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    TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Search Results

    TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.


    Original     		PDF JDP4P02U

    JDP4P02U

    Abstract: No abstract text available
    Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.


    Original     		PDF JDP4P02U JDP4P02U

    JDP4P02U

    Abstract: No abstract text available
    Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. · Low capacitance: CT = 0.3 pF typ.


    Original     		PDF JDP4P02U JDP4P02U

    JDP2S05FS

    Abstract: 042PF
    Text: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. 0.1 Characteristics Symbol Rating


    Original     		PDF JDP2S05FS JDP2S05FS 042PF

    Untitled

    Abstract: No abstract text available
    Text: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. 0.1 Characteristics Symbol Rating


    Original     		PDF JDP2S05FS

    JDP2S08SC

    Abstract: No abstract text available
    Text: JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit:mm UHF~VHF Band RF Switch Applications Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S08SC JDP2S08SC

    Untitled

    Abstract: No abstract text available
    Text: 1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 Unit in mm High Voltage Switching Applications Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF 2 = 0.90V (typ.)


    Original     		PDF 1SS403 100mA

    1ss403

    Abstract: No abstract text available
    Text: 1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 Unit in mm High Voltage Switching Applications Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF 2 = 0.90V (typ.)


    Original     		PDF 1SS403 1ss403

    1SV312

    Abstract: No abstract text available
    Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.


    Original     		PDF 1SV312 1SV312

    Untitled

    Abstract: No abstract text available
    Text: JDP2S02AFS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AFS UHF~VHF Band RF Switch Applications Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02AFS

    Untitled

    Abstract: No abstract text available
    Text: JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02AS

    1SV237

    Abstract: No abstract text available
    Text: TOSHIBA_ 1SV237 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 237 Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance


    OCR Scan     		PDF 1SV237 1SV237

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA JDP2S01U TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01U UHF-VHF BAND RF ATTENUATOR APPLICATIONS Unit in mm Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. + 0.2 1.25-0.1 1-1 Low Capacitance


    OCR Scan     		PDF JDP2S01U

    HP4291A

    Abstract: JDP2S01T
    Text: TOSHIBA JDP2S01T JDP2S01T TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.


    OCR Scan     		PDF JDP2S01T HP4291A HP4291A JDP2S01T

    toshiba diode 1A

    Abstract: 1SV307 HP4291A
    Text: 1SV307 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 307 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = 1.10 Typ. : Or = 0.3pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 1SV307 HP4291A toshiba diode 1A 1SV307 HP4291A

    Untitled

    Abstract: No abstract text available
    Text: 1SS403 TOSHIBA TENTATIVE TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS403 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS Two-pin small packages are suitable for higher mounting densities. Excellent in Forward Current and Forward Voltage Characteristics : V f 2 = 0.90 V (Typ.)


    OCR Scan     		PDF 1SS403

    1SV312

    Abstract: No abstract text available
    Text: 1SV312 TOSHIBA 1 SV3 1 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS 2.1 ± 0.1 • • Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. Low Capacitance


    OCR Scan     		PDF 1SV312 1SV312

    1SS402

    Abstract: No abstract text available
    Text: 1SS402 TOSHIBA TOSHIBA DIODE TENTATIVE HIGH SPEED SWITCHING APPLICATIONS SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS402 Unit in mm 2.1 ± 0.1 • • • • Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.


    OCR Scan     		PDF 1SS402 1SS402

    Untitled

    Abstract: No abstract text available
    Text: 1SV307 TOSHIBA 1 S V3 0 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE VHF TUNER BAND SWITCH APPLICATIONS • • Small Package Low Series Resistance Small Total Japacitance : rs = l .i n (Typ. : = O.üpi1' (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 1SV307 --30V 95emiconductor

    Toshiba bridge diode

    Abstract: TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
    Text: 1SV172 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE U V 1 7 ? VHF-UHF BAND RF ATTENUATOR APPLICATIONS. MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT 50 V V 50 mA If 125 °C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


    OCR Scan     		PDF 1SV172 --50V 100MHz Toshiba bridge diode TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE

    1SV307

    Abstract: HP4291A
    Text: 1SV307 TOSHIBA 1 SV3 0 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = l.lO Typ. : Or = 0.3pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 1SV307 HP4291A 1SV307 HP4291A

    Untitled

    Abstract: No abstract text available
    Text: 1SS402 TOSHIBA TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS 1 SS402 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ± 2.1 0.1 • • • • Two ind.0p6i1d.6i1t diodes s.re mounted on four-pin ultra-small packages that are suitable for higher mounting densities.


    OCR Scan     		PDF 1SS402 SS402

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV308 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 <:\/ 5ns VHF TUNER BAND SWITCH APPLICATIONS Unit in mm • Sm all Package • Low Series Resistance : r^= l . l f l Typ. • Sm all Total Capacitance : C^ —Ö.SpF (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV308 --30V

    PF7A

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA TOSHIBA DIODE 1 SILICON EPITAXIAL PIN TYPE 51 Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


    OCR Scan     		PDF 1SV252 SC-70 100MHz PF7A