Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2301-RN2306 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design
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RN2301-RN2306
RN2301,
RN2302,
RN2303
RN2304,
RN2305,
RN2306
RN1301
RN2301
RN2302
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2114-RN2118 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2114, RN2115, RN2116, RN2117, RN2118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 1.6+0.2 • With Built-in Bias Resistors •
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RN2114-RN2118
RN2114,
RN2115,
RN2116,
RN2117,
RN2118
RN1114--
-RN1118
RN2114
RN2115
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Untitled
Abstract: No abstract text available
Text: RN2110,RN2111 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110, RN2111 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design
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RN2110
RN2111
RN2110,
RN1110,
RN1111
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors
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RN2001-RN2006
RN2001,
RN2002,
RN2003
RN2004,
RN2005,
RN2006
RN1001
RN1006
RN2001
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nj TRANSISTOR
Abstract: No abstract text available
Text: TOSHIBA RN2107F-RN2109F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors
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RN2107F-RN2109F
RN2107F,
RN2108F,
RN2109F
RN1107F
RN1109F
RN2107F
RN2108F
RN2107F-2109F
nj TRANSISTOR
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RN4605
Abstract: No abstract text available
Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -
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RN4605
RN4605
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2421-RN2427 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (M ax.)= _ 800mA)
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RN2421-RN2427
RN2421,
RN2422,
RN2423,
RN2424
RN2425,
RN2426,
RN2427
800mA)
RN1421
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS + 0.5 • With Built-in Bias Resistors • Simplify Circuit Design
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RN2407
RN2408
RN2409
RN2407,
RN2408,
RN2409
RN1407
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RN2223
Abstract: ko iq
Text: TOSHIBA RN2221-RN2227 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2221, RN2222, RN2223, RN2224 RN2225, RN2226, RN2227 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm 4.2MAX. High Current Type (l£ (MAX)= —800mA)
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RN2221-RN2227
RN2221,
RN2222,
RN2223,
RN2224
RN2225,
RN2226,
RN2227
--800mA)
RN1221
RN2223
ko iq
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RN4603
Abstract: No abstract text available
Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •
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RN4603
RN4603
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5
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RN2701
RN2706
RN2701,
RN2702,
RN2703,
RN2704,
RN2705,
RN2701
RN2702
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transistor 2204
Abstract: No abstract text available
Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors
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RN2201-RN2206
RN2201,
RN2202,
RN2203
RN2204,
RN2205,
RN2206
RN1201
RN1206
RN2201
transistor 2204
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TRANSISTOR MARKING YB
Abstract: RN2901 RN2902 RN2903 RN2904 RN2905 RN2906 TRANSISTOR MARKING TE US6
Text: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)
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RN2901-RN2906
RN2901,
RN2902,
RN2903,
RN2904,
RN2905,
RN2906
RN1901-RN1906
RN2901
RN2902
TRANSISTOR MARKING YB
RN2903
RN2904
RN2905
RN2906
TRANSISTOR MARKING TE US6
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2010,RN2011 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design
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RN2010
RN2011
RN2010,
RN1010,
RN1011
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YC 2604
Abstract: toshiba Yb YC+2604
Text: TOSHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN2601
RN2606
RN2601,
RN2602,
RN2603,
RN2604,
RN2605,
RN1601
RN1606
YC 2604
toshiba Yb
YC+2604
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2401,RN2402,RN2403,RN2404,RN2405,RN2406 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • W ith Bu ilt- in B ia s Resistors
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RN2401
RN2402
RN2403
RN2404
RN2405
RN2406
RN2401,
RN2402,
RN2403
RN2404,
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toshiba pnp rn
Abstract: RN2314-RN2318
Text: RN2314-RN2318 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2314, RN2315, RN2316, RN2317, RN2318 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2.1 + 0 1 .1.25+0.1 • W ith Built-in Bias Resistors
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RN2314-RN2318
RN2314,
RN2315,
RN2316,
RN2317,
RN2318
RN1314
RN1318
RN2314
RN2315
toshiba pnp rn
RN2314-RN2318
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •
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RN4610
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4986 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 (Ultra Super Mini Type
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RN4986
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4985 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • 2.1 • Including Two Devices in US6 (Ultra Super Mini Type
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RN4985
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LM 1709
Abstract: No abstract text available
Text: TOSHIBA RN2707-RN2709 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2707, RN2708, RN2709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1 .2 5 1 0 .1 -m- » 1 - 1— • t !
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RN2707-RN2709
RN2707,
RN2708,
RN2709
RN2707
RN2708
LM 1709
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2307-RN2309 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2307, RN2308, RN2309 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 2.1 ¿ 0.1 • • • • 1.25±0.1 With Built-in Bias Resistors
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RN2307-RN2309
RN2307,
RN2308,
RN2309
RN1307
RN2307
RN2308
SC-70
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2607 transistor
Abstract: 26-07 transistor 2609 N2609
Text: TOSHIBA R N 2607-R N 2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)
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2607-R
RN2607,
RN2608,
RN2609
RN1607--RN1609
RN2607
RN2608
2607 transistor
26-07 transistor
2609
N2609
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RN25U
Abstract: No abstract text available
Text: TOSHIBA RN2501-RN2506 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2501, RN2502, RN2503, RN2504, RN2505, RN2506 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm Including Two Devices in SMV (Super Mini Type with 5 leads)
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RN2501-RN2506
RN2501,
RN2502,
RN2503,
RN2504,
RN2505,
RN2506
RN1501-RN1506
RN2501
RN2502
RN25U
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