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    TOSHIBA TRANSISTOR IC 100A Search Results

    TOSHIBA TRANSISTOR IC 100A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR IC 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)


    Original     		PDF GT5J301

    8G151

    Abstract: GT8G151
    Text: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode VGE = 2.5 V min. (@IC = 150 A) • Peak collector current: IC = 150 A (max) TSON-8 8 0.2 0.65±0.05 Rating Unit VCES


    Original     		PDF GT8G151 8G151 GT8G151

    GT5J301

    Abstract: No abstract text available
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)


    Original     		PDF GT5J301 GT5J301

    Untitled

    Abstract: No abstract text available
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage


    Original     		PDF GT15J301

    GT15J301

    Abstract: TOSHIBA IGBT
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage


    Original     		PDF GT15J301 GT15J301 TOSHIBA IGBT

    Untitled

    Abstract: No abstract text available
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303

    2-10R1C

    Abstract: GT10J303 igbt 300V 10A
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 2-10R1C GT10J303 igbt 300V 10A

    15j301

    Abstract: transistor 15j301 GT15J301 2-10R1C
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage


    Original     		PDF GT15J301 15j301 transistor 15j301 GT15J301 2-10R1C

    10j303

    Abstract: IGBT Guide GT10J303 Toshiba c
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 10j303 IGBT Guide GT10J303 Toshiba c

    2-10R1C

    Abstract: 5J301 GT5J301 Toshiba c
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage


    Original     		PDF GT5J301 2-10R1C 5J301 GT5J301 Toshiba c

    GT15J311

    Abstract: No abstract text available
    Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)


    Original     		PDF GT15J311

    GT50J322

    Abstract: No abstract text available
    Text: GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT50J322 GT50J322

    GT30J322

    Abstract: IGBT Guide
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT30J322 GT30J322 IGBT Guide

    Untitled

    Abstract: No abstract text available
    Text: GT15J311,GT15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J311,GT15J311(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 15A)


    Original     		PDF GT15J311

    Toshiba 77 8A DIODE

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTO} »El TQTTESD DDlbölfi 99D 9097250 TOSHIBA DISCRETE/OPTO 16818 D T -B R -IB TOSHIBA FIE L D EFFECT TRANSISTOR YT F 4 4 3 SIL IC O N N CHANNEL MOS TYPE (tf-H O S I) SEMICONDUCTOR ¿ToHúhti 1 Ti TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 100nA 250yA 250uA 00A/ys Toshiba 77 8A DIODE

    Untitled

    Abstract: No abstract text available
    Text: ~T=Í TOSHIBA íDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO f/Zìhìhn DE I ^ O ^ ï a S O 99D 16890 □ Dlbfl'ìG DT-B^-n TOSHIBA FIE L D EFFECT TRANSISTOR YT F 8 2 3 SIL IC O N N CHANNEL MOS TYPE SEMICONDUCTOR TECHNICAL DATA (DUMOSE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 500nA 250pA 250pA CHARACTERIST225V 00A/us

    TOSHIBA 1N DIODE

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS


    OCR Scan     		PDF DT-39-13 100nA 250uA 00A/us TOSHIBA 1N DIODE

    YTA640

    Abstract: No abstract text available
    Text: TOSHIBA YTA640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF YTA640 YTA640

    diode SS 3

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2699 diode SS 3

    2SK3017

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


    OCR Scan     		PDF 2SK3017 L-12-(

    TOSHIBA J55

    Abstract: 2SK2746 SC-65
    Text: TOSHIBA 2SK2746 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 MAX. •


    OCR Scan     		PDF 2SK2746 -l-30 TOSHIBA J55 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low D rain-Source O N Resistance


    OCR Scan     		PDF 2SK2611

    2SK2599

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2


    OCR Scan     		PDF 2SK2599 2SK2599

    ENV-05s

    Abstract: 5anh
    Text: TOSHIBA 2SK2381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2381 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2381 --50V, ENV-05s 5anh