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    TO92 JFET P CHANNEL Search Results

    TO92 JFET P CHANNEL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TO92 JFET P CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		PDF O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
    Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net


    Original     		PDF OT-23 JFET TRANSISTOR REPLACEMENT GUIDE j201 J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET

    E 212 fet

    Abstract: 2N3820 philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti
    Text: PHILIPS MIE INTERNATIONAL Data sheet status Preliminary specification date o f issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It is intended for use in general purpose amplifiers. D EH 711002b


    OCR Scan     		PDF 711002b 12fci337 2N3820 MBB161 711002b DG2b33fl 2N3820 7110fiSb 002b340 E 212 fet philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti

    2N3820

    Abstract: No abstract text available
    Text: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET


    OCR Scan     		PDF 2N3820 MBB181 003SA4b S3T31 Q03Sfl4fl 2N3820

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1


    OCR Scan     		PDF 2N3819 bb53T31

    2N3820

    Abstract: P-Channel JFET 2n3820 transistor
    Text: PHI L IP S 41E D INTERNATIONAL Philips Components D ata sheet status Preliminary specification d ate of Issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope, it is intended for use in general purpose amplifiers.


    OCR Scan     		PDF 711002b 2b337 2N3820 Q02b33ô 711005t 002b340 2N3820 P-Channel JFET 2n3820 transistor

    "P-Channel JFET"

    Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
    Text: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.


    OCR Scan     		PDF 2N3820 MBB161 003Sfl4b 67max "P-Channel JFET" 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti

    transistor 2N3819

    Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N


    OCR Scan     		PDF 2N3819 UBB081 D035fl44 J-FET-2N3819 transistor 2N3819 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


    OCR Scan     		PDF 2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819

    jfet

    Abstract: 2N4303 Siliconix JFET Dual 2N4381 to92 jfet p channel 2N4302 n channel 2n4393 2N3994 dual P-Channel JFET 2n4267
    Text: Product Specifications Product Specifications Cont’d Low Leakage Diodes Part Number Package (TO- ) Diode Reverse Current (pA, Max.) Breakdown Voltage (Volts) Min. Max. DPAD1 DPAD2 DPAD5 DPAD10 DPAD20 DPAD50 D PAD100 78 , 72 72 72 72 72 72 Dual : Dual Dual


    OCR Scan     		PDF DPAD10 DPAD20 DPAD50 DPAD100 JPAD10 JPAD20 JPAD50 JPAD100 JPAD200 JPAD500 jfet 2N4303 Siliconix JFET Dual 2N4381 to92 jfet p channel 2N4302 n channel 2n4393 2N3994 dual P-Channel JFET 2n4267

    2N3819

    Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
    Text: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92


    OCR Scan     		PDF 711002b G02b333 2N3819 MBB081 G02b334 T-35-25 711i0fiBb 005b33b 2N3819 transistor 2N3819 2n3819 transistor J-FET 2N3819

    to92 jfet p channel

    Abstract: SOT-23 vhz SOT-23 "vhz" sst2* "p- jfet sot23" U402 SST5463 S0T23 J201 N-channel JFET SST5461
    Text: Discretes continued JFET Amplifier Applications JFET Switches P/N VGS(otl) Ig ss TDS(on) V(max) pA(max) U (m ax) 2M4391 2N4392 2N4393 50 -10 -100 30 3.5 T0-18 N 25 5 -5 -3 -100 -100 60 100 3.5 3.5 T0-18 T0-18 N N 2N5114 2M5115 2IM5116 -30 -15 -5 10 500 500


    OCR Scan     		PDF 2M4391 2N4392 2N4393 2N5114 2M5115 2IM5116 2N5432 2IM5433 2N5434 2N4117A to92 jfet p channel SOT-23 vhz SOT-23 "vhz" sst2* "p- jfet sot23" U402 SST5463 S0T23 J201 N-channel JFET SST5461

    2M5457

    Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
    Text: Discretes continued Low Leakage Diodes JFET Amplifier Applications High G ain P/N P/N Id s s •g s s m A (m in ) pA(m a x) gis m S (m in ) N 3.0 3.5 4.0 4.0 6.0 20 20 20 5 5 5 20 20 5 TO-92 TO-92 TO-92 TO-92 TO-92 N N N N N N P P 5 5 10 20 20 5 TO-92 TO-92


    OCR Scan     		PDF 2N4416/A 2N5484 2N5485 2N5486 PN4416 SST271 2M5457 2N5458 2N5459 DPAD10 SOT-23 Rod MOSFET P channel SOT-23 N JFET

    j105

    Abstract: JFET J105
    Text: C T S i licoriix Jm W J105 SERIES N-Channel JFETs in c o r p o r a te d The J105 Series are high-performance JFET analog switches designed to offer low on-resistance and fast switching. rDg 0N < 3 n is guaranteed with the J105 which makes this device the lowest of any


    OCR Scan     		PDF O-226AA) j105 JFET J105

    MMBFJ174

    Abstract: MMBF5115 p1086 MMBFJ177
    Text: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )


    OCR Scan     		PDF 2N5018 2N5019 MMBF5114 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 MMBFJ175 MMBFJ176 p1086 MMBFJ177

    PF5301

    Abstract: No abstract text available
    Text: JFET Transistors NATL INational Semiconductor N-Channel JFETs Caso Style 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A •gss p F @ V dg Max (V) Vp ■d s s (fiA @V |jS) VDS ■d (V) Min Max (V) (nA) Min Max (V) @ Gf» (fim ho) @Vqs Min Max (V) TO-72 TO-72


    OCR Scan     		PDF 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A NF5301 NF5301-1 NF5301-2 NF5301-3 PF5301

    J105

    Abstract: No abstract text available
    Text: Tem ic J105/106/107 Semiconductors N-Channel JFETs Product Summary P a rt N um ber J105 J106 J107 V g S «B (V) -4.5 to -10 -2 to -6 -0.5 to -4.5 Features • • • • • Low On-Resistance: J 105 < 3 Q Fast Switching— îq n : 14 ns Low Leakage: 10 pA


    OCR Scan     		PDF J105/106/107 J105/106/107 P-37408--Rev. -Jul-94 04-Jul-94 J105

    2N5458 NATIONAL SEMICONDUCTOR

    Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
    Text: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A


    OCR Scan     		PDF b501130 003THTfl 2N3684 2N3686 2N3822 PN4303 2N4338 T0-18 2N4339 2N5458 NATIONAL SEMICONDUCTOR to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET

    U290

    Abstract: U2901 U290-1
    Text: OATS I« BACKSIDE CONTACT s n-channel JFET designed for . . . S ilic o n ix • Analog Switches B E N E F IT S: ■ Commutators • ■ Choppers Very Low Insertion Lots RDS on < 2 5 Ohms (U290) • High Off-lsolation TY PE PACKAGE P R IN C IP A L D E V IC E S


    OCR Scan     		PDF U290-1 J105-7 J105-18-107-18 U290CHP-1CHP, J105CHP-7CHP U290 U2901

    JFET J105

    Abstract: No abstract text available
    Text: Tem ic Sillconix _ J105/106/107 N-Channel JFETs Product Summary P a rt N um ber v GS<off Y) rnscon) M ax ( ß ) J105 -4 .5 to - 1 0 3 10 14 J106 - 2 to - 6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 toN iy p (ns) iD(off) ty P (PA) Features


    OCR Scan     		PDF J105/106/107 P-37408--Rev. JFET J105

    TEMIC 2N3819

    Abstract: 2N3819 equivalent 2n3819 equivalent ic 2n3819
    Text: Temic 2N3819 S e m i c o n d u c t o r s N-Channel JFET Product Summary V cS off ( V ) V (B R )G S S M i n (V ) < -8 gfs Min (mS) IDSS Min(mA) 2 -25 2 Features Benefits Applications • Excellent High-Frequency Gain: Gps It dB @ 400 MHz • Very Low Noise: 3 dB @ 400 M Hz


    OCR Scan     		PDF 2N3819 2N3819 S-52424-- 14-Apr-97 TEMIC 2N3819 2N3819 equivalent 2n3819 equivalent ic

    U1994

    Abstract: 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416
    Text: d e s ig n e d fo r . S ili c o n ix IH si?l 2 5 ?ine5 Curv8S K . . • VHF/UHF Amplifiers m K l8 3 7 -18 s n-channel JFET b e n e fits * *pecifiecl for2 °M Hz0peration Mixers ■ Oscillators TO-92 See Section 7 AB SO LUTE M A X IM U M R A TIN G S 25°C


    OCR Scan     		PDF Vqs-16 U1994 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416

    2N4117A NATIONAL SEMICONDUCTOR

    Abstract: National Semiconductor Discrete catalog PN4117A MMBF4119 2N4117A 2N4118 2N4118A MMBF4117 MMBF4118 NATIONAL SEMICONDUCTOR TO-92
    Text: bflE D • b S 0 1 1 3 0 □ □ 3 ciS0M 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL S E M I C O N D D IS CR ET E N Channel V p @ V DS lD Device MMBF4117 BVgss (V) Min 40 % IfiSS (lunho) (V) <P*) Max (V) Min Max 10 0.6 2.8 10 2.8 10 (nA)


    OCR Scan     		PDF bS01130 MMBF4117 O-236* PM4117 2N4118 MMBF4118 MMBF4119 2N4117A 2N4117A NATIONAL SEMICONDUCTOR National Semiconductor Discrete catalog PN4117A 2N4118A NATIONAL SEMICONDUCTOR TO-92