TOSHIBA MG200Q2YS40 Search Results

TOSHIBA MG200Q2YS40 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

TOSHIBA MG200Q2YS40 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Toshiba MG200Q2YS40 Abstract: No abstract text available Text: TOSHIBA MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mf i ?nnn?Y<; z Ln Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -F ast-o n Tab #110 High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage	OCR Scan	MG200Q2YS40 2-109C1A Toshiba MG200Q2YS40	PDF
Toshiba MG200Q2YS40 Abstract: LT-15V MG200Q2YS40 YS40 OHS03 JE transistor Text: TOSHIBA MG200Q2YS40 M G 2 0 0 Q 2 YS4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4 -F ast-on Tab #110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)	OCR Scan	MG200Q2YS40 MG200Q2 2-109C1A Toshiba MG200Q2YS40 LT-15V MG200Q2YS40 YS40 OHS03 JE transistor	PDF
Toshiba MG200Q2YS40 Abstract: MG200Q2YS40 Text: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)	Original	MG200Q2YS40 2-109C1A Toshiba MG200Q2YS40 MG200Q2YS40	PDF
MG200Q2YS40 Abstract: Toshiba MG200Q2YS40 Text: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max)	Original	MG200Q2YS40 2-109C1A MG200Q2YS40 Toshiba MG200Q2YS40	PDF
Toshiba MG200Q2YS40 Abstract: MG200Q2YS40 Text: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode	Original	MG200Q2YS40 2-109C1A Toshiba MG200Q2YS40 MG200Q2YS40	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage	OCR Scan	MG200Q2YS40 2-109C1A	PDF
Z1506 Abstract: Toshiba MG200Q2YS40 Text: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage	OCR Scan	MG200Q2YS40 2-109C1A Z1506 Toshiba MG200Q2YS40	PDF
MG75J2YS40 Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44 Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40	OCR Scan	E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG75J2YS40 MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 20L6P44 MG150J2YS45 10L6P44	PDF
MG200J2YS21 Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45 Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9	OCR Scan	MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J2YS91 MG100J6ES1 MG100J6ES40 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG200J2YS21 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG150J2YS40 mig25Q901 MG75J2YS45	PDF
K643 Abstract: mg200q2 Toshiba MG200Q2YS40 GE647 Text: TO SH IBA MG200Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGEST MG200Q2YS40 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • 4 - Fast -on Tab #110 High Input Impedance H ig h sp eed tf=0.5/<s Max.	OCR Scan	MG200Q2YS40 2-109C1A K643 mg200q2 Toshiba MG200Q2YS40 GE647	PDF
IGBT cross reference semikron eupec Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40 Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130	Original	DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40	PDF
IGBT cross reference semikron eupec Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40 Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130	Original	DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40	PDF
TOSHIBA IGBT Abstract: failure-rate Toshiba MG200Q2YS40 igbt based high frequency inverter Text: . 1 IGBT Derating at Elevated Case-Temperature range 5-1 5 khz with some applications operating to beyond 20 khz. At these frequencies switching-losses are significant and must be conside red during device selection. To assist in calcula ting device derating at normal operating	OCR Scan	MG200Q2YS40 30V2YS4O V11S41 TOSHIBA IGBT failure-rate Toshiba MG200Q2YS40 igbt based high frequency inverter	PDF