Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com TP802C04R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRSM 48 V Repetitive peak reverse voltage
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TP802C04R
500ns,
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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Untitled
Abstract: No abstract text available
Text: DATE DRAWN JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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TP802C04R
MS5D3004
MS5D10-2
H04-004-03a
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FUJI DATE CODE
Abstract: No abstract text available
Text: DATE DRAWN JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 CHECKED JAN.-25-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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Original
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MS5D3032
TP802C04RF192
M004-03a
H04-004-03a
FUJI DATE CODE
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