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    TOSHIBA SILICON N-CHANNEL IEGT Search Results

    TOSHIBA SILICON N-CHANNEL IEGT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA SILICON N-CHANNEL IEGT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST2100GXH22A

    Abstract: TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200
    Text: TOSHIBA ST2100GXH22A TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST2100GXH22A HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs


    Original     		PDF ST2100GXH22A 25degC) ST2100GXH22A TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200

    nikkei S-200

    Abstract: TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH
    Text: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS (Ta=25degC) ITEMs


    Original     		PDF ST1500GXH22 25degC) 10ms-Halransportation nikkei S-200 TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH

    IEGT 4500V

    Abstract: TOSHIBA SILICON N-CHANNEL IEGT TOSHIBA IEGT TOSHIBA IEGT 4500V 1000GXHH25 S6X06 IEGT tf75 IEGT toshiba
    Text: TOSHIBA S6X06 TOSHIBA SILICON N-CHANNEL IEGT S6X06 <TENTATIVE SPEC.> HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APLICATIONS ● High Input Impedance. ● Enhancement Mode. EQUIVALENT CIRCUIT Ｃ Ｅ Ｅ Ｇ MAXIMUM RATINGS Ta=25℃ CHARACTERISTICS Collector-Emitter Voltage


    Original     		PDF S6X06 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT TOSHIBA IEGT TOSHIBA IEGT 4500V 1000GXHH25 S6X06 IEGT tf75 IEGT toshiba

    IEGT

    Abstract: TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275
    Text: MG400FXF2YS53 TOSHIBA GTR Module Silicon N-Channel IEGT MG400FXF2YS53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit E1 C2 E1 C2 G1 G2 IEGT 2


    Original     		PDF MG400FXF2YS53 IEGT TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275

    IEGT

    Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • The 5th generation · Enhancement-mode · High speed : tf = 0.41 µs typ. (IC = 40A) · Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


    Original     		PDF GT40Q321 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321

    MG1200FXF1US53

    Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba
    Text: MG1200FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG1200FXF1US53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


    Original     		PDF MG1200FXF1US53 MG1200FXF1US53 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba

    MG800FXF1US53

    Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK
    Text: MG800FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG800FXF1US53 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C E E G E Maximum Ratings Ta = 25°C


    Original     		PDF MG800FXF1US53 MG800FXF1US53 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK

    IEGT

    Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


    Original     		PDF GT40Q321 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter

    TOSHIBA IEGT

    Abstract: IGBT GT40Q321 with IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 TOSHIBA IEGT diode
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 s typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


    Original     		PDF GT40Q321 TOSHIBA IEGT IGBT GT40Q321 with IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 TOSHIBA IEGT diode

    TOSHIBA IEGT

    Abstract: Toshiba injection
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


    Original     		PDF GT40Q321 TOSHIBA IEGT Toshiba injection

    schematic diagram igbt inverter welding machine

    Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
    Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality


    Original     		PDF