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    TOSHIBA K2916 Search Results

    TOSHIBA K2916 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K2916 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2916

    Abstract: 2SK2916
    Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.)


    Original     		PDF 2SK2916 K2916 2SK2916

    K2916

    Abstract: TOSHIBA K2916 2SK2916
    Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)


    Original     		PDF 2SK2916 K2916 TOSHIBA K2916 2SK2916

    K2916

    Abstract: No abstract text available
    Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)


    Original     		PDF 2SK2916 K2916

    2SK2916

    Abstract: K2916
    Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)


    Original     		PDF 2SK2916 2SK2916 K2916

    K2916

    Abstract: TOSHIBA K2916 2SK2916
    Text: 2SK2916 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2916 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.35Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK2916 10VID 2-16F1B K2916 2002/95/EC) K2916 TOSHIBA K2916 2SK2916

    K2916

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2916 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2916 IGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.8±0.5 • • •


    OCR Scan     		PDF 2SK2916 K2916

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2916 T O SH IB A FIELD EFFECT TR A N SISTO R SILICO N N C H A N N E L M OS T Y P E tt-M O S V 2SK2916 IGH SPEED, HIGH V O LT A G E SW ITCH IN G A PP LIC A TIO N S D C-D C CO N V ER TER , R E LA Y DRIVE A N D M O TO R DRIVE A PP LIC A TIO N S


    OCR Scan     		PDF 2SK2916