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    TOSHIBA TRANSISTOR SILICON PCT Search Results

    TOSHIBA TRANSISTOR SILICON PCT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR SILICON PCT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1101ACT

    Abstract: RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN2101ACT RN2106ACT
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN1101ACT RN1106ACT RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT RN1103ACT RN1106ACT RN2106ACT

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN2101CT RN2106CT RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN1101CT RN1106CT

    Untitled

    Abstract: No abstract text available
    Text: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT, RN1108CT, RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


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    PDF RN1107CT RN1109CT RN1107CT, RN1108CT, RN2107CT RN2109CT RN1108CT

    Untitled

    Abstract: No abstract text available
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT, RN1102ACT, RN1103ACT RN1104ACT, RN1105ACT, RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


    Original
    PDF RN1101ACT RN1106ACT RN1101ACT, RN1102ACT, RN1103ACT RN1104ACT, RN1105ACT, RN2101ACT RN2106ACT

    Untitled

    Abstract: No abstract text available
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN1101ACT RN1106ACT RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT

    RN1101ACT

    Abstract: RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN2101ACT RN2106ACT
    Text: RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN1101ACT RN1106ACT RN1101ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT RN1103ACT RN1106ACT RN2106ACT

    Untitled

    Abstract: No abstract text available
    Text: RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN1106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


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    PDF RN1101CT RN1106CT RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN2101CT RN2106CT

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


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    PDF RN2107CT RN2109CT RN2107CT, RN2108CT, RN1107CT RN1109CT

    RN2112ACT

    Abstract: RN2113ACT
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN2112ACT RN2113ACT RN1112CT, RN1113CT RN2113ACT

    RN1101ACT

    Abstract: RN1106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT 1D43
    Text: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications


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    PDF RN2101ACT RN2106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN1101ACT RN1106ACT RN1106ACT RN2103ACT RN2106ACT 1D43

    Untitled

    Abstract: No abstract text available
    Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT, RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


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    PDF RN2112ACT RN2113ACT RN2112ACT, RN1112CT, RN1113CT

    RN4605

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -


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    PDF RN4605 RN4605

    RN4603

    Abstract: No abstract text available
    Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •


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    PDF RN4603 RN4603

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


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    PDF RN4610 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4985 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 • Including Two Devices in US6 (Ultra Super Mini Type


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    PDF RN4985

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4988 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    PDF RN4988

    RN4610

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


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    PDF RN4610 RN4610

    Untitled

    Abstract: No abstract text available
    Text: RN4991 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) R N AQQ1 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 2.1 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type


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    PDF RN4991

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    PDF RN4984

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4990 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RMlQOn SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    PDF RN4990

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N I R I ) ? SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm + 0.2 2 .8 -0 .3 + 0.2 1 .6 - 0.1


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    PDF RN4602

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N a f i n Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 + 0.2 1. 6 - 0.1 3- •


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    PDF RN4605 47ktt

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4981 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type


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    PDF RN4981

    transistor wr2

    Abstract: No abstract text available
    Text: TOSHIBA RN4606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl f i Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .8 + 0.2 - 0.3 + 0.2 1 . 6 - 0.1


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    PDF RN4606 961001EAA2' transistor wr2