74HC253p
Abstract: No abstract text available
Text: M IT S U B IS H I HIGH SPEED CMOS M74HC253P/FP/DP DUAL 4 -IN P U T DATA S E L E C T O R /M U L T IP L E X E R W ITH 3-S TA TE O U TPU TS DESCRIPTION The M 74H C 253 is a sem ico nductor integrated circuit con PIN CONFIGURATION TOP VIEW sisting of tw o 4-lin e to 1-line data se le cto rs/m u ltip le xrs with
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M74HC253P/FP/DP
74LSTTL
74HC253p
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Untitled
Abstract: No abstract text available
Text: Am25LS253 • Am54LS/74LS253 Dual 4-Line to 1-Line Data Selectors/Multiplexers Am25LS253 • Am54LS/74LS253 data is combined with the Am25LS153. F U N C T IO N A L D E S C R IP T IO N These dual four-input m ultiplexers provide the digital equivalent of a two-pole, four position switch w ith the posi
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Am25LS253
Am54LS/74LS253
Am25LS153
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pin diagram of ic 74ls153
Abstract: No abstract text available
Text: TC74HC153P/F TC74HC253P/F TC74HC153P/F DUAL 4-CHANNEL MULTIPLEXER TC74HC253P/F DUAL 4-CHANNEL MULTIPLEXER WITH 3-STATE OUTPUT The TC74HC153 and TC74HC253 are high speed CMOS DUAL 4-CHANNEL MULTIPLEXERS fabricated with silicon gate C2MOS technology. Both achieve the high speed operation similar to equivalent LSTTL while maintaining
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TC74HC153P/F
TC74HC253P/F
TC74HC253P/F
TC74HC153
TC74HC253
HC153)
HC253)
HC153
pin diagram of ic 74ls153
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74ls592
Abstract: No abstract text available
Text: TOSHIBA TC74HC592AP/AF 8-Binary Counter with Input Register The TC74HC590A is a high speed CMOS 8-BIT REGISTER COUNTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC592AP/AF
TC74HC590A
74ls592
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IC 74LS153
Abstract: of ic 74ls153 AM25LS153
Text: Am25LS153 • Am54LS/74LS153 Am25LS253 • Am54LS/74LS253 Dual 4-Line To 1-Line Data Selectors/Multiplexers D IS T IN C T IV E C H AR AC TER ISTIC S F U N C T IO N A L DESCRIPTIO N • • • These dual fo u r-in p u t m ultiplexers provide the digital equivalent o f a tw o-pole, fo u r position switch w ith the posi
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Am25LS153
Am54LS/74LS153
Am25LS253
Am54LS/74LS253
LS153,
LS253,
54LS/74LS
LS153
LS253
LS/54
IC 74LS153
of ic 74ls153
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B6U 380
Abstract: semikron SKS B6U B6CI semikron SKS lem LA 55-P lem la 55 b6u b6ci skhi 20opa SKS 150 B6U IGBT SEMISTACK
Text: SEMISTACK - IGBT Circuit Iout Vout Vdc Types B6CI 13 380 (750) SKS 13F B6U+B6CI+E1CIF*2 09 V12 Symbol SEMITOP Stack1) Three-phase inverter SKS 13F B6U+B6CI+E1CIF*2 09 V12 SK 30 GB 123 / SK 60 GB 123 / SK 70 D 12 P35/260F SKHI 20opA Iout Vin fSWmax fSWmaxCsl
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123tive
B6U 380
semikron SKS B6U B6CI
semikron SKS
lem LA 55-P
lem la 55
b6u b6ci
skhi 20opa
SKS 150 B6U
IGBT SEMISTACK
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semikron SKS B6U B6CI
Abstract: B6U 380 skhi 20opa B6U SKS diode b6u semikron SKS 6CN3 lem LA 55-P lem la 55 p b6u b6ci
Text: SEMISTACK - IGBT Circuit Iout Vout Vdc Types B6CI 17 380 (750) SKS 17F B6U+B6CI+E1CIF*2 11 V12 Symbol SEMITOP Stack1) Three-phase inverter SKS 17F B6U+B6CI+E1CIF*2 11 V12 SK 40 GB 123 / SK 60 GB 123 / SK 70 D 12 P35/260F SKHI 20opA Iout Vin fSWmax fSWmaxCsl
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semikron SKS
Abstract: inverter 12 V to 220 V 3 phase IGBT inverter design B6CI 16 V12 hall sensor 326 B6CI SKS 21F skhi 20opa connector 26 pin semikron 220 V inverter 12 V
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 21F B6U+B6CI+E1CIF 12 V12 SK 40 GB 123 SK 30 GAL 123 SK 70 D 12 P 35/260F Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol
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10min
B43303A0687
semikron SKS
inverter 12 V to 220 V
3 phase IGBT inverter design
B6CI 16 V12
hall sensor 326
B6CI
SKS 21F
skhi 20opa
connector 26 pin semikron
220 V inverter 12 V
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semikron SKS 22F
Abstract: semikron SKS SKS 22F B6CI 3 phase IGBT inverter design skhi 20opa lem lah M/425-SK/N LAH 25-NP semikron skhi 20
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 22F B6U+B6CI+E1CIF 13 V12 SK 30 GB 128 SK 30 GAL 123 SK 70 D 12 P 35/260F Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol
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10min
B43303A0687
semikron SKS 22F
semikron SKS
SKS 22F
B6CI
3 phase IGBT inverter design
skhi 20opa
lem lah
M/425-SK/N
LAH 25-NP
semikron skhi 20
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semikron SKS
Abstract: j1nac3 3 phase IGBT inverter design B6CI sks 46 design dc link inverter 15V relay no ,nc 3 phase inverter circuit design SEMISTACK IGBT skhi 20opa
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 46F B6U+B6CI+E1CIF 17 V6 SK 80 GB 063 SK 70 GAL 063 SK 70 D 08 P 35/325F SKHI 20opA Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg
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10min
B43303A0158
semikron SKS
j1nac3
3 phase IGBT inverter design
B6CI
sks 46
design dc link inverter
15V relay no ,nc
3 phase inverter circuit design
SEMISTACK IGBT
skhi 20opa
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lem la 55 p
Abstract: semikron SKS semikron SKS 32f lem LA 55-P SKS 32F IGBT SEMISTACK lem la 55 3 phase IGBT inverter design SEMISTACK B6CI
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 32F B6U+B6CI+E1CIF 12 V6 SK 45 GB 063 SK 30 GAL 123 SK 70 D 08 P 35/260F Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol
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10min
B43303A0158
lem la 55 p
semikron SKS
semikron SKS 32f
lem LA 55-P
SKS 32F
IGBT SEMISTACK
lem la 55
3 phase IGBT inverter design
SEMISTACK
B6CI
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semikron SKS
Abstract: semikron SKS 35F lem LA 55-P B6CI SKS 35F 3 phase inverter circuit design 3 phase IGBT inverter design LA 55-P j1nac3 IGBT SEMISTACK
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 35F B6U+B6CI+E1CIF 21 V12 SK 60 GB 128 SK 60 GAL 123 SK 70 D 12 P 35/325F SKHI 20opA Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg
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10min
B43303A0687
semikron SKS
semikron SKS 35F
lem LA 55-P
B6CI
SKS 35F
3 phase inverter circuit design
3 phase IGBT inverter design
LA 55-P
j1nac3
IGBT SEMISTACK
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semikron SKS
Abstract: semikron SKS 21f lem la 55 p j1nac3 lem LA 55-P SEMISTACK IGBT skhi 20opa semikron fan SKS 21F B6CI 16 V12
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 21F B6U+E1CIF+B6CI 12 V12 SK 40 GB 123 SK 30 GAL 123 SK 70 D 12 P 35/260F Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol
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35/260F
B43303A0687
semikron SKS
semikron SKS 21f
lem la 55 p
j1nac3
lem LA 55-P
SEMISTACK IGBT
skhi 20opa
semikron fan
SKS 21F
B6CI 16 V12
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M41464
Abstract: m41464-10 msm41464 msm41464-10 M4146410
Text: O K I semiconductor MSM41464 65,536-WORD x 4-BIT DYNAMIC RAM PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSM41464 is a fully decoded, dynamic NMOS random access memory organized as 65,536 words x 4 bits. The design is optimized for high-speed, high performance applications
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MSM41464
536-WORD
MSM41464
capabili125
M41464
m41464-10
msm41464-10
M4146410
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74hc153
Abstract: cny 267
Text: M54HC153/253 M74HC153/253 Æ 7 SCS-THOMSON ^7#» üSfflÊMIIUlffiJlBlMD HC 153 DUAL 4-CHANNEL MULTIPLEXER HC253 DUAL 4-CHANNEL MULTIPLEXER 3-STATE OUTPUT PRELIMINARY DATA • HIGH SPEED tpo= 14 ns Typ at V c c = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at TA = 25°C
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M54HC153/253
M74HC153/253
HC253
54/74LS153/253
M54HCXXX
M74HCXXX
M74HCXXXL
M54/74HC153/253
74hc153
cny 267
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Untitled
Abstract: No abstract text available
Text: rZ 7 SCS-THOMSON M54HC153/253 [10m Q [ilLi mi0(gi_M74HC153/253 HC153 DUAL 4-CHANNEL MULTIPLEXER HC253 DUAL 4-CHANNEL MULTIPLEXER 3-STATE OUTPUT PRELIMINARY DATA • HIGH SPEED tpo = 14 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION ICC = 4 ^A (MAX.) at T a = 25°C
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M54HC153/253
M74HC153/253
HC153
HC253
28o/o
M74HCXXX
M54HCXXX
M74HCs
M54/74HC153/253
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Untitled
Abstract: No abstract text available
Text: SbE D 7 ^2 *1 2 3 7 0 0 3 ^ 2 3 112 ISGTH T ~ 4 7 - Z l ~ S ’/ M54HC153/253 M74HC153/253 S C S -T H O M S O N IILC HC153 DUAL 4-CHANNEL MULTIPLEXER HC253 DUAL 4-CHANNEL MULTIPLEXER 3-STATE OUTPUT PRELIMINARY DATA S G S-TH0HS0N HIGH SPEED tp o = 1 4 ns Typ at V<x = 5V
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M54HC153/253
M74HC153/253
HC153
HC253
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M41256A
Abstract: No abstract text available
Text: O K I semiconductor MSM41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications
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MSM41256A
144-WORD
MSM41256A
18pin
M41256A
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SET08F/FU TENTATIVE DATA UNDER DEVELOPMENT 2-INPUT AND GATE The TC7SET08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent
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TC7SET08F/FU
TC7SET08
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM41257A 262,144-WORD x 1-BIT DYNAMIC RAM NIBBLE MODE TYPE _ GENERAL DESCRIPTION The Oki MSM41257A is a fully decoded, dynamic NMOS random access memory organized as 262,144 words x 1 bit. The design is optimized for high-speed, high performance applications
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MSM41257A
144-WORD
MSM41257A
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Untitled
Abstract: No abstract text available
Text: HV632 32-Channel, 256 Gray-Shade High Voltage Driver Features General Description ► ► ► ► ► ► ► ► ► ► ► The HV632 is a 32-channel gray-shade column driver IC designed for driving electrofluorescent displays. Using Supertex’s unique HVCMOS
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HV632
32-Channel,
HV632
32-channel
10MHz
20MHz
DSFP-HV632
A091908
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footprint jedec MS-026 LQFP
Abstract: No abstract text available
Text: HV632 32-Channel, 256 Gray-Shade High Voltage Driver Features General Description ► ► ► ► ► ► ► ► ► ► ► The HV632 is a 32-channel gray-shade column driver IC designed for driving electrofluorescent displays. Using Supertex’s unique HVCMOS
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HV632
32-Channel,
10MHz
20MHz
32-channel
DSFP-HV632
A092908
footprint jedec MS-026 LQFP
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M41256A
Abstract: 41256A
Text: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications
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144-WORD
MSM41256A
M41256A
41256A
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41256A
Abstract: No abstract text available
Text: O K I semiconductor MSM41257A 262,144-WORD x 1-BIT DYNAMIC RAM NIBBLE MODE TYPE _ GENERAL DESCRIPTION The Oki MSM41257A is a fully decoded, dynamic NMOS random access memory organized as 262,144 words x 1 bit. The design is optimized for high-speed, high performance applications
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MSM41257A
144-WORD
MSM41257A
41256A
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