2SK2056
Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII
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2SJ147
O-220IS
2SJ183
2SJ200
2SJ201
2SJ224
O-220FL/SM
2SJ238
2SJ239
2SJ240
2SK2056
2SK1603
2SK1723
2sk1377
transistor 2SK1603
2SK2146
2SK2351
MOSFET 2sk1357
transistor 2sk1213
2SK2402
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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k2313
Abstract: 2SK2313
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) High forward transfer admittance
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2SK2313
k2313
2SK2313
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k2313
Abstract: 2sk2313 L-398 toshiba 2sk2313
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) High forward transfer admittance
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2SK2313
k2313
2sk2313
L-398
toshiba 2sk2313
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k2313
Abstract: 2SK2313
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance
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2SK2313
k2313
2SK2313
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k2313
Abstract: No abstract text available
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance
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2SK2313
k2313
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K2313
Abstract: 2SK2313 toshiba 2sk2313
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance
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2SK2313
K2313
2SK2313
toshiba 2sk2313
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k2313
Abstract: 2SK2313 toshiba 2sk2313
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admittance
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2SK2313
k2313
2SK2313
toshiba 2sk2313
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K2313
Abstract: 2SK2313
Text: 2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) l High forward transfer admittance
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2SK2313
K2313
2SK2313
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tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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RFP6N50
RFD16N03LSM
RFP15N05L
RFP50N05
RFP15N05
RFP50N05L
RFD14N05L
RFD14N05LSM
RFD14N05SM
RFP14N05L
IRF540 complementary
IRFZ44N complementary
std2n52
TOSHIBA IRFZ44A datasheet
STP2NA60
SSH6N80
rfp60n06
ste38na50
IRF630 complementary
IRF3205 IR
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k2313
Abstract: toshiba 2sk2313 2SK2313 SC-65 30n15 sk2313
Text: TOSHIBA 2SK2313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2313 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5.9 M A X.
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OCR Scan
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2SK2313
10msX
k2313
toshiba 2sk2313
2SK2313
SC-65
30n15
sk2313
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PDF
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k2313
Abstract: L398H k231
Text: TOSHIBA 2SK2313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2313 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 15.9 MAX.
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OCR Scan
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2SK2313
--60A,
k2313
L398H
k231
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PDF
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toshiba 2sk2313
Abstract: No abstract text available
Text: TOSHIBA 2SK2313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 M A X. 03.2 + 0.2
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OCR Scan
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2SK2313
20kf2)
--60A,
--25V,
--33S/iH
toshiba 2sk2313
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L 2-tt-M O SV (2SK2313) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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OCR Scan
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2SK2313
2SK2313)
100/j
2SK2313
398//H
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PDF
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transistor 2sk
Abstract: transistor+2sk
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2313 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK 2313) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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OCR Scan
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2SK2313
100/j
2SK2313
398//H
transistor 2sk
transistor+2sk
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PDF
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k2313
Abstract: toshiba 2sk2313 2SK2313 SC-65 2SK23
Text: TO SH IBA 2SK2313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2313 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 Í Q MAY
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OCR Scan
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2SK2313
k2313
toshiba 2sk2313
2SK2313
SC-65
2SK23
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2313 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2- tt-M O S V 2 S K2 3 1 3 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS
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OCR Scan
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2SK2313
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PDF
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Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
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OCR Scan
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T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
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PDF
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k2313
Abstract: 2SK2313 SC-65 HT-200
Text: TOSHIBA 2SK2313 T O S H IB A FIELD EFFECT TR A N SISTO R SILICO N N C H A N N E L M O S TYPE L2-? r -M O S V 2SK2313 H IG H SPEED, H IG H CU R R EN T S W IT C H IN G A P P L IC A T IO N S CHOPPER R EG U LA TO R , D C -D C C O N V E R TE R A N D M O T O R DRIVE
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OCR Scan
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2SK2313
k2313
SC-65
HT-200
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PDF
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