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    Toshiba America Electronic Components TPC8109(TE12L)

    MOSFET P-CH 30V 10A 8SOP
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    DigiKey TPC8109(TE12L) Cut Tape 1
    • 1 $2.01
    • 10 $2.01
    • 100 $2.01
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    Toshiba America Electronic Components TPC8109 T2LSONYF)

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    Bristol Electronics TPC8109 T2LSONYF) 3,000
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    Toshiba America Electronic Components TPC8109(TE12L,Q)

    10000 MA, 30 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET (Also Known As: TPC8109)
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    Quest Components TPC8109(TE12L,Q) 13
    • 1 $1.5
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    • 100 $0.9
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    TPC8109(TE12L,Q) 13
    • 1 $1.5
    • 10 $1.25
    • 100 $0.9
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    Rochester Electronics TPC8109(TE12L,Q) 72,000 1
    • 1 $0.6081
    • 10 $0.6081
    • 100 $0.5716
    • 1000 $0.5169
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    Toshiba America Electronic Components TPC8109TE12LQM

    Transistor
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    ComSIT USA TPC8109TE12LQM 175
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    TPC8109 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TPC8109 Toshiba Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (max 0.03) (max 0.02); I_S (A): (max -10) Original PDF
    TPC8109 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8109 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
    TPC8109(TE12L) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 10A 8-SOP Original PDF

    TPC8109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPC8109

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109 TPC8109

    TPC8109

    Abstract: 20CPF
    Text: TPC8109 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPC8109 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 •


    Original     		PDF TPC8109 TPC8109 20CPF

    Untitled

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109

    TPC8109

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109 TPC8109

    Untitled

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109

    TPC8109

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109 TPC8109

    TPC8109

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109 TPC8109

    TPC8109

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		PDF TPC8109 TPC8109

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    tpc8107

    Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
    Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in


    Original     		PDF 3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


    Original     		PDF TPCM8001-H TPCM8003-H TPCM8002-H 2Q/2007 TPCM8102 1Q/2007 tpc8118 SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    TPC8109

    Abstract: 14MQ
    Text: T O S H IB A TPC8109 T O SH IB A FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O S H I T PC8 1 0 9 LITHIUM ION BATTEERY Unit in nun POREABLE MACHINES AND TOOLS NOTE BOOK PC •Compact and thin package, and a small mounting area •Low drain-source ON resistance


    OCR Scan     		PDF TPC8109 TPC8109 14MQ

    ipc8109

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ju P C 8 1 0 6 T , ju P C 8 1 0 9 T 2.0 GHz UPCONVERTER ICs FOR CELLULAR AND CORDLESS TELEPHONES The /¿PC8106T and /¿PC8109T are silicon m onolithic integrated circuits designed as upconverter series for the


    OCR Scan     		PDF uPC8106T uPC8109T and/xPC8109T ESATTM111 ipc8109