MSW2000
Abstract: MSW2000-200
Text: Surface Mount PIN Diode SP2T Switches MSW2000-200 & MSW2010-201 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 100 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power ( 500 W )
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MSW2000-200
MSW2010-201
MSW2000-200
MSW2010-201
MSW2000
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IGCT
Abstract: ka2 DIODE igct abb 11ka
Text: VRSM = 5200 V IFAVM = 810 A IFRMS = 1270 A IFSM = 10.5 kA VF0 = 0.90 V rF = 0.600 mΩ Ω Rectifier Diode 5SDD 08D5000 Target specification Doc. No. 5SYA1165-00 Sep. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number
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08D5000
5SYA1165-00
08D4800
08D4400
CH-5600
IGCT
ka2 DIODE
igct abb
11ka
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UF diodes common anode
Abstract: No abstract text available
Text: ON Semiconductort MMBD717LT1 Common Anode Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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MMBD717LT1
UF diodes common anode
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Untitled
Abstract: No abstract text available
Text: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin
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BZG04-Series
2002/95/EC
2002/96/EC
DO-214AC
D-74025
13-Apr-05
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Untitled
Abstract: No abstract text available
Text: BZG04-Series VISHAY Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • Glass passivated junction High reliability Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin
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BZG04-Series
DO-214AC
D-74025
23-Jun-04
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Untitled
Abstract: No abstract text available
Text: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin
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BZG04-Series
2002/95/EC
2002/96/EC
DO-214AC
D-74025
15-Sep-05
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do214ac 9v1 zener
Abstract: No abstract text available
Text: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • High reliability Stand-off voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin. • AEC-Q101 qualified
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BZG04-Series
AEC-Q101
2002/95/EC
2002/96/EC
DO214AC
18-Jul-08
do214ac 9v1 zener
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CIE1931
Abstract: No abstract text available
Text: Opto Semiconductors Dimming InGaN LEDs by Hubert Ott and Ludwig Plötz, January 1999, Munich, Germany Introduction The first blue Light-Emitting Diodes LEDs were developed years ago. The active blue lightemitting material in these LEDs was pure SiC, and it had a very low light output. Later, GaN was
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BZG04-10
Abstract: BZG04-11 BZG04-12 BZG04-13 BZG04-15 BZG04-16 BZG04-8V2 BZG04-9V1
Text: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin
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BZG04-Series
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
BZG04-10
BZG04-11
BZG04-12
BZG04-13
BZG04-15
BZG04-16
BZG04-8V2
BZG04-9V1
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D1265C5
Abstract: d1265 IDH12G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH12G65C5
D1265C5
d1265
IDH12G65C5
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D1265C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDW12G65C5
D1265C5
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Zener diodes
Abstract: color band BZV55 BZV55 sod-80 with blue band Z 3 M BZV55-C2V4 BZV55-C2V7 BZV55-C3V0 BZV55C15 BZV55-C3V6
Text: BZV55 Series Zener Voltage Range: 2.4 to 75 Volts Features Silicon Planar Power Zener Diodes. For use as low voltage stabilizer or voltage reference. The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance
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BZV55
BZV55-B,
BZV55-F,
BZV55-C.
OD-80)
BZV55-B62
BZV55-C68
BZV55-F68
BZV55-B68
BZV55-C75
Zener diodes
color band BZV55
sod-80 with blue band
Z 3 M
BZV55-C2V4
BZV55-C2V7
BZV55-C3V0
BZV55C15
BZV55-C3V6
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Untitled
Abstract: No abstract text available
Text: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • High reliability Stand-off voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin. • AEC-Q101 qualified
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BZG04-Series
AEC-Q101
2002/95/EC
2002/96/EC
DO214AC
11-Mar-11
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BZG04-10
Abstract: BZG04-11 BZG04-12 BZG04-13 BZG04-15 BZG04-16 BZG04-8V2 BZG04-9V1 BZG04-18
Text: BZG04-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time typ. ≤ 1 ps from 0 to VZmin
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BZG04-Series
2002/95/EC
2002/96/EC
DO-214AC
18-Jul-08
BZG04-10
BZG04-11
BZG04-12
BZG04-13
BZG04-15
BZG04-16
BZG04-8V2
BZG04-9V1
BZG04-18
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011 545 77 26
Abstract: BZG04-9V1 BZG04-18, 135 BZG04-62 BZG04-10 BZG04-11 BZG04-12 BZG04-8V2
Text: TH97/10561QM BZG04- Series TW00/17276EM IATF 0060636 SGS TH07/1033 ZENER DIODES SMA FEATURES : 5.3 ± 0.35 4.2 ± 0.25 1.3 ± 0.2 * High reliability * Stand-off Voltage range 8.2 V to 220 V * Excellent clamping cabability * Fast respon time typ. ≤ 1ps form 0 to VZmin
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TH97/10561QM
BZG04-
TW00/17276EM
TH07/1033
UL94V-O
BZG04-100
BZG04-110
BZG04-120
BZG04-130
BZG04-150
011 545 77 26
BZG04-9V1
BZG04-18, 135
BZG04-62
BZG04-10
BZG04-11
BZG04-12
BZG04-8V2
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Untitled
Abstract: No abstract text available
Text: Certificate TH97/10561QM BZG04- Series Certificate TW00/17276EM ZENER DIODES SMA FEATURES : 5.4 ± 0.2 4.4 ± 0.2 1.3 ± 0.2 * High reliability * Stand-off Voltage range 8.2 V to 220 V * Excellent clamping cabability * Fast respon time typ. ≤ 1ps form 0 to V Zmin
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TH97/10561QM
BZG04-
TW00/17276EM
UL94V-O
Rth43
BZG04-100
BZG04-110
BZG04-120
BZG04-130
BZG04-150
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDW12G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH12G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH12G65C5
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BR211 SERIES This data sheet contains advance information and specifications are subject to change without notice. SSE D • 7Z2ST~O S‘ ^ 5 3 1 3 1 0023255 0 ■ N AMER PHILIPS/DISCRETE BREAKOVER DIODES A range o f bidirectional diodes in hermetically sealed axial-leaded implosion-diode glass outlines w ith a
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BR211
T-25-05
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121000
Abstract: diode byt 45 alps 502 alps 503 a ALPS 102 Alps Electric vco D241 diode BYT 1000
Text: SGS-THOMSON B Y T 1 2 -1 0 0 0 FAST RECOVERY RECTIFIER DIODES • ■ ■ . VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-O FF SW ITCHING SUITABLE APPLICATIO N S ■ FREE W HEELING DIODE IN CONVERTERS
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00b02M3
00b0244
121000
diode byt 45
alps 502
alps 503 a
ALPS 102
Alps Electric vco
D241 diode
BYT 1000
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skiip gb 120
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
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HL1323
Abstract: No abstract text available
Text: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm
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HL1323DM
HL1323DM
44Tb2GS
HL1323
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HL8318G
Abstract: No abstract text available
Text: HL8318G-Laser Diode Description HL8318G is a high-power 0.8 /um GaAIAs laser diode with double heterojunction structure. It is suitable as a light source in optical disc m em ories and various other types of optical equip m ent. Single positive power supply is available for LD
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HL8318G---------------Laser
HL8318G
HL8318G
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