Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TD62382AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AFN 8 LO W INPUT A C TIV E DARLIN GTON SINK DRIVER The TD62382AFN is non-inverting transistor array which is comprised of eight Low saturation output stages and PNP
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OCR Scan
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TD62382AFN
TD62382AFN
SSOP18
/50mA
--50mA
SSOP18-P-225-0
65TYP
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PDF
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TD62001AP CIRCUIT
Abstract: TD62004AP TD62001 TD62001AF TD62001AP TD62001F TD62001P TD62002AF TD62002AP TD62002F
Text: TOSHIBA TD62001-004P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62001P, TD62001AP, TD62001F, TD62001AF, TD62002P, TD62002AP, TD62002F TD62002AF, TD62003P, TD62003AP, TD62003F, TD62003AF, TD62004P, TD62004AP TD62004F, TD62004AF
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OCR Scan
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TD62001
004P/AP/F/AF
TD62001P,
TD62001AP,
TD62001F,
TD62001AF,
TD62002P,
TD62002AP,
TD62002F
TD62002AF,
TD62001AP CIRCUIT
TD62004AP
TD62001
TD62001AF
TD62001AP
TD62001F
TD62001P
TD62002AF
TD62002AP
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PDF
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TD62308APA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62308APA 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62308APA is non-inverting transistor array w hich is comprised o f fo u r NPN d a rlin gto n o u tp u t stages and PNP
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OCR Scan
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TD62308APA
TD62308APA
DIP16-P-300-2
toshiba gto
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SGR3500GXH29 TOSHIBA GATE TURN-OFF THYRISTOR LOWER LOSS, REVERSE CONDUCTING TYPE TENTATIVE SGR3500GXH29 INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current R.M.S Reverse Current Peak Turn-Off Current
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OCR Scan
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SGR3500GXH29
--3500A
--3000A
--30A
600mA
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PDF
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Untitled
Abstract: No abstract text available
Text: t¡ T O S H I B A -CDISCRETE/OPTO> 9097250 TOSHIBA CDIS C R E T E /OPTO SEMICONDUCTOR dFI^gtosd 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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OCR Scan
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100nA
300uA
00A/ys
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1314-RN1318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1314, RN1315f RN1316, RN1317, RN1318 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN1314-RN1318
RN1314,
RN1315f
RN1316,
RN1317,
RN1318
RN2314--RN2318
RN1314
RN1316
RN1317
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PDF
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5393
Abstract: CG 09G TA75393 TA75393F TA75393P TA75393P equivalent dip-8p
Text: TOSHIBA TA7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single
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OCR Scan
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TA75393P,
TA75393PA,
TA75393S,
TA75393F,
TA75393FB
98TYR
78MAX
OP8-P-225-1
595TYP
5393
CG 09G
TA75393
TA75393F
TA75393P
TA75393P equivalent
dip-8p
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PDF
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SGRB000GXH26
Abstract: 4500V 900A GTO thyristor 4500V 4000A
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)
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OCR Scan
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SGRB000GXH26
SGR3000GXH26)
SGRB000GXH26
4500V 900A
GTO thyristor 4500V 4000A
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PDF
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rs 1023
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 21 0 0 G X H H 2 2 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV “ 2100A Double Side Cooling
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OCR Scan
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2100GXHH22
--4500V
961001EAA1
rs 1023
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PDF
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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OCR Scan
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1200GXHH23
961001EAA1
toshiba gto
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PDF
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toshiba gto
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling
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OCR Scan
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1200GXHH25
--4500V
961001EAA1
--2500A,
toshiba gto
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS
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OCR Scan
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1200GXHH24
961001EAA1
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ407 TOSHIBA FIELD EFFECT TRANSISTOR 3 <; SILICON P CHANNEL MOS TYPE tt-MOSV I ¿ L Î 1 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •
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OCR Scan
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2SJ407
--200V)
----50V,
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent
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OCR Scan
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SG3000GXH29
SG3000GXH29)
SG3000GXH29
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PDF
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toshiba gto
Abstract: SGR3000GXH28 GTO thyristor 4500V 4000A GTO 100A 500V 4500V 900A 100a 1000v GTO GTO 10A 500V
Text: TOSHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • • • • • • • Repetitive Peak Off-State Voltage VDRM —4500V Note 1 R.M.S On-State Current lT ( R M S ) = 1200A(Tf=77°C)
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OCR Scan
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SGR3000GXH28
diGQ/dt-40
toshiba gto
SGR3000GXH28
GTO thyristor 4500V 4000A
GTO 100A 500V
4500V 900A
100a 1000v GTO
GTO 10A 500V
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PDF
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SG3000GXH29
Abstract: SG3000GXH 13-108D1A
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG3000GXH29 DATA SG3000GXH29 INVERTER APPLICATION U nit in mm 2 - 0 3.5 ± 0.2 Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State C urrent : It (RMS)= 1200A Peak Turn-Off C urrent
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OCR Scan
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SG3000GXH29
SG3000GXH29)
SG3000GXH29
SG3000GXH
13-108D1A
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PDF
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4500v
Abstract: SG3000GXH23G SG3000GXH29
Text: TOSHIBA TENTATIVE SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VdRM = 4500V R.M.S On-State Current IT RMS = 1200A Peak Turn-Off Current ItGQM —3000A Critical Rate of Rise of On-State Current : di/dt = 400A/ jus
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OCR Scan
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SG3000GXH23G
00A//Â
000V//Â
10ms-Width
sg3000gxh29.
4500v
SG3000GXH23G
SG3000GXH29
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PDF
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toshiba gto
Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Text: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)
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OCR Scan
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SGR3000GXH26
toshiba gto
GTO 100A 500V
gto 100A
GTO thyristor
SGR3000GXH26
300a 1500v thyristor
300a 1000v thyristor
100a 1000v GTO
GTO thyristor 4500V 4000A
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PDF
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SG3000GXH29
Abstract: LT10
Text: TOSHIBA SG3000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH29 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di/dt= 400A / jus
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OCR Scan
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SG3000GXH29
SG3000GXH29
LT10
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PDF
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100WPEP
Abstract: Ferrite core TDK D1S1555
Text: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p
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OCR Scan
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2SC2879
2-30MHZ
28MHz
100Wp
--24dB
1S1555
961001E
100WPEP
Ferrite core TDK
D1S1555
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG4000GXH29 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG4000GXH29 Unit in mm Repetitive Peak Off-State Voltage V d RM = 4500V R.M.S On-State Current *T RMS = 1900A Peak Turn-Off Current IT G Q M = 4000A Critical Rate of Rise of On-State Current : d i/d t = 500A/ jus
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OCR Scan
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SG4000GXH29
000V///S
ITM-4000A,
--10V,
SG4000GXH28.
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Unit in mm Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A i T G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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OCR Scan
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SG3000GXH23
000V//
--25A,
ITGQ-3000A,
SG3000GXH29.
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PDF
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SG3000GXH29
Abstract: No abstract text available
Text: TOSHIBA SG3000GXH23G TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE SG3000GXH23G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 4500V R.M.S On-State Current iT RMS = 1200A IT G Q M = 3000A Peak Turn-Off Current Critical Rate of Rise of On-State Current : d i/d t = 400A/ /us
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OCR Scan
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SG3000GXH23G
000V//
--25A,
SG3000GXH29.
SG3000GXH29
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PDF
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str 6307
Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
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Original
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ST1200FXF21
500-V,
000-A
300-V,
200-A
str 6307
str 6307 datasheet
STR 6307 POWER
sg6105dz
Toshiba IGBT 1200A 3300V
toshiba gto
TOSHIBA IGBT snubber
STR S 6307
toledo
TOSHIBA str module
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PDF
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