uVGA
Abstract: microVGA CP2102 AVR rgb ftdi spi example 320X240
Text: USERS MANUAL µVGA PICASO MD1 Tiny VGA Graphics Controller QVGA, VGA, SVGA Revision 1.2 4D Systems PROPRIETORY INFORMATION The information contained in this document is the property of 4D Systems Pty. Ltd., and may be the subject of patents pending or granted, and must not be copied or disclosed with out
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OEB47
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66221SP/FP 256 X 9-BIT MAIL-BOX DESCRIPTION PIN CONFIGURATION (Top view) The M66221 is a mail box that incorporates a complete CMOS shared memory cell of 256 x 9-bit configuration using high-performance silicon CHIP SELECT INPUT CSA -»
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M66221SP/FP
M66221
1250ft
775S2
100pF
OEB47
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LT 7201
Abstract: AS221AF LT 7202
Text: SN74ACT7200L, SN74ACT7201 LA, SN74ACT7202LA 256 x 9, 51 2 x 9, 1 024 x 9 AS YN CH RO N O US FIRST-IN, FIRST-OUT MEMORIES S C A S 221A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 • DV OR NP PACKAGE TOP VIEW R e a d s and Wr ites Can B e A s y n c h r o n o u s
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SN74ACT7200L,
SN74ACT7201
SN74ACT7202LA
SN74ACT7201LA-5
SN74ACT7202LA-1024
LT 7201
AS221AF
LT 7202
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M514800A
Abstract: m514800
Text: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher
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M514800A/AL
HM51S4800A/AL
288-word
HM514800A
400-mil
28-pin
M514800A
m514800
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Untitled
Abstract: No abstract text available
Text: iw VITELIC V 53C 256 FAMILY HIG H PERFORMANCE, LOW POWER 2S 6K X 1 B IT FAST PAGE MODE CMOS D YN AM IC RAM f HIGH PERFORMANCE V53C256 70/70L 80/80L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tQAA 35 ns 40 ns 45 ns
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V53C256
70/70L
80/80L
V53C256L
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MC68010
Abstract: Motorola B13 mc68eco MC68030 MC12078 MC68EC040R33 TEA 1732
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1.3GHz Prescaler MC12078 The MC12078 is a divide by 256 prescaler. Typical frequency s yn th e sis a p p lica tio n s inclu d e e lctro n ica lly tuned T V /C A T V and com m unication systems as well as instrumentation.
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MC12078
MC12078
PLAST30,
MC68EC020
M68040,
MC68LC040
MC68010,
MC68020,
MC68030,
MC68040
MC68010
Motorola B13
mc68eco
MC68030
MC68EC040R33
TEA 1732
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top 256 yn
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1.3GHz Prescaler MC12078 The MC12078 is a divide by 256 prescaler. Typical frequency s yn th e sis a p p lica tio n s in clu d e e lc tro n ic a lly tu n e d TV /C A T V and com m unication systems as well as instrumentation.
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MC12078
MC12078
90MHz
150-1100MHz
90-500M
300MHz
C12078
BR1334
top 256 yn
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am8085
Abstract: Dynamic Memory Refresh Controller MOS RAMs AmZ8
Text: AmZ8164 D ynam ic M em ory Controller ADVANCED INFORMATION DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • Dynamic Memory Controller for 16K and 64K MOS dynamic RAMs • 8-Bit Refresh Counter for refresh address generation, has clear input and terminal count output
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AmZ8164
am8085
Dynamic Memory Refresh Controller
MOS RAMs
AmZ8
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HM514102
Abstract: No abstract text available
Text: HM514102C/CL Series 4,194,304-w ord x 1 -b it D ynam ic R andom A ccess M em ory Rev. 0.0 O ct. 20, 1994 HITACHI The Hitachi HM514102C/CL is a CMOS dynamic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 -w o rd x 1-bit. H M 514102C /C L has re a liz e d h ig h er den sity ,
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HM514102C/CL
304-word
300-mil
26-pin
400-mil
HM514102
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Untitled
Abstract: No abstract text available
Text: HM514400C/CL Series 1,048,576-w ord x 4-b it D ynam ic Random Access M em ory HITACHI The H itachi H M 514400C is a CM OS dynam ic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. HM 514400C has realized higher density, higher performance and various functions by employing
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HM514400C/CL
576-w
514400C
300-mil
26-pin
400mil
20-pin
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Untitled
Abstract: No abstract text available
Text: HM514800A/AL Series HM51S4800A/AL Series Preliminary 5 2 4,28 8-w o rd x 8 -b it D ynam ic R a nd o m A c c e s s M em ory T he H ita c h i H M 5 I 4 8 0 0 A RAM o rg a n iz e d as ¿ire C M O S d y n a m i c 5 2 4 ,2 8 8 -w o rd Features x 8 -h it. H M 5 I 4 8 0 0 A have re a liz e d h i g h e r dens ity, h ig h e r
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HM514800A/AL
HM51S4800A/AL
ns/80
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Untitled
Abstract: No abstract text available
Text: KM418C256/L/SL CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erfo rm ance range: Th e S am su ng K M 41 8 C 2 5 6 /L /S L is a C M O S high speed 262,144 bit x 18 D ynam ic R andom A ccess M em o ry. Its K M 418C 256/L/S L-7
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KM418C256/L/SL
256Kx
256/L/S
130ns
150ns
100ns
180ns
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V53C464-80
Abstract: V53C464-80L V53C464
Text: 9502310 VIT EL IC CORP 98D 00380 V I T E L I C CO RP Tfl jr “ VITELIC D - T-Vé-23-Z7 DE ^ TSD5310 DODGBflD S | VS3C464 FAMILY HIGH PERFORMANCE, LOW POWER 64 K X 4 B IT FAST PAGE M ODE CMOS D YN A M IC RAM HIGH PERFORMANCE V53C464 70/70L 10/10L 12/12L 80 ns
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-23-Z7
TSD5310
VS3C464
70/70L
V53C464
10/10L
12/12L
V53C464L
V53C464
V53C464-80
V53C464-80L
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HM514410
Abstract: No abstract text available
Text: HM51441OB/BL Series 1,048,576-word x 4-bit D ynam ic R A M The Hitachi H M ? 14 4 1O B/BL is a C M O S dynamic Ordering Information R A M organi/.ed I .04K .576-w ord x 4-hit. H M 5 14 4 1O B / B L has realized h ig h er density, higher perform ance and various functions by
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HM51441OB/BL
576-word
576-w
HM514410BS/BLS-7
HM514410BS/BLS-8
300-mil
20-pin
CP-20D)
400-mil
HM514410
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Untitled
Abstract: No abstract text available
Text: M OSEL V I T E L I C V53C8125L U LTR A -H IG H PERFORM ANCE, 3.3 VO LT 128K X 8 B IT F A S T P A G E M O D E CM O S D YNA M IC R A M HIGH PERFORMANCE 60 60 ns Max. RAS Access Time, tpjAc Max. Column Address Access Time, P R ELIM IN A R Y 30 ns ( Ìq a a )
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V53C8125L
28-pin
24-pin
26/24-pin
8125L
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Untitled
Abstract: No abstract text available
Text: MOSEL V i T E L i C V53C8125L ULTR A -H IG H PERFORM ANCE, 3.3 VO LT 128K X 8 B IT F A S T PA G E M O D E CM OS D YN A M IC R A M HIGH PERFORMANCE P R ELIM IN A R Y 60 Max. RAS Access Time, tp^c 60 ns Max. Column Address Access Time, (tCAA) 30 ns Min. Fast Page Mode Cycle Time, (tPC)
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V53C8125L
28-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M O SE L V IT E L IC V53C8125H U LTRA-H IG H P E R FO R M A N C E , 128K X 8 F A S T PAGE M O D E CM OS D YNAM IC R A M HIGH PERFORMANCE 35 40 45 50 35 ns 40 ns 45 ns 50 ns 18 ns 20 ns 22 ns 24 ns in. Fast Page Mode Cycle Time, tpc 21 ns 23 ns
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V53C8125H
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EZ613
Abstract: MSM51C256-10 MSM51C256 MSM51C256RS
Text: y - y . . O K I SEMICONDUCTOR GROUP O K I semiconductor_ T -V * MSM51C256 2 6 2 ,1 4 4 W ORD X1-BITS D YN A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The
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MSM51C256
DIP/18
MSM51C256-10
EZ613
MSM51C256RS
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HYUNDAI i10
Abstract: No abstract text available
Text: PRELIMINARY HY51C464 HYUNDAI SEMICONDUCTOR 6 5 ,5 3 6 x4-Bit CMOS D ynam ic RAM AUGUST 1986 Oov,cd- The HY51C464 offers a m axim um standby current of 100 ft A w hen RAS ? Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re
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HY51C464
536x4-Bit
HY51C464
K29793/4
K23955/7
DS11-08/86
HYUNDAI i10
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ZL68
Abstract: No abstract text available
Text: DUAL 256/512/1024x36 CMOS SyncFlFO FEATURES: ADVANCED INFORMATION IDT723622 IDT723632 IDT723642 space-saving 120-pin Thin Quad Flatpack PF • Free-running CLKA and CLKB may be asynchronous or coincident • Two independent clocked FIFOs buffering data in oppo
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256/512/1024x36
IDT723622
IDT723632
IDT723642
IDT723622--
IDT723632--
IDT723642--
67MHz
132-pin
120-pin
ZL68
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Untitled
Abstract: No abstract text available
Text: D U AL D U AL D U AL D U AL C M O S S yncFlFO 256 x 9, D U AL 512 x 9, 1,024 x 9, D U AL 2,048 x 9, 4 ,096 x 9, D U AL 8,192 x 9 Each of the two FIFOs designated FIFO A and FIFO B contained In the IDT72801/72811/72821/72831/72841/72851 has a 9-bit input data port
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IDT72801
IDT72811
IDT72821
IDT72831
IDT72841
IDT72851
IDT72201
IDT72211
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Untitled
Abstract: No abstract text available
Text: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom
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KM44C4110A/AL/ALL/ASL
110ns
130ns
150ns
KM44C411OA/AL/ALL/ASL
24-LEAD
300MIL)
300MIL,
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14241
Abstract: TO63 package CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4241 CY7C4251 CY7C42X1 CY7C4421
Text: fax id: 5409 •>* : CY7C4421/4201 /4211/4221 CY7C4231/4241/4251 .6 4 /2 5 6 /5 1 2 /1 K /2K /4K /8K x 9 S ynch ro no us FIFO s Functional Description Features • High-speed, low-power, first-in, first-out FIFO memories • 6 4 x 9 (CY7C4421) • 256 x 9 (CY7C4201)
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Y7C4421
CY7C4231
64/256/512/1K/2K/4K/8K
CY7C4421)
CY7C4201
512x9
CY7C4211
CY7C4221
CY7C4231)
CY7C4241
14241
TO63 package
CY7C4201
CY7C4211
CY7C4221
CY7C4241
CY7C4251
CY7C42X1
CY7C4421
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ADU01
Abstract: Intel P55 Chipset D31CD
Text: — ^ C Y M 7 4 B P 5 4 CYM 74P54/55 ^ l r t î m n r n P R E L IM IN A R Y . n wm W U ir K fc b b C Y M 7 4 S P 5 4 /5 5 — Intel 82430NX Chipset Level II Cache Module Family Feat ures • Pi n- compat i bl e secondary cache mo d ul e family • As yn ch r o no u s CYM7 4BP5 4 , sync h r o no us pipelined
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74P54/55
82430NX
82430NX
160-position
ADU01
Intel P55 Chipset
D31CD
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