Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA K2544 Search Results

    TOSHIBA K2544 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K2544 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2544

    Abstract: transistor k2544 K2544 Transistor 2-10P1B 2SK2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


    Original
    PDF 2SK2544 K2544 transistor k2544 K2544 Transistor 2-10P1B 2SK2544

    K2544

    Abstract: transistor k2544 K2544 Transistor TOSHIBA K2544 DR-6 2-10P1B 2SK2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)


    Original
    PDF 2SK2544 K2544 transistor k2544 K2544 Transistor TOSHIBA K2544 DR-6 2-10P1B 2SK2544

    K2544

    Abstract: transistor k2544 2SK2544 2-10P1B
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


    Original
    PDF 2SK2544 K2544 transistor k2544 2SK2544 2-10P1B

    K2544

    Abstract: transistor k2544 TOSHIBA K2544 K2544 Transistor 2-10P1B 2SK2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


    Original
    PDF 2SK2544 K2544 transistor k2544 TOSHIBA K2544 K2544 Transistor 2-10P1B 2SK2544

    TOSHIBA K2544

    Abstract: transistor k2544 k2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)


    Original
    PDF 2SK2544 TOSHIBA K2544 transistor k2544 k2544