10YQ045
Abstract: No abstract text available
Text: PD -93860 10YQ045 SCHOTTKY RECTIFIER 10 Amp Description/Features Major Ratings and Characteristics Characteristics 10YQ045 Units IF AV Rectangular waveform 10 A VRRM 45 V IFSM @ tp = 8.3ms sine 110 A VF @ 10Apk, TJ = 125°C 0.70 V -55 to 150 °C TJ,Tstg Operating and
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10YQ045
10Apk,
10YQ045
O-257AA
MIL-PRF-19500
sup252-7105
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Untitled
Abstract: No abstract text available
Text: PD - 93860A 10YQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 10YQ045 Units IF AV 10 A VRRM 45 V 110 A 0.70 V IFSM @ tp = 8.3ms half-sine VF @ 10Apk, TJ =125°C TJ,Tstg Operating and storage -55 to 150
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3860A
10YQ045
10Apk,
10YQ045
O-257AA
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ST6114
Abstract: ST6114 VALOR pulse pe-68517 valor st6114 Direct Replacement National EIA/TIA 568 B EIA/TIA 568 C pe-68517 XWM8045ACFN XWM8045ECFN
Text: WM8045 Advance Information August 1997 Rev.2.1 Twisted Pair Transceiver for 100BASE-TX, TP-FDDI and ATM-155Mb/s Description Features WM8045 is a high performance monolithic transceiver circuit that operates between a physical layer controller and the analogue signals present on twisted pair cable
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WM8045
100BASE-TX,
ATM-155Mb/s
WM8045
AM79565/AM566
ICS1887
MC68836
ST6114
ST6114 VALOR
pulse pe-68517
valor st6114
Direct Replacement National
EIA/TIA 568 B
EIA/TIA 568 C
pe-68517
XWM8045ACFN
XWM8045ECFN
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10YQ045
Abstract: No abstract text available
Text: PD - 93860A 10YQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 10YQ045 Units IF AV 10 A VRRM 45 V 110 A 0.70 V The 10YQ045 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel
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3860A
10YQ045
10YQ045
O-257AA
MIL-PRF-19500
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IRHE53Z30
Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 LCC-18
Text: PD - 93863A RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHE57Z30 100K Rads (Si) IRHE53Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID 12A 12A IRHE54Z30 600K Rads (Si)
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3863A
LCC-18)
IRHE57Z30
IRHE53Z30
IRHE54Z30
IRHE58Z30
1000K
MIL-STD-750,
MlL-STD-750,
IRHE53Z30
IRHE54Z30
IRHE57Z30
IRHE58Z30
LCC-18
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IRHE53Z30
Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 LCC-18
Text: PD - 93863B RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHE57Z30 100K Rads (Si) IRHE53Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID 12A 12A IRHE54Z30 600K Rads (Si)
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93863B
LCC-18)
IRHE57Z30
IRHE53Z30
IRHE54Z30
IRHE58Z30
1000K
MIL-STD-750,
MlL-STD-750,
IRHE53Z30
IRHE54Z30
IRHE57Z30
IRHE58Z30
LCC-18
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Untitled
Abstract: No abstract text available
Text: PD - 93863C IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω
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93863C
LCC-18)
IRHE57Z30
IRHE53Z30
IRHE54Z30
IRHE58Z30
1000K
JANSR2N7494U5
MIL-PRF-19500/700
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Untitled
Abstract: No abstract text available
Text: PD - 93863E IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω
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93863E
IRHE57Z30
JANSR2N7494U5
LCC-18)
MIL-PRF-19500/700
IRHE53Z30
JANSF2N7494U5
IRHE54Z30
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Untitled
Abstract: No abstract text available
Text: PD - 93863 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHE57Z30 100K Rads (Si) IRHE53Z30 300K Rads (Si) RDS(on) 0.07Ω 0.07Ω ID 12A 12A IRHE54Z30 600K Rads (Si)
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LCC-18)
IRHE57Z30
IRHE53Z30
IRHE54Z30
IRHE58Z30
1000K
LCC-18
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IRHE53Z30
Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 JANSR2N7494U5 LCC-18
Text: PD - 93863E IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω
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93863E
IRHE57Z30
JANSR2N7494U5
LCC-18)
MIL-PRF-19500/700
IRHE53Z30
JANSF2N7494U5
IRHE54Z30
IRHE53Z30
IRHE54Z30
IRHE57Z30
IRHE58Z30
JANSR2N7494U5
LCC-18
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IRHE53Z30
Abstract: IRHE54Z30 IRHE57Z30 IRHE58Z30 JANSR2N7494U5 LCC-18 120 V dc motor drive circuit
Text: PD - 93863D IRHE57Z30 JANSR2N7494U5 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/700 5 Product Summary Part Number IRHE57Z30 IRHE53Z30 TECHNOLOGY Radiation Level RDS(on) 100K Rads (Si) 0.07Ω 300K Rads (Si) 0.07Ω
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93863D
IRHE57Z30
JANSR2N7494U5
LCC-18)
MIL-PRF-19500/700
IRHE53Z30
JANSF2N7494U5
IRHE54Z30
IRHE53Z30
IRHE54Z30
IRHE57Z30
IRHE58Z30
JANSR2N7494U5
LCC-18
120 V dc motor drive circuit
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AN-994
Abstract: IRFR2405 IRFU2405 DSA0030910
Text: PD - 93861 IRFR2405 IRFU2405 Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from
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IRFR2405
IRFU2405
IRFR2405)
IRFU2405)
AN-994
IRFR2405
IRFU2405
DSA0030910
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Untitled
Abstract: No abstract text available
Text: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from
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IRFR2407
IRFU2407
IRFR2407)
IRFU2407)
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AN-994
Abstract: IRFR2407 IRFU2407
Text: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from
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IRFR2407
IRFU2407
IRFR2407)
IRFU2407)
AN-994
IRFR2407
IRFU2407
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AN-994
Abstract: IRFR2405 IRFU2405
Text: PD - 93861 IRFR2405 IRFU2405 Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from
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IRFR2405
IRFU2405
IRFR2405)
IRFU2405)
i52-7105
AN-994
IRFR2405
IRFU2405
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AN-994
Abstract: IRFR2405 IRFU2405
Text: PD - 93861 IRFR2405 IRFU2405 Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω G Seventh Generation HEXFET® Power MOSFETs from
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IRFR2405
IRFU2405
IRFR2405)
IRFU2405)
AN-994
IRFR2405
IRFU2405
|
AN-994
Abstract: IRFR2407 IRFU2407
Text: PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS(on) = 0.026Ω G Seventh Generation HEXFET® Power MOSFETs from
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IRFR2407
IRFU2407
IRFR2407)
IRFU2407)
in52-7105
AN-994
IRFR2407
IRFU2407
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IRFR2407
Abstract: AN-994 IRFU2407
Text: 2002-04-02 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-171-53 IRFR2407 HEXFET D-Pak PD -93862 IRFR2407 IRFU2407 Surface Mount IRFR2407 l Straight Lead (IRFU2407)
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IRFR2407
IRFR2407
IRFU2407
IRFR2407)
IRFU2407)
f52-7105
AN-994
IRFU2407
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7476 truth table
Abstract: 7474 truth table fairchild 9322 se 9315-1 signetics 8281 7474 equivalent 9N73/7473 82S62 signetics 8235 93178
Text: SELECTOR GUIDE/FUNCTIONAL INDEX MSI MULTIPLEXERS Function Type No. Enable Input Comple mentary O u tp ut 9322 93L22 Dual 4 -Input 9309 93L09 93153 X X X X Single 8 -In p u t 9312 93L12 93S12 9313 93151 93152 X X X X X X 93150 X X X X X X X Page No. Data Z
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93L22
93L09
93L12
93S12
16-Input
Rese406
82S63
82S64
82S90
7476 truth table
7474 truth table
fairchild 9322
se 9315-1
signetics 8281
7474 equivalent
9N73/7473
82S62
signetics 8235
93178
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9386DC
Abstract: 9386DM 9386FC 9386FM 9386PC
Text: 86 Dl 9386 10 & . c > C O N N E C T IO N D IA G R A M S P IN O U T A Ao [ 7 T il vcc 4 -B IT Q U A D E X C LU S IV E -N O R Bo [ T W ] A3 (W ith O p e n -C o lle c to r Outputs O o [T 12] B3 Ö -: O i[T iT jO s Bi [ T TÖ102 Ai ( T GND [ 7 D E S C R IP T IO N — T he '8 6 co n sists of fo u r in d e p e n d e n t E xclu sive -N O R gates
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9386PC
9386DC
9386DM
9386FC
9386FM
9386PC
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Fairchild TTL
Abstract: 9386 ScansUX990 schematic diagram AND gates fairchild 9386
Text: TTL/MSI 9386 4-BIT QUAD EXCLUSIVE-NOR D E S C R IP T IO N — The 9 3 8 6 consists of four independent Exclusive-N O R gates with open collector outputs. Single 1-bit comparisons may be made with each gate, or multiple bit com parisons may be made by connecting the outputs of the four gates together. Typical power dissipation is 1 70 mW.
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74LS568
Abstract: TTL 74121 74167 74LSS02 74ls399 54LS 74LS266 9602 Fairchild 9602 74123 74ls379
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL -TTL D93 54LS/74LS379 D94 9386, 74LS266, 54LS/74LS386 D95 54LS/74LS398 Vcc 1 4 5 12 13 4 5 7 6 14 15 17 16 lOa Ila lo b lib lo c lie lo d lid r ei f i r E5i r?i n S CP Qa Qb 2 GND Vcc = Pin 20 GND = Pin 10 Vcc = Pin 16
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54LS/74LS379
74LS266,
54LS/74LS386
54LS/74LS398
54LS/74LS399
54LS/74LS574
54LS/74LSS02
96L02
96S02
96LS02
74LS568
TTL 74121
74167
74LSS02
74ls399
54LS
74LS266
9602 Fairchild
9602 74123
74ls379
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dy 255
Abstract: 74s405 H R C M F 2J 225 Fairchild 9960 nixie driver 9614 line driver ci 8602 gn block diagram FJH211 Fairchild msi cul9960 variable frequency circuit diagram using IC 555
Text: IN THE, BOSTON - 6 17- 4 4 * A SUBSIDiA) ./ OF DUCOMMUN INCORPOfiATED S, MASS vw . JU N E 1 97 S Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the
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sim 6930
Abstract: T9015 cy 6935 ba2 code
Text: H O LTE K H r HT9015 RF Single Chip for Cordless Phone Features • • • • • O p e ra tin g voltage: 2.7V~6V E x trem e ly low pow er consum ption c u rre n t - Ic c = 0|iA typ. in b a tte ry -sa v in g m ode - Ic c = 7.5m A (typ.) in sta n d b y m ode
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HT9015
T9015
sim 6930
cy 6935
ba2 code
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