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    TOSHIBA MARKING CODE TRANSISTOR K15A50D Search Results

    TOSHIBA MARKING CODE TRANSISTOR K15A50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    K15A50D

    Abstract: transistor K15a50d tk15a50d toshiba K15A50D toshiba marking code transistor k15a50d TK15A50 k15a50 TK15A k15a5 K*A50D
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original     		TK15A50D K15A50D transistor K15a50d tk15a50d toshiba K15A50D toshiba marking code transistor k15a50d TK15A50 k15a50 TK15A k15a5 K*A50D PDF

    transistor K15a50d

    Abstract: No abstract text available
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original     		TK15A50D transistor K15a50d PDF

    K*A50D

    Abstract: k15a50
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original     		TK15A50D K*A50D k15a50 PDF

    K15A50D

    Abstract: transistor K15a50d TK15A50D K15A50 TK15A50 TCH600 TK15A K*A50D toshiba 2010 3 toshiba K15A50D
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original     		TK15A50D K15A50D transistor K15a50d TK15A50D K15A50 TK15A50 TCH600 TK15A K*A50D toshiba 2010 3 toshiba K15A50D PDF