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    TOPR 150 PHOTODIODE TRANSISTOR Search Results

    TOPR 150 PHOTODIODE TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    TOPR 150 PHOTODIODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active


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    PDF S3901/S3904-F SE-171 KMPD1003E03

    S3903

    Abstract: 512F S3901-256F S3901-512F S3904-1024F S3904-512F S3904-F
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active


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    PDF S3901/S3904-F SE-171 KMPD1003E03 S3903 512F S3901-256F S3901-512F S3904-1024F S3904-512F S3904-F

    TRI-1.25-6

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904-F series NMOS linear image sensors with fiber optic windows NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active


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    PDF S3901/S3904-F SE-171 KMPD1003E04 TRI-1.25-6

    1BW TRANSISTOR

    Abstract: S4828 transistor 1BW transistor 1BW 57 KPCB0007EA KPIC1035E01 S4827 SE-171 transistor uw
    Text: PHOTO IC Photo IC S4827, S4828 Subminiature package S4827 and S4828 are photo ICs comprised of a high-sensitivity photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated into a single chip and molded with visible-cut resin into a subminiature package.


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    PDF S4827, S4828 S4827 S4828 S4827: S4828: SE-171 KPIC1035E01 1BW TRANSISTOR transistor 1BW transistor 1BW 57 KPCB0007EA KPIC1035E01 transistor uw

    Untitled

    Abstract: No abstract text available
    Text: PHOTO IC Low-voltage operation photo IC S6289 Operation at low voltage from 2.2 V The S6289 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.


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    PDF S6289 S6289 SE-171 KPIC1005E05

    S4810

    Abstract: hl 05
    Text: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.


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    PDF S4810-100 S4810-100 SE-171 KPIC1072E02 S4810 hl 05

    S3923

    Abstract: S3922 S3922-128Q S3922-256Q S3922-512Q S3923-1024Q S3923-256Q S3923-512Q high frequency linear cmos IMAGE SENSOR silicon PIN photodiode driver
    Text: IMAGE SENSOR NMOS linear image sensor S3922/S3923 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3922/S3923 SE-171 KMPD1037E01 S3923 S3922 S3922-128Q S3922-256Q S3922-512Q S3923-1024Q S3923-256Q S3923-512Q high frequency linear cmos IMAGE SENSOR silicon PIN photodiode driver

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3921/S3924 SE-171 KMPD1044E01

    S3923-256Q

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3922/S3923 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3922/S3923 SE-171 KMPD1037E01 S3923-256Q

    S3924

    Abstract: ts 8808 S3921 S3921-128Q S3921-256Q S3921-512Q S3924-1024Q S3924-256Q S3924-512Q
    Text: IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3921/S3924 SE-171 KMPD1044E01 S3924 ts 8808 S3921 S3921-128Q S3921-256Q S3921-512Q S3924-1024Q S3924-256Q S3924-512Q

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3922/S3923 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3922/S3923 KMPD1037E03

    S3904

    Abstract: TOPR 150 photodiode transistor S3901 S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q high frequency linear cmos IMAGE SENSOR
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E01 TOPR 150 photodiode transistor S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q high frequency linear cmos IMAGE SENSOR

    silicon photodiode array

    Abstract: photodiode amplifier S3901 S3901-128Q S3901-256Q S3901-512Q S3904 S3904-1024Q S3904-256Q S3904-512Q
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E03 silicon photodiode array photodiode amplifier S3901-128Q S3901-256Q S3901-512Q S3904-1024Q S3904-256Q S3904-512Q

    S8382

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S5930/S5931 SE-171 KMPD1018E03 S8382

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3901/S3904 S3901 S3904 KMPD1036E04

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E01

    C8225

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3901/S3904 series Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E02 C8225

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S3921/S3924 KMPD1044E03

    photo sensor s4810

    Abstract: S4810 1BW TRANSISTOR S6289
    Text: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.


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    PDF S4810, S6289 S4810 S6289 S4810: S6289: SE-171 KPIC1005E03 photo sensor s4810 1BW TRANSISTOR

    charge amplifier

    Abstract: cmos IMAGE SENSOR evaluation board
    Text: IMAGE SENSOR CMOS linear image sensor S10226 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance t Surface mount package: 2.4 x 9.1 × 1.6 mm l Pixel pitch: 7.8 µm Pixel height: 125 µm l Number of pixels: 1024 ch


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    PDF S10226 SE-171 KMPD1097E07 charge amplifier cmos IMAGE SENSOR evaluation board

    XA1103

    Abstract: No abstract text available
    Text: CXA1103AM SONY Photodiode l-V Conversion Amplifier Description Package Outline CXA1103AM is a trans-impedance type, wide band low noise am plifier fo r photo detector. Combined with a pin photodiode it composes a high performance optical receiver. U n it: mm


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    PDF CXA1103AM CXA1103AM 40MHz 10MHz) XA1103

    p0201

    Abstract: transistor r4c photo sensor PHOTO SENSOR of application PHOTO TRANSISTOR ps201 sensor optical PHOTO TR PD101 PS101
    Text: AC INTERFACE INC IDE D |0023303 0000030 3 j PHOTOTRANSISTOR/PIN PHOTODIODE PHOTOTRANSISTOR Ta=g5‘C ' C o llecto r D issipation Type No. Pc T O - 18 PS PD ; CoBectoc-Emittef . Emtter£oS«t«r. Breakdown. Breakdown V oltage -, Voltage • V elo ’ 'V ceo


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    PDF 00DDD3Ã PP210 p0201 transistor r4c photo sensor PHOTO SENSOR of application PHOTO TRANSISTOR ps201 sensor optical PHOTO TR PD101 PS101

    Photodiode and amplifier IC for CD

    Abstract: 80709-hp A1103 CXA1103AM TOPR 150 photodiode transistor sw1 band sw2 receiver am mw cd photodiode IC sony photodiode IC sony cd
    Text: CXA1103AM SONY. Photodiode l-V Conversion A m p lifier_ For the availabilityof this product, please contact the sales oTfîceT D e s c rip tio n P ackage O u tlin e C XA1103AM is a trans-impedance type, wide band low noise am plifier fo r photo detector. Combined w ith


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    PDF A1103 CXA1103AM 40MHz -147dBV/VHz 10MHz) Photodiode and amplifier IC for CD 80709-hp TOPR 150 photodiode transistor sw1 band sw2 receiver am mw cd photodiode IC sony photodiode IC sony cd

    st s3931

    Abstract: 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp
    Text: H AM A M A TSU THERM O ELECTRIC ALLY-CO OLED TECHNICAL DATA N-MOS LINEAR IMAGE SENSORS S5930, S5931 SERIES A built-in therm oelectric cooler enables highly stable m easurem ents even at very-low -light level FEATURES • Wide photosensitive area Pixel pitch: 50 n m S5930 Series , 25/* m (S5931 Series)


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    PDF S5930, S5931 S5930 Telephone306 D-82211 33-CK9 st s3931 10sp thermistor S3931 Peltier element thermoelectric peltier Silicon Photodiode DT 25 "Peltier element" S593 L4064 10sp