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    TO82 TRANSISTOR Search Results

    TO82 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TO82 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO82 TRANSISTOR

    Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan     		e6DjP073L. 254D22 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1016 2N1016A TO82 TRANSISTOR npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227 PDF

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan     		25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227 PDF

    2N1016

    Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
    Text: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,


    OCR Scan     		DDGD43T 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 152-TO-82 2N1016 2N2772 2N2771 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430 PDF

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Text: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


    OCR Scan     		2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C PDF

    2N2227

    Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32


    Original     		2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229 PDF

    Darlington npn stud mount

    Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
    Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25


    OCR Scan     		7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240 PDF

    SPC151-04

    Abstract: SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22
    Text: POWER TRANSISTORS TYPE NO. SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 SPC151-24 SPC151-26 SPC151-28 SPC151-30 PT @ 25’ C Watts 100 100 100 100 100 100 100 100 100 100 100 100 100 100 MAXIMUM RATINCS


    OCR Scan     		SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 SPC151-24 SPC151-26 SPC151-28 SPC151-30 MAXIMUM RATINCS @ 25’ C B V cb o B V ceo B V ebo le V Watts V V À 100 100 100 100 100


    OCR Scan     		SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 PDF

    nec 2Sb617

    Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85


    Original     		IDA1263 IDC3180 2SA1263 2SC3180 BDT41B BDT42B BD244B SSP82B nec 2Sb617 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617 PDF

    Untitled

    Abstract: No abstract text available
    Text: li POWER TRANSISTORS I i r PT TYPE NO. @ 25*C Watts hFE M AXIM UM RATINGS B vc bo B V ceo B V ebo V V V le A M IN MAX @ Sat Test Voltages Conditions le VCE VCE VBE le Ib I ebo À V V V A A ma SPC151-04 100 65 40 25 6 11 1.5 4 1.30 2.5 1.5 .25 20 100 85 60


    OCR Scan     		SPC151-04 SPC151-06 SPC152-04 SPC152-06 SPC152-08 SPC152-10 SPC152-12 5PC152-14 SPC152-16 SPC152-18 PDF

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B PDF

    SPC151-04

    Abstract: SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22
    Text: A P I ELECTRONICS INC b lE » • Q G 4 3 5 CI2 □ □ □ □ E cn Ib T ■ AfIC POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS B V c b o B V ceo B V ebo Ic Watts V V V A hFE @ 25°C MIN MÁX Sat Voltages @ Ic A VCE VCE V V V be V Test Conditions Ic l8 I ebo


    OCR Scan     		DD43512 SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 PDF

    LM3661TL-1.25

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. M A X IM U M R A TIN C S le 25“C B V c b o B V c to B V eso V V A V W atts h! @ M IN M AX @ le A V et V Sat Voltages Vet V be V V Test C onditions le A le A Uso ma 1.5 .25 20 SPC151-04 io o i 65 40 25 6 11 1.5 4 1.30 2.5 SPC151-06


    OCR Scan     		SPC151-04 SPC151-06 SPC151-08 SPC151 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22 LM3661TL-1.25 PDF

    SPC151-04

    Abstract: SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC151-20 SPC151-22
    Text: 8 36 5 7 0 0 S O L ID POWER CO RP 95C SOLID POWER CORP 00121 D ~T~33~0/ 03bS7D0 DQ0G1S1 h f ~ TS POWER TRANSISTORS PT TYPE NO. M A XIM UM RATINGS @ 25°C B V cbo B V ceo B V ebo Ic V V V A W atts hFE M IN MAX Sat Voltages @ Ic A VCE VCE V V V V be Test Conditions


    OCR Scan     		SPC151-04 SPC151-06 SPC151-08 SPC151-10 SPC151-12 SPC151-14 SPC151-16 SPC151-18 SPC152-10 SPC152-12 SPC151-20 SPC151-22 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 PDF

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package PDF

    Untitled

    Abstract: No abstract text available
    Text: April 1995 N NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		NDF0610 NDS0610 180mA OT-23) NDF0610 NDS061 PDF

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352 PDF

    BD291

    Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22


    Original     		DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035 PDF

    2sc1030 hitachi

    Abstract: 2SC1445 SANKEN 2SC681A HITACHI 2sd82 sanken 2SC2577 sanken Sanken 2SC1111 2SD82 BD199 2SD180 2Sc2316
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) Of) PD r ICBO Max hFE fT ON) Min (Hz) Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style 175 175 175 175 140 140 140 140 140 140 TO-3 TO-36 TO-36 TO-3 TO-3


    Original     		2SD50 2N1512 2N1514 2SD16 2SA764 2SC1444 2SA770 2SC1985 1200n 2sc1030 hitachi 2SC1445 SANKEN 2SC681A HITACHI 2sd82 sanken 2SC2577 sanken Sanken 2SC1111 2SD82 BD199 2SD180 2Sc2316 PDF

    2N5239

    Abstract: 2N5241 2n5241 jantx 2N5240 to-53
    Text: HIGH VOLTAGE TRANSISTORS PT TYPE NO. 2N5239 2N5240 2N5241 Ic • Va» k m « Vao loo Wax Ic « 2SC M AX SUS V MA V MA wm s ; A 100 5.0 225 100 300 4.0 100 5.0 300 100 375 2.0 125 5.0 325 100 400 2.5 @ hit . È (125*C k V MA MIN MAX 300 375 400 20 20


    OCR Scan     		2N5239 2N5240 2N5241 2N5240 TWX-510-224-6582 ioH151- O-114 2n5241 jantx to-53 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M ÀX sui V MA Watts A 2N3788 1Q9 2N3902 100 2N5157 1ÖÜ V lao MA @ V cex Ic 125°C MA V ?25 100 400 5-9 325 100 400 .25 700* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5 2,0 3.5 15 *Vcex @ 25°C @ Veto


    OCR Scan     		2N3788 2N3902 2N5157 2N3902 2N5157 TWX-510-224-6582 O-114 00435c X-510-224-6582 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ » V ra g g i n ra s i r m « M V V A Watts V tlFE MIN MAX <2 le A V ce V Test Sat Voltages Conditions le Ib Imo* V a V be V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15


    OCR Scan     		2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2132 2N2133 O-114 00435c PDF

    2N2117

    Abstract: 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2118 2N2119
    Text: POWER TRANSISTORS PT TYPE NO. TO-114 MAXIMUM RATINGS @ » V Watts V V V A tlFE MIN MAX <2 lc A V ce V Test Sat Voltages Conditions IEBP* lc Is V a V be V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15 30 10 10 4 15 2.5 10 2 25


    OCR Scan     		O-114 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119 PDF