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    TOSHIBA K3880 Search Results

    TOSHIBA K3880 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K3880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk3880

    Abstract: No abstract text available
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 2sk3880

    k3880

    Abstract: No abstract text available
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 k3880

    K3880

    Abstract: 2SK3880
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 2SK3880

    Untitled

    Abstract: No abstract text available
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880

    K3880

    Abstract: 2SK3880 diode marking 1200
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 2SK3880 diode marking 1200

    K3880

    Abstract: 2SK3880 toshiba K3880
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 2SK3880 toshiba K3880

    K3880

    Abstract: toshiba K3880
    Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK3880 K3880 toshiba K3880

    K3880

    Abstract: 2SK3880 toshiba K3880
    Text: 2SK3880 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3880 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.2S (標準)


    Original     		PDF 2SK3880 10VID 2-16F1B K3880 2SK3880 toshiba K3880

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF