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    TOSHIBA K4108 Search Results

    TOSHIBA K4108 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

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    K4108

    Abstract: toshiba k4108 2SK4108 transistor k4108
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		PDF 2SK4108 K4108 toshiba k4108 2SK4108 transistor k4108

    toshiba k4108

    Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		PDF 2SK4108 toshiba k4108 K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK4108 150lled toshiba k4108 k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65
    Text: 2SK4108 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 14 S (標準)


    Original     		PDF 2SK4108 SC-65 2-16C1B toshiba k4108 k4108 2SK4108 toshiba 2sk4108 SC-65