PCA8082 TPCA8082

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A