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    Motorola Semiconductor Products MTP3N100E

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    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N100E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    TP3N100E

    Abstract: 3n100e n100e 20F40 511 MOSFET TRANSISTOR motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP3 N 100E TM O S E -FE T ' P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS T his high voltag e M O S FET uses an a d vanced term ination


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