TOSHIBA C5198 AMPLIFIER Search Results

TOSHIBA C5198 AMPLIFIER Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC5198		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TOSHIBA C5198 AMPLIFIER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5198 Abstract: Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 C5198 transistor equivalent 2SA1941 Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	Original	2SC5198 2SA1941 C5198 Toshiba transistor c5198 c5198 transistor 2SC5198 Toshiba transistor 2SC5198 ToshibA C5198 Toshiba 2sc5198 toshiba c5198,003 C5198 transistor equivalent 2SA1941	PDF
Toshiba transistor c5198 Abstract: C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198 Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	Original	2SC5198 2SA1941 2-16C1A Toshiba transistor c5198 C5198 toshiba c5198 Amplifier c5198 transistor ToshibA C5198	PDF
Toshiba transistor c5198 Abstract: C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198 Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	Original	2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 transistor Toshiba transistor 2SC5198 transistor C5198 toshiba c5198 Amplifier toshiba c5198 70w amplifier transistor Toshiba C5198 2SC5198	PDF
Toshiba transistor c5198 Abstract: C5198 c5198 sample circuit toshiba c5198 2sa1941 2SC5198 c5198 transistor 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198 Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	Original	2SC5198 2SA1941 Toshiba transistor c5198 C5198 c5198 sample circuit toshiba c5198 2sa1941 2SC5198 c5198 transistor 2SC5198 application notes toshiba c5198 Amplifier Toshiba transistor 2SC5198	PDF
Toshiba transistor c5198 Abstract: No abstract text available Text: 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V min • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage	Original	2SC5198 2SA1941 Toshiba transistor c5198	PDF