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    TOSHIBA 355-1 POWER TRANSISTOR Search Results

    TOSHIBA 355-1 POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 355-1 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)


    Original     		PDF TK72A12N1 O-220SIS

    12vdc motor forward reverse control diagram

    Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
    Text: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)


    Original     		PDF TK72A12N1 O-220SIS

    TK72A

    Abstract: No abstract text available
    Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)


    Original     		PDF TK72A12N1 O-220SIS TK72A

    TJ70A06J3

    Abstract: TJ70A06 J70A06J
    Text: TJ70A06J3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TJ70A06J3 Chopper Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm • Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF TJ70A06J3 TJ70A06J3 TJ70A06 J70A06J

    Untitled

    Abstract: No abstract text available
    Text: TPH1R403NL MOSFETs Silicon N-channel MOS U-MOS-H TPH1R403NL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V)


    Original     		PDF TPH1R403NL

    Untitled

    Abstract: No abstract text available
    Text: TPH1R403NL MOSFETs Silicon N-channel MOS U-MOS-H TPH1R403NL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 10.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.7 mΩ (typ.) (VGS = 4.5 V)


    Original     		PDF TPH1R403NL

    transistor 91 330

    Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
    Text: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 SM8143 NK0001CE transistor 91 330 Circuit diagram of LDR ldr 10k NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16

    transistor 91 330

    Abstract: NIPPON CAPACITORS
    Text: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 NK0001BE CIRCUITS--19 transistor 91 330 NIPPON CAPACITORS

    transistor 91 330

    Abstract: toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143 SM8143A
    Text: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW The SM8143 has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 SM8143 80cm2 NK0001AE CIRCUITS--19 transistor 91 330 toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143A

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    DSLAM configuration nokia siemens networks

    Abstract: Kostal connector how to program Siemens cash power meter organizational structure chart of samsung company 0 261 230 099 bosch sensor bosch 0 261 230 099 Toshiba 355-1 power transistor PLC siemens LOGO BOSCH DOCUMENTS 0 611 241 708 Toshiba 355-1
    Text: FININ: 63743 COV 1 R. R. DONNELLEY FRK •• Infineon Technolog. LON00000/00171 (LOGO) 3.8.7 p21 Pro (English) AOG ps 011 49 69 170 88 355 09 MAR 00 01:37 Infineon Technologies AG Ordinary Registered Shares in the form of Shares or American Depositary Shares


    Original     		PDF LON00000/00171 DSLAM configuration nokia siemens networks Kostal connector how to program Siemens cash power meter organizational structure chart of samsung company 0 261 230 099 bosch sensor bosch 0 261 230 099 Toshiba 355-1 power transistor PLC siemens LOGO BOSCH DOCUMENTS 0 611 241 708 Toshiba 355-1

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    TB1238AN

    Abstract: IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P
    Text: ASSPs Audio & Video Equipment ICs z 62 Communications Equipment ICs z 85 High-Frequency Power Amp ICs z 88 Automotive ICs z 89 Display Driver ICs z 92 Network & Interface ICs z 95 Peripheral Equipment LSIs z 96 Digital Temperature Compensation ICs z 97 Other Consumer Product ICs & LSIs z 98


    Original     		PDF TMPA8812CxDNG TMPA8821CxNG TMPA8823CxNG TMPA8827CxNG TMPA8829CxNG TMPA8857CxNG TMPA8859CxNG TMPA8812PSNG P-SDIP56-600-1 TMPA8821PSNG TB1238AN IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P

    2SC2753

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 M AX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2= 16dB f = 500MHz NF = 1.7dB, |S2lel2= 10.5dB (f = 1GHz)


    OCR Scan     		PDF 2SC2753 500MHz) 55MAX. SC-43 961001EAA2' 2SC2753

    2SK1865

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1865 Field Effect Transistor Silicon N Channel MOS Type rc-MOS 111.5 Industrial Applications Unit in mm High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0 .5 5 ii (Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1865 2SK1865

    MG100M2CK1

    Abstract: No abstract text available
    Text: TD TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA DISCRETE/OPTO D Ë Ï T O T O S O ODlbBMS 1 90D 16345 Ü B SEMICONDUCTOR Dp-33-35- TOSHIBA G-TR MODULE M G I 0 0 M 2 C K 1 SILICON NPN TRIPLE DIFFUSED TYPE J U S TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF -CDISCRETE/0PT03- Dp-33-35- Collector-25 EGA-MG100M2CK1-4 -CDISCRETE/0PT03r~ DDltj34T lb35Q MG100M2CK1

    tc51864

    Abstract: No abstract text available
    Text: TOSHIBA T C 5 1 8 6 4 P L /F L S 5 /1 0 PRELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The


    OCR Scan     		PDF TC51864PL TC51864PL/FL-85/10 002b4Ã tc51864

    Untitled

    Abstract: No abstract text available
    Text: 2SC3099 5ILIC0N NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q5 ;'.h -0.3 • •t 0.25 Low Noise Figure. I'. 1 'i N F = 1.7dB, |S21e|2= 15dB f= 500MHz N F = 2.5dB, 3 |S21el2 = 9 .5 d B (f= lG H z )


    OCR Scan     		PDF 2SC3099 500MHz) S21el2 SC-59

    schematic diagram motor controller 24v

    Abstract: No abstract text available
    Text: TA8415P STEPPING MOTOR CONTROLLER/DRIVER TA8415P is general purpose unipolar stepping motor controller/driver,applicable to 3/4 phase motors and 1, 1-2, 2 phase excitation drive by initial setting of control terminals. . 1 chip stepping motor controller/driver.


    OCR Scan     		PDF TA8415P TA8415P TD62308BP TD62308BP schematic diagram motor controller 24v

    TA7666

    Abstract: TA7666P TC9165P TC9165 ic level audio meter LED LEVEL METER DRIVER ta-7666-p TA7667P
    Text: ÿwniw > -A*»«»- TOSHIBA i ELECTRONIC DE DE 47 0D 1Ö1 33 5 T - 77-Z.I ìVrYTfr.Vr*' fi'li:iir^iV"i' ^BS3má£átíi¿í&¿ TAPE RECORDED MUSIC AUTOMATIC SELECTING IC 5 MUSIC SELECTION Unit in mm The TC9165P is an IC for automatic music selection for tape recorders.* This IC has the built-in


    OCR Scan     		PDF TC9165P TC9165P T-77-21 470kfl TA7666 TA7666P TC9165 ic level audio meter LED LEVEL METER DRIVER ta-7666-p TA7667P

    MG25H2YS1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG25H2YS1 HIGH P OWER S W I T C H I N G APPLICATIONS. Unit in mm M O T O R CONT R O L APPLICATIONS. 3 - M5 FEATURES: . High Input Impedance . High Speed : tf = 1. Ons Max. trr=0. 5m s (Max.) . Low Saturation Voltage : V c e (sat)=5.OV(Max.)


    OCR Scan     		PDF MG25H2YS1 MG25H2YS1

    TC5816AFT

    Abstract: No abstract text available
    Text: TOSHIBA TC 5816A D C 16Mbit 2M X 8 BIT CMOS NAND EEPROM PRELIMINARY Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programma­ ble Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a


    OCR Scan     		PDF 16Mbit TC5816 TC5816AFT

    op07 oscillator

    Abstract: stk 014 dmb01 ESID QFP64 SDIP64 TLCS-470 TMP47C006E TMP47C1260F TMP47C1260N
    Text: TOSHIBA TMP47C1260/1660/006 CMOS 4-BIT MICROCONTROLLER TMP47C1260N, TMP47C1660N TMP47C1260F, TMP47C1660F The 47C1260/1660 are the high speed and high performance 4-bit single chip microcomputer, with large capacity ROM and RAM, based on the 47C660/860 {TLCS-470 series .


    OCR Scan     		PDF TMP47C1260/1660/006 TMP47C1260N, TMP47C1660N TMP47C1260F, TMP47C1660F 47C1260/1660 47C660/860 TLCS-470 TMP47C1260N SDIP64 op07 oscillator stk 014 dmb01 ESID QFP64 SDIP64 TMP47C006E TMP47C1260F