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    TPC8202 Search Results

    TPC8202 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TPC8202 Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    TPC8202 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8202 Toshiba Original PDF
    TPC8202 Toshiba N-Channel MOSFET Original PDF
    TPC8202 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8202 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS VI) Scan PDF
    TPC8202 Toshiba Matched Pair of N-Channel Enhancement MOSFETs Scan PDF

    TPC8202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm 2.5-V Gate drive Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8202

    TPC8202

    Abstract: No abstract text available
    Text: TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance


    Original     		PDF TPC8202 TPC8202

    TPC8202

    Abstract: No abstract text available
    Text: TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π •MOSVI TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance


    Original     		PDF TPC8202 TPC8202

    marking 3b transistor

    Abstract: No abstract text available
    Text: TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm 2.5-V Gate drive Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8202 marking 3b transistor

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    TPC8103

    Abstract: TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207
    Text: [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List [ 7 ] Superseded and Discontinued Product List 1. Superseded Products The following listed products are no longer being promoted in Toshiba’s marketing. Please refer to Recommended Replacement Part Number.


    Original     		PDF TPC8001 TPC8010-H TPC8002 TPC8014 TPC8005-H TPC8109 TPC8201 TPC8209 TPC8202 TPC8208 TPC8103 TPCS8210 application tpc8010 AD* SOP-8 TPCS8201 TPCS8206 tpc8109 tpc8102 tpc8204 tpc8207

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855

    2sK2750 equivalent

    Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
    Text: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21


    Original     		PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF TPC8202 10//A 20kfl)

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR t p t SILICON N CHANNEL MOS TYPE tt-MOSVI f t ? n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ü g (ON) —41m n (Typ.)


    OCR Scan     		PDF TPC8202 20ki2) --16V,

    marking M3s

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : RßS (ON)“ 41mO (Typ.) High Forward Transfer Admittance: |Yfs|=9S (Typ.)


    OCR Scan     		PDF TPC8202 20kil) marking M3s

    MARKING J1A SOP

    Abstract: TPC8202
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS TPC8202 INDUSTRIAL APPLICATIONS 2.5 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 41 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 9 S (Typ.)


    OCR Scan     		PDF TPC8202 MARKING J1A SOP TPC8202

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : Rpg (ON) = 41mO (Typ.) High Forward Transfer Admittance: |Yfs|=9S (Typ.)


    OCR Scan     		PDF TPC8202 200//A)

    TPC8202

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ßS (ON)“ 41mO (Typ.) High Forward Transfer Adm ittance: |Yfs|= 9 S (Typ.)


    OCR Scan     		PDF TPC8202 20kil) TPC8202

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 41mfi (Typ.)


    OCR Scan     		PDF TPC8202 41mfi 10//A 200//A)