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    TOSHIBA K4115 Search Results

    TOSHIBA K4115 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K4115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4115 toshiba

    Abstract: No abstract text available
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOS 2SK4115 Switching Regulator Applications Unit: mm • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 1.0 Rating Unit Drain-source voltage


    Original     		PDF 2SK4115 491led K4115 toshiba

    K4115 toshiba

    Abstract: TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65

    TRANSISTOR K4115

    Abstract: No abstract text available
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 TRANSISTOR K4115

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65

    K4115 toshiba

    Abstract: k4115 toshiba k4115 2SK4115 2SK4115* equivalent SC-65
    Text: 2SK4115 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK4115 ○ スイッチングレギュレータ用 単位: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. : RDS (ON) = 1.6 Ω (標準) z オン抵抗が低い。 : IDSS = 100 A (最大) (VDS = 720 V)


    Original     		PDF 2SK4115 K4115 toshiba k4115 toshiba k4115 2SK4115 2SK4115* equivalent SC-65

    k4115

    Abstract: K4115 toshiba 2SK4115 toshiba k4115 2SK4115* equivalent SC-65 2SK4115,K4115, 2SK4115(F)
    Text: 2SK4115 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK4115 ○ スイッチングレギュレータ用 単位: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. : RDS (ON) = 1.6 Ω (標準) z オン抵抗が低い。 : IDSS = 100 A (最大) (VDS = 720 V)


    Original     		PDF 2SK4115 k4115 K4115 toshiba 2SK4115 toshiba k4115 2SK4115* equivalent SC-65 2SK4115,K4115, 2SK4115(F)