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    TOSHIBA TRANSISTOR C5198 Search Results

    TOSHIBA TRANSISTOR C5198 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR C5198 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Toshiba transistor c5198

    Abstract: C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original
    2SC5198 2SA1941 2-16C1A Toshiba transistor c5198 C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198 PDF

    C5198

    Abstract: Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 C5198 transistor equivalent 2SA1941
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original
    2SC5198 2SA1941 C5198 Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 C5198 transistor equivalent 2SA1941 PDF

    Toshiba transistor c5198

    Abstract: C5198 c5198 sample circuit toshiba c5198 2sa1941 2SC5198 c5198 transistor 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original
    2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 sample circuit toshiba c5198 2sa1941 2SC5198 c5198 transistor 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198 PDF

    Toshiba transistor c5198

    Abstract: C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original
    2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198 PDF

    Toshiba transistor c5198

    Abstract: No abstract text available
    Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage


    Original
    2SC5198 2SA1941 Toshiba transistor c5198 PDF