TP 1078
Abstract: T1078
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1078 N ø30 C A ø30 ø3,5 x 2 deep on both sides HK plug 2,8 x 0,8 2 G plug 2,8 x 0,8 VWK Aug. 1996 T 1078 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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TP 1078
Abstract: No abstract text available
Text: T 1078 F Elektrische Eigenschaften Electrical properties iöchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert
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12t-value
41814-151A4
TP 1078
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EUPEC T 1078 F
Abstract: T1078
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1078 N ø30 C A ø30 ø3,5 x 2 deep on both sides HK plug 2,8 x 0,8 2 G plug 2,8 x 0,8 VWK Aug. 1996 T 1078 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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EUPEC T 1078 F
Abstract: No abstract text available
Text: T 1078 F Elektrische Eigenschaften Electrical properties iöchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert
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Original
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12t-value
10suant
EUPEC T 1078 F
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1078 N ø30 C A ø30 ø3,5 x 2 deep on both sides HK plug 2,8 x 0,8 2 G plug 2,8 x 0,8 VWK Aug. 1996 T 1078 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 1078 N ø30 C A ø30 ø3,5 x 2 deep on both sides HK plug 2,8 x 0,8 2 G plug 2,8 x 0,8 VWK Aug. 1996 T 1078 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: T 1078 F Elektrische Eigenschaften Electrical properties iöchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert
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Original
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12t-value
10hnical
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PDF
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Untitled
Abstract: No abstract text available
Text: T 1078 F Elektrische Eigenschaften Electrical properties iöchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert
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12t-value
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transistor w2a 40
Abstract: xw4f 4500 microcomputer
Text: MITSUBISHI MICROCOMPUTERS 4551 Group SINGLE-CHIP 4-BIT CMOS M ICROCOMPUTER DESCRIPTION • LCD control circuit Segment Common o u tp u
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14-bit
M34551E8-XXXFP,
M34551E8FP
PCA7414
transistor w2a 40
xw4f
4500 microcomputer
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17-33l
Abstract: TMA CM infrared remote control ON/OFF switch application M34551 M34551E8 M34551E8FP M34551E8-XXXFP M34551M4 M34551M4-XXXFP 111l2
Text: MITSUBISHI MICROCOMPUTERS 4551 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTER DESCRIPTION • LC D co n tro l c irc u it S e g m e n t o u tp u
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14-bit
M34551
PCA7414
OOOO16
17-33l
TMA CM
infrared remote control ON/OFF switch application
M34551E8
M34551E8FP
M34551E8-XXXFP
M34551M4
M34551M4-XXXFP
111l2
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Untitled
Abstract: No abstract text available
Text: E U PE C 5SE 1> 34032^7 OOOOSbb T2 7 • U P E C A 930 S 2000 Typenreihe/Type range 1600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm Vrrm tp = 1 iS Vrrm(C Maximum permissible values V 1600.2000 V 20 V 50 Itrmsm Itavm Itsm
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T-91-20
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T930S
Abstract: A358S A438S T128F T318F T698F EUPEC tt 104 EUPEC tt 25 N 12 ST178 T510S
Text: S2E J> EUPEC aHGBET? 0G0057Q 45Ô M U P E C A 1250 S ^ 2 * 5 '2 - 1 600 lÿpenreihe/Type range Elektrische Eigenschaften Höchstzulässige Werte 1000 1100 1200 1300* —0* Electrical properties Vrrm tp= 1 «S 'rfTj ’ "/j Itavm tc = 85°C tc = 70°C
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A1250
T-91-20
T930S
A358S
A438S
T128F
T318F
T698F
EUPEC tt 104
EUPEC tt 25 N 12
ST178
T510S
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Untitled
Abstract: No abstract text available
Text: EUPEC 52E D 3403517 ODPOSbR 73b « U P E C A 1050 S / ~2S -Z Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V V 15 50 V Vdrm V rrm V rrm C tp = 1 US
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Untitled
Abstract: No abstract text available
Text: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS
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CQ 13.560
Abstract: XMT 2335 AN 8739 sb M6072 LF 359 sample & hold IC c 5296
Text: Am6072 Companding D-to-A C onverter for PCM Communication Systems Distinctive Characteristics • Improved pin-for-pin replacement fo r DAC-86 • M icroprocessor co n tro lle d operations • M u ltip lyin g operation • Negligible o u tp u t noise • M o n o to n icity guaranteed over entire dynam ic range
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300ns
Am6072
DAC-86
Am6072
CQ 13.560
XMT 2335
AN 8739 sb
M6072
LF 359 sample & hold IC
c 5296
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STP40N10
Abstract: 100VDS C4022 STP40N10FI STP40N STP40N1OFI 2815a
Text: 7=^237 O üM b 4f l 3 EO'ì • S G T H SGS-THOMSON :LËOT s«S íy 7 STP40N1o STP40N1OFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TY P E STP40N10 S TP 40N J0FI V dss R dS(oii Id 100 V 100 V < 0.04 Q < 0.04 a 40 A 22 A ■ TYPICAL R D S (o n ) = 0.035 Q
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STP40N10
STP40N1OFI
STP40N10
STP40N
100VDS
STP40N10/FI
C4022
STP40N10FI
STP40N1OFI
2815a
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Untitled
Abstract: No abstract text available
Text: W /mlH EW LETT* mLEM P A C K A R D Isolation Amplifier w ith Short Circuit and Overload D etection Technical Data HCPL-788J F ea tu res • O u tp u t V oltage D irectly C om patible w ith A/D C o n v e rte rs 0 V to Vrep • F a s t (3 [is) S h o rt C ircu it
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HCPL-788J
SO-16
HCPL-788J
-788J
5966-0001E
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jrm a55
Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.
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64/256K
RS232C-A
jrm a55
tip 0ff 0401 ANALOG
irf 5630
ko 224 4K tantalum capacitors jrm a45
irf 7408
bt 4840 pinout diagram
A9F7
29 INCH crt tv FBT pinout
chassis 3111 253 3266 2e
jrm A45
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50N05E
Abstract: 1N5325 optocoupler H-BRIDGE IC 555 control motor brushless MOC1000 50N05 MTP50N05E mpm3002 motorola an1078 MTP40N06M
Text: Order this document by AN1078/D MOTOROLA m SEMICONDUCTOR APPLICATION NOTE f A N 1078 REV. 1 N ew Com ponents S im p lify Brush DC M o to r Drives By Warren Schultz Motorola Discrete Applications A variety of new com ponents are making brush motor drive design easier. One of these com ponents is a brushless motor control IC that is easily set up to drive brush
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AN1078/D
AN1078
69T-L
50N05E
1N5325
optocoupler H-BRIDGE
IC 555 control motor brushless
MOC1000
50N05
MTP50N05E
mpm3002
motorola an1078
MTP40N06M
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OQ 012
Abstract: ZA32
Text: fax id: 1078 v;:;> » « * Ä fe r " A CY62128V Family r^ Y i. j 128K x 8 Static RAM Features th re e -sta te drivers. T hese devices have an au to m a tic pow er-dow n feature, reducing the po w e r con sum p tion by ove r 99% w h en de selected . T he C Y 6 2 1 2 8 V fam ily is available in the
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CY62128V
OQ 012
ZA32
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st c037
Abstract: No abstract text available
Text: fax id: 1078 CY62128V Family 128K x 8 Static RAM three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide SOIC, TSOP, and STSOP packages.
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CY62128V
CY62128V)
CY62128V25)
CY62128V18)
450-mil-wide
st c037
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1G05
Abstract: 2SA1078 2SC2528
Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are
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2SA1078
2SA1078
2SC2528,
10MHz
20VilE
300ms
1G05
2SC2528
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WS 78L05
Abstract: 78L05 spice HPCL-7820 1 HP SINGLE PHASE induction motor speed control using pwm inverter
Text: WS I HEWLETTf mLtimPACKARD D esigning w ith H ew lett-Packard Isolation A m plifiers Application Note 1078 Introduction One of the more difficult problems that designers may face is trying to isolate precision analog signals in an extremely noisy environ
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RAM 62128
Abstract: STATIC RAM 62128 62128
Text: fax id: 1078 CY62128V 128K x 8 Static RAM Featu res fea tu re that reduces pow er con sum p tion by m ore than 75% w h en deselected. • 2.7V - 3.6V o peration W riting to the de vice is acco m plishe d by taking chip enable one OE-, and w rite e n ab le (W E) inputs LO W and chip enab le
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CY62128V
RAM 62128
STATIC RAM 62128
62128
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