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    rc 3150

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent SEMICONDUCTOR TECHNICAL DATA by TP29N15E/D Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TM O S E -F E T is designed to w ithstand high


    OCR Scan     		PDF MTP29N15E/D rc 3150

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    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy


    OCR Scan     		PDF MTP29N15E/D TP29N15E 21A-09